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US4561702A Expired / Lapsed US ⏱️ 0.0 years remaining

CMOS Address buffer circuit

Assignee: Texas Instruments Inc
•
Filing: 1984-05-09
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Granted: 1985-12-31
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Expires: 2004-05-09
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Abstract

Abstract A CMOS bistable circuit is employed as an address buffer or latch for a semiconductor memory or the like. The circuit includes a pair of differential gated inputs, one from an address terminal, and the other from a reference voltage. The same clock used to gate the inputs also preconditions the circuit to be in a balanced status, and holds off conduction of any transistor in the circuit. In this manner, a circuit of high speed, low power, and minimum complexity is provided.

Inventors

  • 👤 Hugh P. McAdams

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 12:36
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/353; H03K3/356; H03K3/356104; H03K3/356113; G; G11; G11C; G11C8/00; G11C8/06; H03K3/356017

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 212 words
An address buffer circuit for a semiconductor memory device or the like, comprising: a double cross-coupled CMOS bistable flip-flop circuit having a pair of N-channel driver transistors and a pair of P-channel load transistors, each N-channel transistor having a source-drain path in series with the source-drain path of the corresponding P-channel transistor, the drains of the N-channel transistors providing output nodes, with the gates of the N- and P-channel transistors on each side respectively coupled to the drain of the N-channel driver transistor of the other, a pair of P-channel input transistors, each having a souce-drain path in series between the source-drain path of one of said P-channel load transistors and a supply node, first and second N-channel gating transistors, the first gating transistor having a source-drain path connected between the gate of one of said pair of input transistors and an input node, the second transistor having a source-drain path connected between the gate of the other of said pair of input transistors and a reference voltage, a P-channel supply transistor having a source-drain path connected between said supply node and a voltage supply, and a single activating clock voltage connected in common to the gates of said first and second gating transistors and to the gate of said supply transistor.
Claim 2
Dependent Claim 212 words
An address buffer circuit for a semiconductor memory device or the like, comprising: a double cross-coupled CMOS bistable flip-flop circuit having a pair of N-channel driver transistors and a pair of P-channel load transistors, each N-channel transistor having a source-drain path in series with the source-drain path of the corresponding P-channel transistor, the drains of the N-channel transistors providing output nodes, with the gates of the N- and P-channel transistors on each side respectively coupled to the drain of the N-channel driver transistor of the other, a pair of P-channel input transistors, each having a souce-drain path in series between the source-drain path of one of said P-channel load transistors and a supply node, first and second N-channel gating transistors, the first gating transistor having a source-drain path connected between the gate of one of said pair of input transistors and an input node, the second transistor having a source-drain path connected between the gate of the other of said pair of input transistors and a reference voltage, a P-channel supply transistor having a source-drain path connected between said supply node and a voltage supply, and a single activating clock voltage connected in common to the gates of said first and second gating transistors and to the gate of said supply transistor.
Claim 3
Dependent Claim 47 words
A circuit according to claim 1 including first and second N-channel shunt transistors, each having a source-drain path connected in parallel with the source-drain path of a respective one of said N-channel driver transistors, and each shunt transistor having a gate connected to said activating clock voltage.
Claim 4
Dependent Claim 47 words
A circuit according to claim 2 including first and second CMOS inverters, each having an input connected to the output node at the drain of a respective one of said driver transistors, and each said inverter having an output to produce an address or address-complement voltage respectively.
Claim 5
Dependent Claim 28 words
A circuit according to claim 3 wherein said address and address-complement voltage are precharged high by P-channel transistors in said CMOS inverters when said shunt transistors are conductive.
Claim 6
Dependent Claim 24 words
A circuit according to claim 4 wherein said activating clock voltage is high during an inactive cycle and is low during an active cycle.
Claim 7
Dependent Claim 76 words
A circuit according to claim 5 including first and second P-channel shunt transistors, each having a source-drain path connected in parallel with the source-drain path of a respective one of said pair of P-channel input transistors, and means applying a clock voltage to gates of said P-channel shunt transistors in said active cycle at a time delayed from said activating clock voltage going low, to thereby provide resupply of said flip-flop during very long active cycles.
Claim 8
Dependent Claim 24 words
A circuit according to claim 1 wherein said activating clock voltage is high during an inactive cycle and is low during an active cycle.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-12-30 1989-07-01 1989-12-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-12-30 1993-07-01 1993-12-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-12-30 1997-07-01 1997-12-31 $7700.00 Window Closed / Lapsed

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