Electron beam enhanced surface modification for making highly resolved structures

Claim 3

The method of claim 1, wherein said substrate surface comprises a metal capable of forming a compound of a first predetermined color under the energy of an electron beam with said reactant fragment, doped with a metal species at designated locations capable of imparting a second predetermined color to the compound of the substrate material and the reactant fragment, further comprising scanning the substrate surface with a plurality of at least two light beams of different colors; and detecting the reflectances of the light beams at said defined location on the substrate surface for the frequencies of the light beams employed.

Claim 4

The method of claim 1, wherein said substrate surface comprises semiconductor material and said gas phase consists essentially of a gas having a dopant as a reactant fragment, said dopant being capable of combining with the semiconductor material to form an active device region.

Claim 5

The method of claim 3, further comprising, at least during the application of the electron beam to the substrate, cooling the mean temperature of the substrate surface to reduce thermal diffusion of the dopant into the substrate material outside the defined area of beam impingement.

Claim 6

The method of claim 3, wherein said first electron beam is of a beam energy adapted to cause dissociation of said gas phase material, and further comprising: simultaneously with application of said first beam, applying a second electron beam of a second beam energy to said defined location, the second beam energy being adapted to cause diffusion of the dopant into the substrate material at said defined location.

Claim 7

The method of claim 1, further comprising: after applying the electron beam, etching the substrate surface by a selective means for removing unreacted substrate material preferentially to the removal of reacted substrate material.

Claim 8

The method of claim 1, wherein said substrate surface comprises a metallic element capable of forming a compound having a standard heat of formation and a standard free energy of formation with absolute value greater than 80 (kcal./mole) metal atom; and the gas phase reactant comprises a molecule containing oxygen as a reactant fragment.

Claim 9

The method of claim 7, wherein said gas phase is chosen from the group consisting of: carbon dioxide nitrous oxide nitrogen dioxide water vapor and oxygen.

Claim 10

The method of claim 7, wherein said substrate material is chosen from the group consisting of: aluminum, antimony, barium, beryllium, boron, calcium, chromium, iron, magnesium, manganese, molybdenum, silicon, strontium, tantalum, tin, titanium, tungsten, uranium, vanadium, zinc, and zirconium.

Claim 11

The method of claim 9, wherein said substrate material comprises an alloy of an element listed in claim 9.

Claim 12

The method of claim 1, wherein the submicron structures are defined at selected ones of a plurality of predetermined locations on a substrate surface defining a mass storage device, and further comprising: scanning said plurality of predetermined locations with an electron beam under vacuum; and detecting the presence of said structures at the selected locations by an electron beam analysis technique.

Claim 15

The method of claim 12, wherein said substrate surface is comprised of a first material and is carried on a substrate stack having an underlying body of second material that is capable of being doped to form a semiconductor device, further comprising: (a) exposing a portion of the second material by continuing said selective etching step sufficiently to remove an uncoated portion of the first material; (b) doping said exposed portion of the second material to form a semiconductor device region; and (c) exposing a further portion of the second material by application of an etching means for removing the substrate coating and first material preferentially to removal of the second material from the substrate stack.

Claim 16

The method of claim 13, further comprising, after etching to remove the substrate coating and first material: (a) metalizing the exposed surface of said second material; (b) defining an interconnect line location from the semiconductor device region by writing a beam exposure pattern directly on said metalized surface under a partial pressure of a selected gas phase material capable of dissociating under electron beam exposure to oxygen and a stable gaseous leaving group; (c) continuing beam exposure for a time sufficient and a dose sufficient to form a bound oxide surface compound structure of the metal and oxygen; and (d) defining the interconnect line from the semiconductor device region by etching the metalized surface by a selective means for removing the unoxidized metal coating preferentially to the removal of the oxidized metal and the underlying semiconductor device region in the substrate stack.

Claim 17

The method of claim 13, wherein said second material consists essentially of doped silicon.

Claim 18

The method of claim 14, wherein said metalized surface consists essentially of aluminum.

Claim 19

The method of claim 12, wherein said gas phase is chosen from the group consisting of: carbon dioxide nitrous oxide nitrogen dioxide water vapor and oxygen.

Claim 20

The method of claim 12, wherein said substrate material is chosen from the group consisting of: aluminum, antimony, barium, beryllium, boron, calcium, chromium, iron, magnesium, manganese, molybdenum, silicon, strontium, tantalum, tin, titanium, tungsten, uranium, vanadium, zinc, and zirconium.

Claim 21

The method of claim 18, wherein said substrate material comprises an alloy of an element of the group of claim 18.

Claim 24

The method of claim 19, wherein said gas phase material is of the type capable of thermally diffusing its dopant into the silicon substrate, further comprising cooling the substrate at least during electron beam exposure to reduce thermal diffusion of the gas phase dopant outside the beam exposure area.

Claim 25

The method of claim 20, further comprising simultaneously with application of said first beam, applying a second electron beam of submicron width and of a second beam energy to substantially the same selected location, wherein the first beam energy is adapted to cause dissociation of the gas phase material into at least the dopant, and the second beam energy is adapted to cause diffusion of the dopant into the silicon crystal lattice.

Claim 26

The method of claim 20, further comprising after defining said semiconductor device region: (a) vacuum depositing a metal film over the substrate surface, wherein the metal is capable of forming a stable oxide surface structure; (b) locating said metalized substrate surface in a partial pressure of a gas phase material comprising a gas capable of dissociating under the energy of an electron beam into a stable gaseous leaving group and oxygen; (c) applying an electron beam of submicron width to the metalized surface in a pattern defining an interconnect line from said semiconductor device area; (d) continuing application of the electron beam in said pattern for a time sufficient and in a dose sufficient to cause accumulation of oxygen at the interface of the beam and the metalized surface and to induce formation of a stable oxide surface compound structure in the beam pattern; and (e) defining a residual intrconnect line of said metal film from the semiconductor device region by etching the metalized surface with a selective means for removing uncoated portions of the metal in preference to the coated portions of the metal.

Claim 27

The method of claim 23, further comprising, after definition of the semiconductor device region and interconnect line on the substrate surface, vacuum depositing an epitaxial film over the substrate surface.

Claim 28

The method of claim 24, further comprising depositing a silicon layer on said epitaxial film.