US4553318A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor
Assignee: RCA Corp
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Filing: 1983-05-02
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Granted: 1985-11-19
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Expires: 2003-05-02
Abstract
Abstract A semiconductor device and method for making same having three transistors, NPN, PNP, and junction field effect, concurrently formed integral to a common semiconductor device.
Inventors
- 👤 Hosekere S. Chandrasekhar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:21
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0112; H10D84/0119; H10D84/0121; H10D84/02; H10D84/03; H10D84/038; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
285 words
A method of forming a semiconductor device comprising the steps of: (a) forming a plurality of spaced apart conductive wells in the surface of a substrate, each of said wells being dielectrically isolated from said substrate, a first of said wells being of first conductivity type material and a second and third of said wells being of a second conductivity type material, each of said wells having a deep diffusion region and a buried layer region in electrical communication therewith; (b) forming a channel of said first conductivity type material in said second well; (c) forming a base of said second conductivity type material in said first well; (d) forming a base of said first conductivity type material in said third well; (e) forming concurrently a top gate of said second conductivity type material and a bottom gate contact area in said second well, an emitter of said second conductivity type material in said third well, and a base contact area in said first well; (f) forming an emitter of first conductivity type material in said first well, a source and a drain of first conductivity type material in said second well, and a base contact area in said third well; (g) forming a layer of platinum: said deep diffusion region, said base contact area, and said emitter of said first well; said deep diffusion region, said source, said top gate, and said drain in said second well; and said deep diffusion region, said base contact, and said emitter in said third well; (h) alloying said platinum layer of step (g) with the surface of said substrate to form platinum silicide; and (i) forming a plurality of electrical contacts, one on each platinum silicide surface.
Claim 2
Independent Claim
285 words
A method of forming a semiconductor device comprising the steps of: (a) forming a plurality of spaced apart conductive wells in the surface of a substrate, each of said wells being dielectrically isolated from said substrate, a first of said wells being of first conductivity type material and a second and third of said wells being of a second conductivity type material, each of said wells having a deep diffusion region and a buried layer region in electrical communication therewith; (b) forming a channel of said first conductivity type material in said second well; (c) forming a base of said second conductivity type material in said first well; (d) forming a base of said first conductivity type material in said third well; (e) forming concurrently a top gate of said second conductivity type material and a bottom gate contact area in said second well, an emitter of said second conductivity type material in said third well, and a base contact area in said first well; (f) forming an emitter of first conductivity type material in said first well, a source and a drain of first conductivity type material in said second well, and a base contact area in said third well; (g) forming a layer of platinum: said deep diffusion region, said base contact area, and said emitter of said first well; said deep diffusion region, said source, said top gate, and said drain in said second well; and said deep diffusion region, said base contact, and said emitter in said third well; (h) alloying said platinum layer of step (g) with the surface of said substrate to form platinum silicide; and (i) forming a plurality of electrical contacts, one on each platinum silicide surface.
Claim 3
Dependent Claim
38 words
The method as set forth in claim 1 wherein step (i) includes the steps of forming a layer of titanium on the surfaces of said platinum silicide and forming a layer of aluminum on said layer of titanium.
Claim 4
Dependent Claim
81 words
The method as set forth in claim 2 wherein said channel of step (b) is formed by phosphorus implantation and thermally driven; said base of step (d) is formed by deposition of boron oxide from a boron nitride source and thermally driven; said base of step (c) is formed by phosphorus implantation; and said top gate, bottom gate contact area, emitter, and base of step (e) are formed by deposition of boron oxide from a boron nitride source and thermally driven.
Claim 5
Dependent Claim
32 words
The method as set forth in claim 3 wherein said emitter, said source, said drain, and said base contact area of step (f) are formed by phosphorus deposition process and thermally driven.
Claim 6
Dependent Claim
48 words
The method as set forth in claim 4 wherein said layer of platinum of step (g) is formed by sputtering and said alloying of step (h) is effected by heating said substrate to a temperature of about 625° C. for a period of time of about 13 minutes.
Claim 7
Dependent Claim
49 words
The method as set forth in claim 5 wherein said layer of platinum is formed to a thickness of approximately 700 Angstroms, said layer of titanium is formed to a thickness of approximately 2000 Angstroms, and said layer of aluminum is formed to a thickness of approximately 15,000 Angstroms.
Claim 8
Dependent Claim
16 words
The method as set forth in claim 6 including a final step of passivating said semiconductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-18 | 1989-05-20 | 1989-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-18 | 1993-05-20 | 1993-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-18 | 1997-05-20 | 1997-11-19 | $7700.00 | Window Closed / Lapsed |