US4590149A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fine pattern formation on a photoresist
Assignee: Tokyo Ohka Kogyo Co Ltd
•
Filing: 1984-11-19
•
Granted: 1986-05-20
•
Expires: 2004-11-19
Abstract
Abstract A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200° to 500° C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.
Inventors
- 👤 Hisashi Nakane
- 👤 Akira Yokota
- 👤 Mitsuo Yabuta
- 👤 Minoru Tsuda
- 👤 Wataru Ishii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:16
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/36; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
115 words
A method for finely patterning a photoresist layer on a substrate which comprises the steps of: (a) forming a layer of a negative photoresist composition comprising polymer and aromatic azide compound on a surface of a substrate; (b) irradiating the photoresist layer in a pattern with actinic rays; (c) heating the photoresist layer after said irradiation with actinic rays, in atmosphere kept at a temperature in the range from 200° to 500° C. for a length of time not exceeding 10 minutes; and, after heating, (d) exposing the photoresist layer to an atmosphere of a plasma gas so as to decompose and remove the photoresist composition in the areas not irradiated with the actinic rays.
Claim 2
Independent Claim
115 words
A method for finely patterning a photoresist layer on a substrate which comprises the steps of: (a) forming a layer of a negative photoresist composition comprising polymer and aromatic azide compound on a surface of a substrate; (b) irradiating the photoresist layer in a pattern with actinic rays; (c) heating the photoresist layer after said irradiation with actinic rays, in atmosphere kept at a temperature in the range from 200° to 500° C. for a length of time not exceeding 10 minutes; and, after heating, (d) exposing the photoresist layer to an atmosphere of a plasma gas so as to decompose and remove the photoresist composition in the areas not irradiated with the actinic rays.
References Cited (Backward Citations)
US4015986A
Cited
US4292384A
Cited
US4241165A
Cited
US4307176A
Cited
US4388397A
Cited
US4401745A
Cited
US4465768A
Cited
US4439516A
Cited
US4547455A
Cited
US4540650A
Cited
US4433044A
Cited
US4551409A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-19 | 1997-11-18 | 1998-05-20 | $7700.00 | Window Closed / Lapsed |