Patent US4590149A successfully refreshed from Google Patents.
US4590149A
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Method for fine pattern formation on a photoresist
Assignee: Tokyo Ohka Kogyo Co Ltd
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Filing: 1984-11-19
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Granted: 1986-05-20
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Expires: 2004-11-19
Abstract
Abstract A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200° to 500° C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.
Inventors
- 👤 Hisashi Nakane
- 👤 Akira Yokota
- 👤 Mitsuo Yabuta
- 👤 Minoru Tsuda
- 👤 Wataru Ishii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:02
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/36; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
115 words
A method for finely patterning a photoresist layer on a substrate which comprises the steps of: (a) forming a layer of a negative photoresist composition comprising polymer and aromatic azide compound on a surface of a substrate; (b) irradiating the photoresist layer in a pattern with actinic rays; (c) heating the photoresist layer after said irradiation with actinic rays, in atmosphere kept at a temperature in the range from 200° to 500° C. for a length of time not exceeding 10 minutes; and, after heating, (d) exposing the photoresist layer to an atmosphere of a plasma gas so as to decompose and remove the photoresist composition in the areas not irradiated with the actinic rays.
Claim 2
Independent Claim
115 words
A method for finely patterning a photoresist layer on a substrate which comprises the steps of: (a) forming a layer of a negative photoresist composition comprising polymer and aromatic azide compound on a surface of a substrate; (b) irradiating the photoresist layer in a pattern with actinic rays; (c) heating the photoresist layer after said irradiation with actinic rays, in atmosphere kept at a temperature in the range from 200° to 500° C. for a length of time not exceeding 10 minutes; and, after heating, (d) exposing the photoresist layer to an atmosphere of a plasma gas so as to decompose and remove the photoresist composition in the areas not irradiated with the actinic rays.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-19 | 1997-11-18 | 1998-05-20 | $7700.00 | Window Closed / Lapsed |