Patent US4576652A successfully refreshed from Google Patents.
US4576652A
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Incoherent light annealing of gallium arsenide substrate
Assignee: International Business Machines Corp
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Filing: 1984-07-12
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Granted: 1986-03-18
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Expires: 2004-07-12
Abstract
Abstract Ion implanted gallium arsenide substrates are annealed by providing an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light.
Inventors
- 👤 Harold J. Hovel
- 👤 Thomas F. Kuech
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:17
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P95/904; H10P34/00; H10P34/40; H10P34/42; H10P34/422; Y; Y10; Y10S; Y10S148/00; Y10S148/004; Y10S148/084
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
57 words
A process for annealing an ion implanted gallium arsenide substrate which comprises maintaining said gallium arsenide substrate on all sides above about 400° C. in an arsenic-containing gaseous ambient on all sides of said substrate; heating said gallium arsenide substrate with broad area incoherent light for a time sufficient for annealing said ion implanted gallium arsenide substrate.
Claim 2
Dependent Claim
57 words
A process for annealing an ion implanted gallium arsenide substrate which comprises maintaining said gallium arsenide substrate on all sides above about 400° C. in an arsenic-containing gaseous ambient on all sides of said substrate; heating said gallium arsenide substrate with broad area incoherent light for a time sufficient for annealing said ion implanted gallium arsenide substrate.
Claim 3
Dependent Claim
47 words
The process of claim 1 wherein said substrate contains silicon ions introduced at energies of about 50 to about 200 kiloelectron volts at fluences of about 10 12 to about 10 14 ions per square meter to a depth of about 1000 angstroms to about 4000 angstroms.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said arsenic-containing gaseous ambient is from arsine.
Claim 5
Dependent Claim
26 words
The process of claim 1 wherein the gallium arsenide substrate is heated to a temperature of about 900° C. to about 1100° C. with said light.
Claim 6
Dependent Claim
23 words
The process of claim 1 wherein the intensity of the light is about 20 watts/square centimeter to about 200 watts/square centimeter of substrate.
Claim 7
Dependent Claim
22 words
The process of claim 1 wherein the intensity of said light is about 50 to about 100 watts/square centimeter of said substrate.
Claim 8
Dependent Claim
18 words
The process of claim 1 wherein the time for the annealing is about 1 to about 20 seconds.
Claim 9
Dependent Claim
17 words
The process of claim 1 wherein the time for annealing is about 1 to about 5 seconds.
Claim 10
Dependent Claim
17 words
The process of claim 1 wherein the time for annealing is about 1 to about 2 seconds.
Claim 11
Dependent Claim
43 words
The process of claim 1 wherein the gallium arsenide substrate is heated to a temperature of about 900° C. to about 1100° C. for a time of about 1 to about 20 seconds and wherein said arsenic-containing gaseous ambient is obtained from arsine.
Claim 12
Dependent Claim
17 words
The process of claim 10 wherein the time for annealing is about 1 to about 5 seconds.
Claim 13
Dependent Claim
17 words
The process of claim 10 wherein the time for annealing is about 1 to about 2 seconds.
Claim 14
Dependent Claim
14 words
The process of claim 1 wherein said arsenic-containing gaseous ambient includes an inert gas.
Claim 15
Dependent Claim
16 words
The process of claim 1 wherein said ambient is about 600° C. to about 800° C.
Claim 16
Dependent Claim
36 words
The process of claim 1 wherein said arsenic-containing gaseous ambient downstream of said substrate is at least above about 400° C. and wherein said arsenic-containing gaseous ambient upstream of said substrate is above about 600° C.
Claim 17
Dependent Claim
21 words
The process of claim 1 wherein said arsenic-containing gaseous ambient downstream of said substrate is about 400° C. to 600° C.
Claim 18
Dependent Claim
25 words
The process of claim 1 wherein the temperature of said gallium arsenide substrate is not in excess of about 750° C. prior to the annealing.
Claim 19
Dependent Claim
17 words
The process of claim 13 wherein said inert gas is hydrogen, nitrogen, or argon or mixtures thereof.
Claim 20
Dependent Claim
25 words
The process of claim 16 wherein the temperature of said gallium arsenide substrate is not in excess of about 750° C. prior to the annealing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-03-17 | 1989-09-16 | 1990-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-03-17 | 1993-09-16 | 1994-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-03-17 | 1997-09-16 | 1998-03-18 | $7700.00 | Window Closed / Lapsed |