Patent US4557995A successfully refreshed from Google Patents.
US4557995A
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Method of making submicron circuit structures
Assignee: International Business Machines Corp
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Filing: 1981-10-16
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Granted: 1985-12-10
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Expires: 2001-10-16
Abstract
Abstract Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving re-establishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.
Inventors
- 👤 Alec N. Broers
- 👤 Robert B. Laibowitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:31
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/004; G03F7/09; G03F7/095; G03F7/0957; G03F7/20; G03F7/2022; H; H05; H05K; H05K3/00; H05K3/0073; H05K3/0082; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2045; H05K2201/00; H05K2201/01; H05K2201/0104; H05K2201/0108; H05K2203/00; H05K2203/15; H05K2203/1572; H05K3/02; H05K3/04; H05K3/046; H05K3/048; H05K3/06; H05K3/061; H05K3/064
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
93 words
In a method of forming a microcircuit structure, the steps comprising: defining a desired first microcircuit pattern on one side of a thin film substrate with patterned radiation incident upon said one side, and defining a desired second microcircuit pattern on the opposite side of said thin film substrate with patterned radiation incident also upon said one side but which passes through said thin film substrate to define said second microcircuit pattern on said opposite side, said microcircuit patterns both being defined while said thin film substrate is continuously in one alignment position.
Claim 2
Dependent Claim
93 words
In a method of forming a microcircuit structure, the steps comprising: defining a desired first microcircuit pattern on one side of a thin film substrate with patterned radiation incident upon said one side, and defining a desired second microcircuit pattern on the opposite side of said thin film substrate with patterned radiation incident also upon said one side but which passes through said thin film substrate to define said second microcircuit pattern on said opposite side, said microcircuit patterns both being defined while said thin film substrate is continuously in one alignment position.
Claim 3
Dependent Claim
33 words
The method defined in claim 1 wherein said patterned radiation defining said first microcircuit pattern and said radiation defining said patterned second microcircuit pattern are simultaneously incident upon said thin film one side.
Claim 4
Dependent Claim
29 words
The method defined in claim 1 wherein said patterned radiation defining said first microcircuit pattern and said patterned radiation defining said second microcircuit pattern comprise the same patterned radiation.
Claim 5
Dependent Claim
29 words
The method in claim 1 wherein said patterned radiation defining said first microcircuit pattern and said patterned radiation defining said second microcircuit pattern consist of the same patterned radiation.
Claim 6
Dependent Claim
16 words
The method defined in claim 1 wherein said first and second microcircuit patterns are substantially identical.
Claim 7
Dependent Claim
16 words
The method defined in claim 1 wherein said first and second microcircuit patterns are substantially complementary.
Claim 8
Dependent Claim
48 words
The method defined in claim 1 wherein said patterned radiation defining said desired first microcircuit pattern forms a first radiation pattern and wherein said patterned radiation defining said desired second microcircuit pattern forms a second radiation pattern said first and second radiation patterns not necessarily being different patterns.
Claim 9
Dependent Claim
26 words
The method defined in claim 7 wherein said first and second radiation patterns are substantially identical and said first and second microcircuit patterns are substantially identical.
Claim 10
Dependent Claim
26 words
The method defined in claim 7 wherein said first and second radiation patterns are substantially identical and said first and second microcircuit patterns are substantially complementary.
Claim 11
Dependent Claim
36 words
The method defined in claim 7 wherein a first resist layer is deposited on said one side of said thin film and a second resist layer is deposited on said opposite side of said thin film.
Claim 12
Dependent Claim
48 words
The method defined in claim 10 wherein said first resist layer is patterned by the radiation of said first radiation pattern to define said first microcircuit pattern and said second resist layer is patterned by the radiation of said second radiation pattern to define said second microcircuit pattern.
Claim 13
Dependent Claim
21 words
The method defined in claim 11 wherein said first and second radiation patterns are synonomous and consist of the same radiation.
Claim 14
Dependent Claim
36 words
The method defined in claim 11 wherein said radiation of said first radiation pattern does not pattern said second resist layer and said radiation of said second radiation pattern does not pattern said first resist layer.
Claim 15
Dependent Claim
29 words
The method defined in claim 13 wherein the patterned radiation defining said first microcircuit pattern and the patterned radiation defining said second microcircuit pattern have a different energy characteristic.
Claim 16
Dependent Claim
25 words
The method defined in claim 14 wherein said different energy characteristic is obtained by interposing a filter between a radiation source and said thin film.
Claim 17
Dependent Claim
32 words
The method defined in claim 14 wherein said different energy characteristic is obtained by controlling a radiation source so as to cause said source to emit radiation having a different energy characteristic.
Claim 18
Dependent Claim
34 words
The method defined in claim 11 wherein either said first or second resist layer is a positive acting resist while the other of said first or second resist layers is a negative acting resist.
Claim 19
Dependent Claim
26 words
The method defined in claim 7 wherein at least one of said first or second radiation patterns is forming through use of a pattern forming mask.
Claim 20
Dependent Claim
27 words
The method defined in claim 7 wherein at least one of said first or second radiation patterns is formed by writing with a fine beam of radiation.
Claim 21
Dependent Claim
18 words
The method defined in claim 7 wherein at least one of said radiation patterns comprises electron beam radiation.
Claim 22
Dependent Claim
18 words
The method defined in claim 7 wherein at least one of said radiation patterns comprises ion beam radiation.
Claim 23
Dependent Claim
18 words
The method defined in claim 7 wherein at least one of said radiation patterns comprises light beam radiation.
Claim 24
Dependent Claim
16 words
The method defined in claim 22 wherein said light beam radiation comprises ultra violet light radiation.
Claim 25
Dependent Claim
14 words
The method defined in claim 22 wherein said light beam radiation comprises x-ray radiation.
Claim 26
Dependent Claim
30 words
The method defined in claim 7 wherein one of said microcircuit patterns comprises contamination resist, the radiation pattern defining said one microcircuit pattern being a pattern of electron beam radiation.
Claim 27
Dependent Claim
30 words
The method defined in claim 7 wherein said first and second microcircuit patterns both comprise contamination resist, said first and second radiation patterns both being patterns of electron beam radiation.
Claim 28
Dependent Claim
46 words
The method defined in claim 26 wherein said first microcircuit pattern is formed by establishing a suitable atmosphere for deposition of contamination resist on said one side of said thin film during irradiation of said one side with said first radiation pattern of electron beam radiation.
Claim 29
Dependent Claim
55 words
The method defined in claim 27 wherein said second microcircuit pattern is simultaneously formed on said opposite side of said thin film by establishing a suitable atmosphere for deposition of contamination resist also on said opposite side of said thin film, said second radiation pattern being synonomous with and consisting of said first radiation pattern.
Claim 30
Dependent Claim
121 words
The method defined in claim 27 wherein the atmosphere on said opposite side is controlled so as to be unsuitable for deposition of contamination resist during irradiation with said first radiation pattern, said first radiation pattern of electron beam radiation thereby producing no contamination resist pattern on said opposite side of said thin film, and wherein said second microcircuit pattern is formed by establishing a suitable atmosphere for deposition of contamination resist on said opposite side of said thin film, but not on said one side, during irradiation of said one side with said second radiation pattern of electron beam radiation, said second radiation pattern passing through said thin film and causing deposition of contamination resist only on said opposite side.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-09 | 1989-06-10 | 1989-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-09 | 1993-06-10 | 1993-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-09 | 1997-06-10 | 1997-12-10 | $7700.00 | Window Closed / Lapsed |