Patent US4554569A successfully refreshed from Google Patents.
US4554569A
Expired / Lapsed
US
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Integrated electron circuits having Schottky field effect transistors of P- and N-type
Assignee: Individual
•
Filing: 1982-03-29
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Granted: 1985-11-19
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Expires: 2002-03-29
Abstract
Abstract Electronic circuit containing at least one Schottky field effect transistor with contact elements having different Schottky barrier heights.
Inventors
- 👤 Per-Arne Tove
- 👤 Kjell Bohlin
- 👤 Lars Stolt
- 👤 Herman Norde
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:30
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/64; H10D30/00; H10D30/80; H10D30/87; H10D64/647; H10D64/649; H10D84/00; H10D84/01; H10D86/00; H10D86/01; H10D86/03
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
74 words
Integrated electronic circuit comprising Schottky field effect transistors of both p- and n-type, the contact elements to the transistors comprising two conductor types, the first of which has a low Schottky barrier to n-type material and makes contact with source and drain of n-transistors and gate of p-transistors, and the second of which has a high Schottky barrier to n-type material and makes contact with source and drain of p-transistors and gate of n-transistors.
Claim 2
Dependent Claim
74 words
Integrated electronic circuit comprising Schottky field effect transistors of both p- and n-type, the contact elements to the transistors comprising two conductor types, the first of which has a low Schottky barrier to n-type material and makes contact with source and drain of n-transistors and gate of p-transistors, and the second of which has a high Schottky barrier to n-type material and makes contact with source and drain of p-transistors and gate of n-transistors.
Claim 3
Dependent Claim
17 words
The circuit of claim 1 wherein said two conductor types comprise metals or materials with metallic conductivity.
Claim 4
Dependent Claim
34 words
The circuit of claim 1 or 2 wherein the second conductor comprises material selected from the group consisting of Ir, Pt, Os, Mo, silicides, conducting plastics, Au, Bi, Sb, Ag or (SN) x -polymers.
Claim 5
Dependent Claim
31 words
The circuit of claim 1 wherein the first conductor comprises material selected from the group consisting of Tb, Er, Yb, Y, Mn, Hf, Al, silicides, conducting plastics, Ca, Mg or W.
Claim 6
Dependent Claim
31 words
The circuit of claim 2 wherein the first conductor comprises material selected from the group consisting of Tb, Er, Yb, Y, Mn, Hf, Al, silicides, conducting plastics, Ca, Mg or W.
Claim 7
Dependent Claim
31 words
The circuit of claim 3 wherein the first conductor comprises material selected from the group consisting of Tb, Er, Yb, Y, Mn, Hf, Al, silicides, conducting plastics, Ca, Mg or W.
Claim 8
Dependent Claim
27 words
The circuit of claim 1 wherein the contact pattern connecting the different transistors with each other is of the same material as one of the contact elements.
Claim 9
Dependent Claim
27 words
The circuit of claim 2 wherein the contact pattern connecting the different transistors with each other is of the same material as one of the contact elements.
Claim 10
Dependent Claim
27 words
The circuit of claim 3 wherein the contact pattern connecting the diffeent transistors with each other is of the same material as one of the contact elements.
Claim 11
Dependent Claim
27 words
The circuit of claim 4 wherein the contact pattern connecting the different transistors with each other is of the same material as one of the contact elements.
Claim 12
Dependent Claim
26 words
The circuit of claim 1 wherein the contact pattern connecting the different transistors with each other is of the same two materials as the contact elements.
Claim 13
Dependent Claim
26 words
The circuit of claim 2 wherein the contact pattern connecting the different transistors with each other is of the same two materials as the contact elements.
Claim 14
Dependent Claim
26 words
The circuit of claim 3 wherein the contact pattern connecting the different transistors with each other is of the same two materials as the contact elements.
Claim 15
Dependent Claim
26 words
The circuit of claim 4 wherein the contact pattern connecting the different transistors with each other is of the same two materials as the contact elements.
Claim 16
Dependent Claim
27 words
The circuit of claim 1 wherein the contact pattern connecting the different transistors with each other is of material different from the materials of the contact elements.
Claim 17
Dependent Claim
27 words
The circuit of claim 2 wherein the contact pattern connecting the different transistors with each other is of material different from the materials of the contact elements.
Claim 18
Dependent Claim
27 words
The circuit of claim 3 wherein the contact pattern connecting the different transistors with each other is of material different from the materials of the contact elements.
Claim 19
Dependent Claim
27 words
The circuit of claim 4 wherein the contact pattern connecting the different transistors with each other is of material different from the materials of the contact elements.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-18 | 1989-05-20 | 1989-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-18 | 1993-05-20 | 1993-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-18 | 1997-05-20 | 1997-11-19 | $7700.00 | Window Closed / Lapsed |