US4174982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capless annealing compound semiconductors
Assignee: Boeing North American Inc
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Filing: 1977-06-06
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Granted: 1979-11-20
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Expires: 1997-06-06
Abstract
Abstract A method is disclosed for capless annealing compound semiconductors such as ion-implanted GaAs semiconductors. The surface of the semiconductor to be protected during annealing is placed in loose physical contact with an inert material such as powdered graphite. The assembly is placed in a controlled atmosphere and heated to the annealing temperature where it is maintained until annealed. The semiconductor is cooled and then removed from the controlled atmosphere and inert material. In one embodiment, a volatile one of the elements in the compound is introduced into the inert material.
Inventors
- 👤 Anthony A. Immorlica, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:29
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; C; C22; C22F; C22F1/00; C22F1/02; H10P30/202; H10P30/206; H10P30/28; H10P95/00; H10P95/90; H10P95/904; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
70 words
A method of annealing a compound semiconductor comprising: placing an inert solid material in loose physical contact with a surface of the semiconductor to be protected; placing said inert material and semiconductor in a controlled atmosphere; heating said semiconductor to an annealing temperature; maintaining said semiconductor at said annealing temperature to anneal said semiconductor; cooling said semiconductor; and removing said semiconductor from said controlled atmosphere and from said inert material.
Claim 2
Independent Claim
70 words
A method of annealing a compound semiconductor comprising: placing an inert solid material in loose physical contact with a surface of the semiconductor to be protected; placing said inert material and semiconductor in a controlled atmosphere; heating said semiconductor to an annealing temperature; maintaining said semiconductor at said annealing temperature to anneal said semiconductor; cooling said semiconductor; and removing said semiconductor from said controlled atmosphere and from said inert material.
Claim 3
Dependent Claim
14 words
The method as claimed in claim 1, wherein said inert material comprises powdered graphite.
Claim 4
Dependent Claim
15 words
The method as claimed in claim 1, wherein said controlled atmosphere comprises a reducing gas.
Claim 5
Dependent Claim
15 words
The method as claimed in claim 1, wherein said controlled atmosphere comprises an inert gas.
Claim 6
Dependent Claim
13 words
The method as claimed in claim 1, wherein said controlled atmosphere comprises hydrogen.
Claim 7
Dependent Claim
62 words
The method as claimed in claim 1, wherein said step of placing said inert material and semiconductor in a controlled atmosphere, comprises: evacuating the atmosphere from around said inert material; backing said inert material to drive out O 2 and H 2 O; backfilling controlled atmosphere around said inert material; and maintaining a flow of said controlled atmosphere around said inert material.
Claim 8
Dependent Claim
34 words
The method as claimed in claim 1, wherein said inert material is selected from the group consisting of C, SiO 2 , Si 3 N 4 , AlN, and Al 2 O 3 .
Claim 9
Dependent Claim
18 words
The method as claimed in claim 4, wherein said inert material is in the form of a powder.
Claim 10
Dependent Claim
27 words
The method as claimed in claim 1, including the step of placing additional semiconductor material of the type being annealed in the proximity of said inert matrial.
Claim 11
Independent Claim
99 words
A method of annealing a semiconductor, comprising: placing crushed GaAs and powdered graphite in a container; placing the semiconductor in said container so that a surface of the semiconductor is in loose physical contact with said powdered graphite; placing the semiconductor, said crushed GaAs, and said powdered graphite in an atmosphere of flowing hydrogen; heating the semiconductor to an annealing temperature in the range of 600° to 900° C.; maintaining the semiconductor at said annealing temperature to anneal the semiconductor; cooling the semiconductor; and removing the semiconductor from said hydrogen atmosphere and from said container and said powdered graphite.
Claim 12
Independent Claim
99 words
A method of annealing a semiconductor, comprising: placing crushed GaAs and powdered graphite in a container; placing the semiconductor in said container so that a surface of the semiconductor is in loose physical contact with said powdered graphite; placing the semiconductor, said crushed GaAs, and said powdered graphite in an atmosphere of flowing hydrogen; heating the semiconductor to an annealing temperature in the range of 600° to 900° C.; maintaining the semiconductor at said annealing temperature to anneal the semiconductor; cooling the semiconductor; and removing the semiconductor from said hydrogen atmosphere and from said container and said powdered graphite.
References Cited (Backward Citations)
US4002505A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-19 | 1983-05-21 | 1983-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-19 | 1987-05-21 | 1987-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-19 | 1991-05-21 | 1991-11-20 | $7700.00 | Window Closed / Lapsed |