Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations

Claim 2

A semiconductor device comprising: a substrate of a first conductivity type; a first insulating layer formed over a predetermined portion of said substrate; a first single crystal semiconductor film formed to cover said first insulating film to cover portions of said substrate which are uncovered by said first insulating film and which are adjacent to an area of said substrate covered by said first insulating film; first, second and third impurity doped regions formed within said substrate, said first, second and third impurity doped regions being of a second conductivity type opposite to that of said substrate and being separated from one another in said substrate, said second impurity region being completely covered by said first insulating film and said first and third regions being partially covered by said first insulating film and partially covered by said first single crystal semiconductor film; fourth, fifth and sixty impurity doped regions formed within said first single crystal semiconductor film, said fourth, fifth and sixth regions having said second conductivity type and being spaced apart from one another in said first semiconductor film, wherein said fourth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said first region in said substrate, wherein said fifth region is formed to overlay said first insulating film to extend over a portion of said substrate located between said first and second semiconductor regions, and wherein said sixth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said third region of said substrate; a second insulating film formed over said first semiconductor film to cover a portion of said first semiconductor film between said foruth and fifth semiconductor regions; a third insulating film formed over said first semiconductor film to cover a portion of said first semiconductor film between said fifth and sixth semiconductor regions; a first conductor formed over said second insulating film; and a second conductor formed over said third insulating film.

Claim 3

A semiconductor device formed to include at least four field effect transistors coupled to operate as a two-stage inverter, said semiconductor device comprising: a substrate of a first conductivity type; a first insulating layer formed over a predetermined portion of said substrate; a first single crystal semiconductor film formed to cover said first insulating film to cover portions of said substrate which are uncovered by said first insulating film and which are adjacent to an area of said substrate covered by said first insulating film; first, second and third impurity doped regions formed within said substrate, said first, second and third impurity doped regions being of a second conductivity type opposite to that of said substrate and being separated from one another in said substrate, said second impurity region being completely covered by said first insulating film and said first and third regions being partially covered by said first insulating film and partially covered by said first single crystal semiconductor film; fourth, fifth and sixth impurity doped regions formed within said first single crystal semiconductor film, said fourth, fifth and sixth regions having said second conductivity type and being spaced apart from one another in said first semiconductor film, wherein said fourth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said first region in said substrate, wherein said fifth region is formed to overlay said first insulating film to extend over a portion of said substrate located between said first and second semiconductor regions, and wherein said sixth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said third region of said substrate; a second insulating film formed over said first semiconductor film to cover a portion of said first semiconductor film between said fourth and fifth semiconductor regions; a third insulating film formed over said first semiconductor film to cover a portion of said first semiconductor film between said fifth and sixth semiconductor regions; a first conductor formed over said second insulating film; and a second conductor formed over said third insulating film, wherein a first transistor is formed by said second conductor as a gate electrode, said fifth region as a source and said sixth region as a drain, wherein a second transistor is formed by said first conductor as a gate electrode, said fourth region as a source and said fifth region as a drain, wherein a third transistor is formed by said sixth region as a gate, said second region as a source and said third region as a drain, wherein a fourth transistor is formed by said fifth region as a gate, said first region as a source and said second region as a drain, and wherein said first conductor operates as an input of said inverter, said second conductor operates as a first power source terminal of said inverter, said first and fourth regions are coupled together to operate as a second power source terminal of said inverter, and said second region operates as an output of said inverter.

Claim 4

A semiconductor device formed to include at least four field effect transistors coupled to operate as a two-stage inverter, said semiconductor device comprising: a substrate of a first conductivity type; a first insulating layer formed over a predetermined portion of said substrate; a first single crystal semiconductor film formed to cover said first insulating film to cover portions of said substrate which are uncovered by said first insulating film and which are adjacent to an area of said substrate covered by said first insulating film; first, second and third impurity doped regions formed within said substrate, said first, second and third impurity doped regions being of a second conductivity type opposite to that of said substrate and being separated from one another in said substrate, said second impurity region being completely covered by said first insulating film and said first and third regions being partially covered by said first insulating film and partially covered by said first single crystal semiconductor film; fourth, fifth and sixth impurity doped regions formed within said first single crystal semiconductor film, said fourth, fifth and sixth regions having said second conductivity type and being spaced apart from one another in said first semiconductor film, wherein said fourth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said first region in said substrate, wherein said fifth region is formed to overlay said first insulating film to extend over a portion of said substrate located between said first and second semiconductor regions, and wherein said sixth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said third region of said substrate; a second insulating film formed over said first semiconductor film to cover a portion of said first semiconductor film between said fourth and fifth semiconductor regions; a third insulating film formed over said first semiconductor film to cover a portion of said first semiconductor film between said fifth and sixth semiconductor regions; a first conductor formed over said second insulating film; and a second conductor formed over said third insulating film, wherein a first transistor is formed by said second conductor as a gate electrode, said fifth region as a source and said sixth region as a drain, wherein a second transistor is formed by said first conductor as a gate electrode, said fourth region as a source and said fifth region as a drain, wherein a third transistor is formed by said sixth region as a gate, said second region as a source and said third region as a drain, wherein a fourth transistor is formed by said fifth region as a gate, said first region as a source and said second region as a drain, and wherein said first conductor operates as an input of said inverter, said second conductor operates as a first power source terminal of said inverter, said first and fourth regions are coupled together to operate as a second power source terminal of said inverter, and said second region operates as an output of said inverter.

Claim 5

A semiconductor device comprising: a substrate of a first conductivity type; a first insulating layer formed over a predetermined portion of said substrate; a first single crystal semiconductor film formed to cover said first insulating film to cover portions of said substrate which are uncovered by said first insulating film and which are adjacent to an area of said substrate covered by said first insulating film; first, second and third impurity doped regions formed within said substrate, said first, second and third impurity doped regions being of a second conductivity type opposite to that of said substrate and being separated from one another in said substrate, said second impurity region being completely covered by said first insulating film and said first and third regions being partially covered by said first insulating film and partially covered by said first single crystal semiconductor film; fourth, fifth and sixth impurity doped regions formed within said first single crystal semiconductor film, said fourth, fifth and sixth regions having said second conductivity type and being spaced apart from one another in said first semiconductor film, wherein said fourth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said first region in said substrate, wherein said fifth region is formed to overlay said first insulating film to extend over a portion of said substrate located between said first and second semiconductor regions, and wherein said sixth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said third region of said substrate; a second insulating film formed over a predetermined portion of said first semiconductor film; a second single crystal semiconductor film formed to cover said second insulating film and to cover portions of said first semiconductor film which are uncovered by said insulating film, and which are adjacent to an area of said first semiconductor film covered by said second insulating film; seventh, eighth and ninth impurity doped regions formed within said second seiconductor film, said seventh, eighth and ninth regions having said second conductity type and being spaced apart from one another in said second semiconductor film, wherein said seventh semiconductor region is formed to have a first portion which overlaps a portion of said second insulating film and to have a second portion which lies in contact with said fourth region in said first semiconductor film, wherein said eighth region is formed to overlay said second insulating film to extend over a portion of said first semiconductor film located between said fourth and fifth semiconductor regions, and wherein said ninth region is formed to have a first portion which overlaps a portion of said second insulating film and to have a second portion which lies in contact with said sixth region of said first semiconductor film; a third insulating film formed over said second semiconductor film to cover a portion of said second semiconductor film between said seventh and eighth semiconductor regions; a fourth insulating film formed over said second semiconductor film to cover a portion of said second semiconductor film between said eighth and ninth semiconductor regions; a first conductor formed over said third insulating film; and a second conductor formed over said fourth insulating film.

Claim 6

A semiconductor device comprising: a substrate of a first conductivity type; a first insulating layer formed over a predetermined portion of said substrate; a first single crystal semiconductor film formed to cover said first insulating film to cover portions of said substrate which are uncovered by said first insulating film and which are adjacent to an area of said substrate covered by said first insulating film; first, second and third impurity doped regions formed within said substrate, said first, second and third impurity doped regions being of a second conductivity type opposite to that of said substrate and being separated from one another in said substrate, said second impurity region being completely covered by said first insulating film and said first and third regions being partially covered by said first insulating film and partially covered by said first single crystal semiconductor film; fourth, fifth and sixth impurity doped regions formed within said first single crystal semiconductor film, said fourth, fifth and sixth regions having said second conductivity type and being spaced apart from one another in said first semiconductor film, wherein said fourth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said first region in said substrate, wherein said fifth region is formed to overlay said first insulating film to extend over a portion of said substrate located between said first and second semiconductor regions, and wherein said sixth region is formed to have a first portion which overlaps a portion of said first insulating film and to have a second portion which lies in contact with said third region of said substrate; a second insulating film formed over a predetermined portion of said first semiconductor film; a second single crystal semiconductor film formed to cover said second insulating film and to cover portions of said first semiconductor film which are uncovered by said insulating film, and which are adjacent to an area of said first semiconductor film covered by said second insulating film; seventh, eighth and ninth impurity doped regions formed within said second seiconductor film, said seventh, eighth and ninth regions having said second conductity type and being spaced apart from one another in said second semiconductor film, wherein said seventh semiconductor region is formed to have a first portion which overlaps a portion of said second insulating film and to have a second portion which lies in contact with said fourth region in said first semiconductor film, wherein said eighth region is formed to overlay said second insulating film to extend over a portion of said first semiconductor film located between said fourth and fifth semiconductor regions, and wherein said ninth region is formed to have a first portion which overlaps a portion of said second insulating film and to have a second portion which lies in contact with said sixth region of said first semiconductor film; a third insulating film formed over said second semiconductor film to cover a portion of said second semiconductor film between said seventh and eighth semiconductor regions; a fourth insulating film formed over said second semiconductor film to cover a portion of said second semiconductor film between said eighth and ninth semiconductor regions; a first conductor formed over said third insulating film; and a second conductor formed over said fourth insulating film.