Anti-blooming input structure for charge transfer device

Claim 1

In a charge transfer device for storing and transferring charge packets from the potential well to another along a channel of one conductivity type of semiconductor material that overlays a body of opposite type semiconductor material and having a plurality of gate electrodes adjacent one end of the channel, each defining a potential well, and including a bi-polar injection transistor having a collector region constituting a portion of the transfer channel adjacent one of the potential wells and a base region forming a PN junction with a portion of the channel region constituting the collector, and an emitter region spaced from the channel region and forming a PN junction with the base region, and further including a partitioning transistor having a base common with the injection transistor and a collector disconnected from the collector of the junction transistor, the emitter base junction area associated with a collector of the partitioning transistor being of predetermined size relative to the base emitter junction area associated with the collector of the injection transistor, the improvement of a blooming control electrode means spaced from the emitter region of the injection transistor adjacent one of the gate electrodes, a blooming control drain region of the same conductivity type as the channel region but more heavily doped underlying at least a portion of the blooming control electrode means, means to bias the blooming control electrode means more negative than the adjacent gate electrode and to apply a voltage to the drain region to provide a predetermined potential sufficient to attract carriers, and means to apply an electrical input signal to the emitter regions, whereby the injection transistor injects a predetermined fraction of the input signal to the charge transfer channel and the drain region absorbs any quantity of charge in excess of the capacity of the first potential well adjacent the blooming control electrode means.