US4589190A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of drilled and diffused junction field-effect transistors
Assignee: General Electric Co
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Filing: 1984-03-23
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Granted: 1986-05-20
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Expires: 2004-03-23
Abstract
Abstract A method for fabricating junction field-effect transistors includes forming in an N-type silicon substrate a plurality of high-aspect-ratio bores interposed between a source region and a drain region in the substrate, diffusing P-type impurities a predetermined distance into the substrate from the inner surface to each bore to form a concentric, P-type gate zone around each bore, forming electrical contacts to the source and drain regions and to the gate zones and forming a P-type isolation zone surrounding the source and drain regions and the gate zones. The bores, which are preferably formed by laser drilling, extend completely or partially through the thickness of the substrate. The gate zones extend, either completely through the thickness of the substrate or from the top surface of the substrate to a layer-like P-type zone formed adjacent to the bottom surface thereof. The method provides a junction field-effect transistor structure in which the conducting channel extends through nearly the entire thickness of the substrate and, therefore, results generally in a more compact device.
Inventors
- 👤 Thomas R. Anthony
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:34
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/012; H10D30/80; H10D30/83; H10P; H10P34/00; H10P34/40; H10P34/42; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; Y; Y10; Y10S; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
166 words
A method of fabricating junction field-effect transistor device comprising the steps of: (a) forming a plurality of spaced-apart, high-aspect-ratio substantially mutually parallel bases in and at least partially through a monocrystalline silicon semiconductor body of a first conductivity type by laser drilling, the bores being interposed between a first region and a second region of the body; (b) forming in the body a plurality of spaced apart first zones of a second conductivity type by bringing a first impurity of a second conductivity type into contact with the inner surface of each bore and diffusing the first impurity a predetermined distance into the body from the inner surface such that each of the first zones is substantially concentric with a respective one of the bases and has a generally uniform cross-section; and (c) forming first connection means making electrical contact with each of the first zones and second and third connection means for making electrical contact to the first and second regions of the body, respectively.
Claim 2
Independent Claim
166 words
A method of fabricating junction field-effect transistor device comprising the steps of: (a) forming a plurality of spaced-apart, high-aspect-ratio substantially mutually parallel bases in and at least partially through a monocrystalline silicon semiconductor body of a first conductivity type by laser drilling, the bores being interposed between a first region and a second region of the body; (b) forming in the body a plurality of spaced apart first zones of a second conductivity type by bringing a first impurity of a second conductivity type into contact with the inner surface of each bore and diffusing the first impurity a predetermined distance into the body from the inner surface such that each of the first zones is substantially concentric with a respective one of the bases and has a generally uniform cross-section; and (c) forming first connection means making electrical contact with each of the first zones and second and third connection means for making electrical contact to the first and second regions of the body, respectively.
Claim 3
Dependent Claim
54 words
The method of claim 1 wherein the step of forming the bores includes forming the bores to extend completely through the thickness of the body between two opposing major surfaces thereof, and the step of forming the first zones includes forming the first zones to extend between the two opposing surfaces of the body.
Claim 4
Dependent Claim
36 words
The method of claim 2 wherein the step of forming the bores includes forming the bores to be regularly spaced and disposed generally along a straight line between the first and second regions of the body.
Claim 5
Dependent Claim
69 words
The method of claim 3 wherein the step of forming the first, second and third connection means includes depositing respective metallic layers overlying one of the major surfaces of the body, the metallic layer of the first connection means being in contact with each of the first zones and the metallic layers of the second and third connection means being on contact with the first and second regions, respectively.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein the step of forming the bores includes boring the body with laser beam means.
Claim 7
Dependent Claim
42 words
The method of claim 5 further comprising the step of forming in the body a second zone of the second conductivity type surrounding the first and second regions and the first zones and extending between the two major surfaces of the body.
Claim 8
Dependent Claim
19 words
The method of claim 6 wherein the first conductivity type is N-type and the second conductivity type is P-type.
Claim 9
Dependent Claim
72 words
The method of claim 7 wherein the step for forming the bores includes forming the bores to have a generally circular cross-section with a diameter of approximately 0.001 inch and a bore center-to-bore center spacing between neighboring bores of approximately 0.004 inch, and the step of forming the first zones includes diffusing the first impurities to a distance of approximately 0.001 inch into the body from the inner surface of each bore.
Claim 10
Dependent Claim
35 words
The method of claim 2 wherein the step of forming the bores includes forming the bores to be generally disposed in an array having a plurality of rows and a plurality of regularly spaced columns.
Claim 11
Dependent Claim
69 words
The method of claim 9 wherein the step of forming the first, second and third connection means includes depositing respective metallic layers overlying one of the major surfaces of the body, the metallic layer of the first connection means being in contact with each of the first zones and the metallic layers of the second and third connection means being on contact with the first and second regions, respectively.
Claim 12
Dependent Claim
20 words
The method of claim 10 wherein the step of forming the bores includes boring the body with laser beam means.
Claim 13
Dependent Claim
41 words
The method of claim 1 wherein the step of forming in the body a second zone of the second conductivity type surrounding the first and second regions and the first zones and extending between the two major surfaces of the body.
Claim 14
Dependent Claim
19 words
The method of claim 12 wherein the first conductivity type is N-type and the second conductivity type is P-type.
Claim 15
Dependent Claim
72 words
The method of claim 13 wherein the step for forming the bores includes forming the bores to have a generally circular cross-section with a diameter of approximately 0.001 inch and a bore center-to-bore center spacing between neighboring bores of approximately 0.004 inch, and the step of forming the first zones includes diffusing the first impurities to a distance of approximately 0.001 inch into the body from the inner surface of each bore.
Claim 16
Dependent Claim
33 words
The method of claim 1 wherein the step of forming the bores includes forming the bores into the body from one of the two major surfaces thereof to a substantially uniform predetermined depth.
Claim 17
Dependent Claim
46 words
The method of claim 15 further comprising the step of forming in the body a layer-like third zone of the second conductivity type underlying the other one of the major surfaces of the body and being contiguous with each of the first zones of the body.
Claim 18
Dependent Claim
60 words
The method of claim 15 wherein the step of forming the bores includes forming the bores to extend to within the predetermined first impurity diffusion distance of the other one of the major surfaces of the body, and the step of forming the first zones include forming the first zones to extend between the two major surfaces of the body.
Claim 19
Dependent Claim
36 words
The method of claim 16 wherein the step of forming the bores includes forming the bores to be regularly spaced and disposed generally along a straight line between the first and second regions of the body.
Claim 20
Dependent Claim
69 words
The method of claim 18 wherein the step of forming the first, second and third connection means includes depositing respective metallic layers overlying one of the major surfaces of the body, the metallic layer of the first connection means being in contact with each of the first zones and the metallic layers of the second and third connection means being in contact with the first and second regions, respectively.
Claim 21
Dependent Claim
20 words
The method of claim 19 wherein the step of forming the bores includes boring the body with laser beam means.
Claim 22
Dependent Claim
42 words
The method of claim 20 further comprising the step of forming in the body a second zone of the second conductivity type surrounding the first and second regions and the first zones and extending between the two major surfaces of the body.
Claim 23
Dependent Claim
19 words
The method of claim 21 wherein the first conductivity type is N-type and the second conductivity type is P-type.
Claim 24
Dependent Claim
72 words
The method of claim 22 wherein the step for forming the bores includes forming the bores to have a generally circular cross-section with a diameter of approximately 0.001 inch and a bore center-to-bore center spacing between neighboring bores of approximately 0.004 inch, and the step of forming the first zones including diffusing the first impurities to a distance of approximately 0.001 inch into the body from the inner surface of each bore.
Claim 25
Dependent Claim
34 words
The method of claim 16 wherein the steps of forming the bores includes forming the bores to be disposed in an array having a plurality of rows and a plurality of regularly spaced columns.
Claim 26
Dependent Claim
69 words
The method of claim 24 wherein the step of forming the first, second and third connection means includes depositing respective metallic layers overlying one of the major surfaces of the body, the metallic layer of the first connection means being in contact with each of the first zones and the metallic layers of the second and third connection means being in contact with the first and second regions, respectively.
Claim 27
Dependent Claim
20 words
The method of claim 25 wherein the step of forming the bores includes boring the body with laser beam means.
Claim 28
Dependent Claim
41 words
The method of claim 26 wherein the step of forming in the body a second zone of the second conductivity type surrounding the first and second regions and the first zones and extending between the two major surfaces of the body.
Claim 29
Dependent Claim
19 words
The method of claim 27 wherein the first conductivity type is N-type and the second conductivity type is P-type.
Claim 30
Dependent Claim
72 words
The method of claim 28 wherein the step for forming the bores includes forming the bores to have a generally circular cross-section with a diameter of approximately 0.001 inch and a bore center-to-bore center spacing between neighboring bores of approximately 0.004 inch, and the step of forming the first zones includes diffusing the first impurities to a distance of approximately 0.001 inch into the body from the inner surface of each bore.
References Cited (Backward Citations)
US3007119A
Cited
US3969745A
Cited
US4137100A
Cited
US4327475A
Cited
US4463366A
Cited
US4482907A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
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