Photoresists suitable for forming relief structures of highly heat-resistant polymers

Claim 2

In a photoresist comprising a soluble polyamide-ester prepolymer containing radiation-reactive radicals bonded to the repeating unit of the prepolymer through carboxylic ester linkages; said amide having the structure of the reaction product of a carboxylic aid and an amine, the improvement wherein said photoresist further comprises at least 3% by weight, relative to the weight of said soluble prepolymer, of at least one radiation-reactive polymerizable allyl compound having a boiling point above 180° C., the allyl groups thereof being bonded through an oxygen, sulfur or nitrogen atom.

Claim 3

The photoresist of claim 1, wherein said allyl compound is a derivative of an hydroxylic compound, one or more hydroxyl groups of which are replaced by allyloxy, allylthio, allylsulfinyl or allylsulfonyl groups or a mixture thereof.

Claim 4

The photoresist of claim 2, wherein said hydroxylic compound is a C 2-8 unsubstituted or keto- or phenyl-substituted straight or branched chain aliphatic diol or polyol.

Claim 5

The photoresist of claim 3, wherein said hydroxylic compound is ethylene glycol, 1,2- or 1,3-propylene glycol, glycerol, 1,2-, 1,3-, 1,4 or 2,4-butanediol, 1,2,3- or 1,2,4-butanetriol, erythritol, xylitol, sorbitol, mannitol, dimethylolethane, trimethylolethane, pentaerythritol, phenylethylene glycol, 1-phenyl-2,3-dihydroxypropane, 1-phenyl-1,2-dihydroxypropane, 1- or 2-phenylglycerol, 1-phenylbutane-2,4-diol, dimethylolpropane, trimethylolpropane or a mixture thereof.

Claim 6

The photoresist of claim 2, wherein at least one of said hydroxyl groups is esterified with an acid.

Claim 7

The photoresist of claim 1, wherein said allyl compound is a mono- or polyester or thioester of benzoic acid, phthalic acid, terephthalic acid or pyromellitic acid with allyl alcohol or allylthiol.

Claim 8

The photoresist of claim 1, wherein said allyl compound is a derivative of a saturated or unsaturated five- or six-membered heterocyclic amine, one or more nitrogen atoms of which are substituted with an allyl group.

Claim 9

The photoresist of claim 7, wherein said heterocyclic amine is pyrrole, pyrroline, pyrrolidine, pyrazole, pyrazoline, pyrazolidine, imidazole, imidazoline, imidazolidine, oxazolidine, thiazolidine, triazole, piperidine, 1,4-dihydropyridine, piperazine, triazine or isocyanuric acid.

Claim 10

The photoresist of claim 1, wherein said allyl compound is an N-allyl substituted amide or imide.

Claim 11

The photoresist of claim 1, wherein said allyl compound is allyl phenyl ether, glycerol diallyl ether, erythritol triallyl ether, trimethylolpropane diallyl and triallyl ethers, pentaerythritol diallyl, triallyl and tetraallyl ethers, pentaerythritol triallyl ether benzoate, pentaerythritol triallyl ether monophthalate and diphthalate, pentaerythritol triallyl ether monoterephthalate and diterephthalate, pentaerythritol triallyl ether monopyromellitate, dipyromellitate, tripyromellitate and tetrapyromellitate, diallyl sulfoxide, diallyl sulfone, allyl benzoate, monoallyl and diallyl phthalate, monoallyl, diallyl, triallyl and tetraallyl pyromellitate, allyl phenyl thioether, 2,4,6-trisallyloxy-1,3,5-triazine, 2,4-diallyloxyimidazolidine, N-allylpyrrole, N-allylimidazole, N-allylpiperidine, N,N-diallylpiperazine, N,N,N-triallyltriazine, 2,4,6-tris(allylamino)triazine, triallyl-s-triazine-2,4,6-(1H,3H,5H)-trione, hexaallylmelamine, N,N'-diallylpyromellitic bisimide, N,N'-diallyl benzophenone-3,4,3',4'-tetracarboxylic bisimide, N-allylphthalimide, N-monoallylbenzamide, N,N-diallylbenzamide, N,N-diallylfumaric acid monoamide, N,N-diallylmaleic acid monoamide, N,N,N',N'-tetraallylfumaric acid bisamide, the monoethyl ester of N,N-diallylfumaric acid monoamide or a mixture thereof.

Claim 12

The photoresist of claim 1, wherein said allyl compound has a boiling point above 200° C.

Claim 13

The photoresist of claim 1, wherein the amount of said allyl compound is at least 10% by weight relative to the weight of said soluble prepolymer.

Claim 14

The photoresist of claim 12 wherein said amount is at least 15% by weight.

Claim 15

The photoresist of claim 1, wherein the amount of said allyl compound is between 3 and 30% by weight relative to the weight of said soluble prepolymer.

Claim 16

In a process for forming relief structures of highly heat-resistant polymers, comprising the steps of applying a photoresist comprising a soluble polyamide-ester prepolymer containing radiation-reactive radicals bonded to the repeating unit of the prepolymer through carboxylic ester linkages, said amide having the structure of the reaction product of a carboxylic acid and an amine, said photoresist being applied in the form of a layer or sheet to a substrate, drying the layer or sheet, irradiating the dried, radiation-sensitive layer or sheet through a negative original or using a guided collimated beam, dissolving out or stripping off the non-irradiated portions of the layer or sheet to form a relief structure, the improvement wherein said photoresist further comprises at least 3% by weight, relative to the weight of said soluble prepolymer, of at least one radiation-reactive polymerizable allyl compound having a boiling point above 180° C., the allyl groups thereof being bonded through an oxygen, sulfur or nitrogen atom.

Claim 17

In a process for forming relief structures of highly heat-resistant polymers, comprising the steps of applying a photoresist comprising a soluble polyamide-ester prepolymer containing radiation-reactive radicals bonded to the repeating unit of the prepolymer through carboxylic ester linkages, said amide having the structure of the reaction product of a carboxylic acid and an amine, said photoresist being applied in the form of a layer or sheet to a substrate, drying the layer or sheet, irradiating the dried, radiation-sensitive layer or sheet through a negative original or using a guided collimated beam, dissolving out or stripping off the non-irradiated portions of the layer or sheet to form a relief structure, the improvement wherein said photoresist further comprises at least 3% by weight, relative to the weight of said soluble prepolymer, of at least one radiation-reactive polymerizable allyl compound having a boiling point above 180° C., the allyl groups thereof being bonded through an oxygen, sulfur or nitrogen atom.

Claim 18

The process of claim 15, wherein said allyl compound has a boiling point above 200° C.

Claim 19

The process of claim 15, wherein the amount of said allyl compound is at least 10% by weight relative to the weight of said soluble prepolymer.

Claim 20

The process of claim 15, wherein said allyl compound is allyl phenyl ether, glycerol diallyl ether, erythritol triallyl ether, trimethylolpropane diallyl and triallyl ethers, pentaerythritol diallyl, triallyl and tetraallyl ethers, pentaerythritol triallyl ether benzoate, pentaerythritol triallyl ether monophthalate and diphthalate, pentaerythritol triallyl ether monoterephthalate and diterephthalate, pentaerythritol triallyl ether monopyromellitate, dipyromellitate, tripyromellitate and tetrapyromellitate, diallyl sulfoxide, diallyl sulfone, allyl benzoate, monoallyl and diallyl phthalate, monoallyl, diallyl, triallyl and tetraallyl pyromellitate, allyl phenyl thioether, 2,4,6-trisallyloxy-1,3,5-triazine, 2,4-diallyloxyimidazolidine, N-allylpyrrole, N-allylimidazole, N-allylpiperidine, N,N-diallylpiperazine, N,N,N-triallyltriazine, 2,4,6-tris(allylamino)triazine, triallyl-s-triazine-2,4,6-(1H,3H,5H)-trione, hexaallylmelamine, N,N'-diallylpyromellitic bisimide, N,N'-diallyl benzophenone-3,4,3',4'-tetracarboxylic bisimide, N-allylphthalimide, N-monoallylbenzamide, N,N-diallylbenzamide, N,N-diallylfumaric acid monoamide, N,N-diallylmaleic acid monoamide, N,N,N',N'-tetraallylfumaric acid bisamide, the monoethyl ester of N,N-diallylfumaric acid monoamide or a mixture thereof.

Claim 21

A relief structure formed by the process of claim 15.

Claim 24

The process of claim 15, wherein the resultant relief structure is heat-treated.