Patent CH29319A successfully refreshed from Google Patents.
Patent US4561009A successfully refreshed from Google Patents.
US4561009A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1983-11-22
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Granted: 1985-12-24
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Expires: 2003-11-22
Abstract
Abstract A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.
Inventors
- 👤 Toshio Yonezawa
- 👤 Masaharu Aoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6324; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/66; H10P14/665; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6929; H10P14/6936; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69397; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10W20/45; H10W20/48; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
59 words
A semiconductor device comprising a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of said substrate; and means for blocking water and Na, said means comprising an alumina layer covering said metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y.
Claim 2
Dependent Claim
59 words
A semiconductor device comprising a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of said substrate; and means for blocking water and Na, said means comprising an alumina layer covering said metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y.
Claim 3
Dependent Claim
90 words
A seminconductor device comprising a semiconductor substrate; an insulating layer formed on the surface of said substrate and having an opening; a metal wiring layer connected through said opening to said semiconductor substrate and comprising an Al alloy; means for blocking water and Na, said means comprising an alumina layer formed on the surface of said metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y; and an opening formed in said alumina layer for connecting an electrode.
Claim 4
Dependent Claim
90 words
A seminconductor device comprising a semiconductor substrate; an insulating layer formed on the surface of said substrate and having an opening; a metal wiring layer connected through said opening to said semiconductor substrate and comprising an Al alloy; means for blocking water and Na, said means comprising an alumina layer formed on the surface of said metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y; and an opening formed in said alumina layer for connecting an electrode.
Claim 5
Dependent Claim
24 words
A semiconductor device as claimed in claim 1 or 2 wherein said Al alloy is Al-Cu, Al-Cu-Si, Al-Mg, Al-Ni, Al-Cr, Al-Mn, Al-Ti, or Al-Y.
Claim 6
Dependent Claim
19 words
A semiconductor device as claimed in claim 2 wherein said alumina layer is continuously formed on said insulating layer.
Claim 7
Dependent Claim
25 words
A semiconductor device as claimed in claim 2 wherein said semiconductor substrate is made of silicon and said insulating layer is made of silicon dioxide.
Claim 8
Dependent Claim
26 words
A semiconductor device as claimed in claim 2 wherein an organic insulating layer is formed on the surface of said semiconductor substrate having said alumina layer.
Claim 9
Dependent Claim
17 words
A semiconductor device as claimed in claim 1 or 2 wherein said semiconductor device comprises a transistor.
Claim 10
Dependent Claim
17 words
A semiconductor device as claimed in claim 1 or 2 wherein said semiconductor device comprises a diode.
Claim 11
Dependent Claim
19 words
A semiconductor device as claimed in claim 1 or 2 wherein said semiconductor device comprises an integrated circuit device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-23 | 1989-06-24 | 1989-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-23 | 1993-06-24 | 1993-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-23 | 1997-06-24 | 1997-12-24 | $7700.00 | Window Closed / Lapsed |