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US4590505A Expired / Lapsed US ⏱️ 0.0 years remaining

Three dimensional optical receiver having programmable gain sensor stages

Assignee: United States Department of the Air Force
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Filing: 1984-01-10
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Granted: 1986-05-20
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Expires: 2004-01-10
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Abstract

Abstract A three dimensional optical image receiver having sensor stages with a programmable gain capability. Operation of the receiver occurs entirely in the charge domain upon the charge initially generated by the optical signal.

Inventors

  • 👤 Nathan Bluzer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 19:38
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F39/157; H10F39/158

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 233 words
A three dimensional imaging receiver having a plurality of sensor units stacked in a staircase configuration whereby image detection positions of infraposed ones of said sensor units are exposed to form a composite image detection area for said receiver, each of said sensor units comprising: a plurality of radiation detectors, a plurality of programmable gain stages each coupled to one of said plurality of detectors, a buffer memory coupled to each of said programmable gain stages, and multiplexing and readout means coupled to said buffer memory for deriving image data from said receiver; said plurality of radiation detectors each including: a substantially rectangular segment of P-type semiconductor material having a first edge adjacent one of said plurality of programmable gain stages, an N-epitaxial layer formed on the top surface of said rectangular segment, an insulative layer formed on the top surface of said N-epitaxial layer, a resistive sheet disposed on the top surface of said insulative layer, first biasing means positioned along a second edge of said rectangular segment, second biasing means positioned adjacent the corner of said first edge and a third edge of said reactangular segment, and third biasing means positioned adjacent the corner of said first edge and a fourth edge of said rectangular segment, said first, second and third biasing means having potentials applied thereto for selectively altering the shape of the electric field established within said resistive sheet.
Claim 2
Dependent Claim 233 words
A three dimensional imaging receiver having a plurality of sensor units stacked in a staircase configuration whereby image detection positions of infraposed ones of said sensor units are exposed to form a composite image detection area for said receiver, each of said sensor units comprising: a plurality of radiation detectors, a plurality of programmable gain stages each coupled to one of said plurality of detectors, a buffer memory coupled to each of said programmable gain stages, and multiplexing and readout means coupled to said buffer memory for deriving image data from said receiver; said plurality of radiation detectors each including: a substantially rectangular segment of P-type semiconductor material having a first edge adjacent one of said plurality of programmable gain stages, an N-epitaxial layer formed on the top surface of said rectangular segment, an insulative layer formed on the top surface of said N-epitaxial layer, a resistive sheet disposed on the top surface of said insulative layer, first biasing means positioned along a second edge of said rectangular segment, second biasing means positioned adjacent the corner of said first edge and a third edge of said reactangular segment, and third biasing means positioned adjacent the corner of said first edge and a fourth edge of said rectangular segment, said first, second and third biasing means having potentials applied thereto for selectively altering the shape of the electric field established within said resistive sheet.
Claim 3
Dependent Claim 120 words
Apparatus as defined in claim 1 wherein each of said plurality of programmable gain stages comprise: an integration well formed at an edge of said programmable gain stage adjacent said first edge of an associated one of said plurality of radiation detectors, a septum having a portion thereof positioned within the confines of said integration well, said septum being adapted when activated to block further charge flow into said integration well from said associated one of said plurality of radiation detectors and to divide said integration well into first and second charge storage regions, and gating means for transferring charge formed in said first storage region, to said buffer memory and for discarding charge formed in said second storage region.
Claim 4
Dependent Claim 16 words
Apparatus as defined in claim 2 wherein said buffer memory comprises a peristaltic charge storage device.
Claim 5
Dependent Claim 17 words
Apparatus as defined in claim 3 wherein said multiplexing and readout means comprise a charge coupled device.
Claim 6
Dependent Claim 194 words
A sensor for optical radiation comprising: a plurality of radiation detectors, a plurality of programmable gain stages each coupled to one of said plurality of detectors, a buffer memory coupled to each of said programmable gain stages, and multiplexing and readout means coupled to said buffer memory for deriving image data from said sensor; said plurality of radiation detectors each including: a substantially rectangular segment of P-type semiconductor material having a first edge adjacent one of said Plurality of programmable gain stages, an N-epitaxial layer formed on the top surface of said rectangular segment, an insulative layer formed on the top surface of said N-epitaxial layer, a resistive sheet disposed on the top surface of said insulative layer, first biasing means positioned along a second edge of said rectangular segment, second biasing means positioned adjacent the corner of said first edge and a third edge of said rectangular segment, and third biasing means positioned adjacent the corner of said first edge and a fourth edge of said rectangular segment, said first, second and third biasing means having potentials applied thereto for selectively altering the shape of the electric field established within said resistive sheet.
Claim 7
Dependent Claim 194 words
A sensor for optical radiation comprising: a plurality of radiation detectors, a plurality of programmable gain stages each coupled to one of said plurality of detectors, a buffer memory coupled to each of said programmable gain stages, and multiplexing and readout means coupled to said buffer memory for deriving image data from said sensor; said plurality of radiation detectors each including: a substantially rectangular segment of P-type semiconductor material having a first edge adjacent one of said Plurality of programmable gain stages, an N-epitaxial layer formed on the top surface of said rectangular segment, an insulative layer formed on the top surface of said N-epitaxial layer, a resistive sheet disposed on the top surface of said insulative layer, first biasing means positioned along a second edge of said rectangular segment, second biasing means positioned adjacent the corner of said first edge and a third edge of said rectangular segment, and third biasing means positioned adjacent the corner of said first edge and a fourth edge of said rectangular segment, said first, second and third biasing means having potentials applied thereto for selectively altering the shape of the electric field established within said resistive sheet.
Claim 8
Dependent Claim 115 words
Apparatus as defined in claim 5 wherein said plurality of programmable gain stages each include: an integration well formed at an edge thereof adjacent said first edge of an associated one of said plurality of radiation detectors, a septum having a portion thereof positioned within the confines of said integration well, said septum being adapted when activated to block further charge flow into said integration well from said associated one of said plurality of radiation detectors and to divide said integration well into first and second charge storage regions, and gating means for transferring charge formed in said first storage well to said buffer memory and for discarding charge formed in said second storage region.
Claim 9
Dependent Claim 194 words
A sensor for optical radiation comprising: a plurality of radiation detectors, a plurality of programmable gain stages each coupled to one of said plurality of detectors, a buffer memory coupled to each of said programmable gain stages, and multiplexing and readout means coupled to said buffer memory for deriving image data from said sensor; said plurality of radiation detectors each including: a substantially rectangular segment of N-type semiconductor material having a first edge adjacent one of said plurality of programmable gain stages, a P-epitaxial layer formed on the top surface of said rectangular segment, an insulative layer formed on the top surface of said P-epitaxial layer, a resistive sheet disposed on the top surface of said insulative layer, first biasing means positioned along a second edge of said rectangular segment, second biasing means positioned adjacent the corner of said first edge and a third edge of said rectangular segment, and third biasing means positioned adjacent the corner of said first edge and a fourth edge of said rectangular segment, said first, second and third biasing means having potentials applied thereto for selectively altering the shape of the electric field established within said resistive sheet.
Claim 10
Dependent Claim 194 words
A sensor for optical radiation comprising: a plurality of radiation detectors, a plurality of programmable gain stages each coupled to one of said plurality of detectors, a buffer memory coupled to each of said programmable gain stages, and multiplexing and readout means coupled to said buffer memory for deriving image data from said sensor; said plurality of radiation detectors each including: a substantially rectangular segment of N-type semiconductor material having a first edge adjacent one of said plurality of programmable gain stages, a P-epitaxial layer formed on the top surface of said rectangular segment, an insulative layer formed on the top surface of said P-epitaxial layer, a resistive sheet disposed on the top surface of said insulative layer, first biasing means positioned along a second edge of said rectangular segment, second biasing means positioned adjacent the corner of said first edge and a third edge of said rectangular segment, and third biasing means positioned adjacent the corner of said first edge and a fourth edge of said rectangular segment, said first, second and third biasing means having potentials applied thereto for selectively altering the shape of the electric field established within said resistive sheet.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-05-19 1989-11-18 1990-05-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-05-19 1993-11-18 1994-05-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-05-19 1997-11-18 1998-05-20 $7700.00 Window Closed / Lapsed

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