Abstract An integrated circuit including a Hall effect semiconductor device and a method for making the device. A semiconductor body is carried by a support structure and insulating material forms a plurality of isolated islands in the semiconductor body. In accordance with one embodiment some isolated islands of the semiconductor body have a relatively thick epitaxial layer thereon with transistors or other circuit elements formed therein according to conventional techniques. At least one of the isolated islands has a relatively thin epitaxial layer thereon with a diffused region of conductivity type opposite that of the epitaxial layer formed in the epitaxial layer. The relatively thin epitaxial layer has means forming a pair of current terminals at opposite ends of one lateral dimension thereof and means forming a pair of Hall voltage terminals at opposite ends of the other lateral dimension thereof.
An integrated circuit comprising: a single crystal semiconductor body of one conductivity type, a layer of semiconductive material of the opposite conductivity type carried on one face of said semiconductor body said layer having a planar outer surface and a stepped inner boundary contiguous to said semiconductor body to provide both a relatively thick layer and a relatively thin layer; means for electrically isolating at least a portion of said thin layer from at least a portion of said thick layer; a Hall effect device formed in said thin layer portion; and a transistor formed in said thick layer portion.
Claim 2
Dependent Claim
100 words
An integrated circuit comprising: a single crystal semiconductor body of one conductivity type, a layer of semiconductive material of the opposite conductivity type carried on one face of said semiconductor body said layer having a planar outer surface and a stepped inner boundary contiguous to said semiconductor body to provide both a relatively thick layer and a relatively thin layer; means for electrically isolating at least a portion of said thin layer from at least a portion of said thick layer; a Hall effect device formed in said thin layer portion; and a transistor formed in said thick layer portion.
Claim 3
Dependent Claim
20 words
A circuit as in claim 1 where said thin layer is 2 microns and said thick layer is 12 microns.
Claim 4
Dependent Claim
29 words
A circuit as in claim 1 where said Hall effect device includes a region inset into said thin layer portion of opposite conductivity type to said thin layer portion.
Claim 5
Dependent Claim
40 words
A circuit as in claim 3 where said transistor includes a first region inset into said thick layer portion of opposite conductivity type to such portion and a second region inset into said first region of the same conductivity type.
Claim 6
Dependent Claim
16 words
A circuit as in claim 1 where said layer carried on said semiconductor body is epitaxial.