Planarizing layer for semiconductor substrates such as solid state imagers

Claim 2

In a device comprising a semiconductor substrate including an array of circuit elements having a non-planar topography, the device including a planarizing layer permanently covering said circuit elements; the improvement wherein said planarizing layer comprises a composition prepared from a monomer that produces, on a test substrate comprising a planar surface from which projects a topography of measurable height t, undulations in the top surface of said planarizing layer that have a height t s less than or equal to said height t of the topography of said substrate, less one-half the height t pe of the planarizing layer measured on a smooth, planar portion of said substrate.

Claim 3

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being micro-registered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer comprises a composition prepared from a monomer that produces, on a test substrate comprising a planar surface from which projects a topography of measurable height t, undulations in the top surface of said planarizing layer that have a height t s less than or equal to said height t of the topography of said substrate, less one-half the height t pe of the planarizing layer measured on a smooth, planar portion of said substrate.

Claim 4

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being micro-registered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer comprises a composition prepared from a monomer that produces, on a test substrate comprising a planar surface from which projects a topography of measurable height t, undulations in the top surface of said planarizing layer that have a height t s less than or equal to said height t of the topography of said substrate, less one-half the height t pe of the planarizing layer measured on a smooth, planar portion of said substrate.

Claim 5

A device as defined in claim 1 or 2, wherein said planarizing layer is obtained from a liquid monomer coated onto said substrate, and thereafter polymerized into a crosslinked polymer.

Claim 6

A device as defined in claim 3, wherein said planarizing layer comprises a crosslinked polymer formed from a photopolymerizable liquid monomer coated onto said substrate in the presence of a photoinitiator, and thereafter polymerized into said polymer by exposure to activating radiation.

Claim 7

A device as defined in claim 1 or 2, wherein said monomer is a di-, tri-, or tetraacrylate.

Claim 8

In a device comprising a semiconductor substrate including an array of circuit elements having a non-planar topography, the device including a planarizing layer permanently covering said circuit elements; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) comprises a composition that provides a planarizing factor P that is at least 1.0, wherein P is calculated from the equation P=(1-t.sub.s /t)·[t/(t.sub.s +t.sub.pe -t)], using a test coating of said composition on a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height t of about 1.24μ and a uniform width w no greater than about 8μ, said lines being spaced apart on said surface by about 16μ measured from the center of said lines, said coating being applied to said test substrate under conditions such that, if applied to a smooth, planar surface, it would have a thickness t pe substantially equal to 1.5μ, wherein t s is the extent to which said planarizing layer protrudes, in microns, above the plane which the exterior surface of said planarizing layer occupies between protruded portions of said exterior surface, and, t and t pe are as defined above.

Claim 9

In a device comprising a semiconductor substrate including an array of circuit elements having a non-planar topography, the device including a planarizing layer permanently covering said circuit elements; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) comprises a composition that provides a planarizing factor P that is at least 1.0, wherein P is calculated from the equation P=(1-t.sub.s /t)·[t/(t.sub.s +t.sub.pe -t)], using a test coating of said composition on a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height t of about 1.24μ and a uniform width w no greater than about 8μ, said lines being spaced apart on said surface by about 16μ measured from the center of said lines, said coating being applied to said test substrate under conditions such that, if applied to a smooth, planar surface, it would have a thickness t pe substantially equal to 1.5μ, wherein t s is the extent to which said planarizing layer protrudes, in microns, above the plane which the exterior surface of said planarizing layer occupies between protruded portions of said exterior surface, and, t and t pe are as defined above.

Claim 10

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being micro-registered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) comprises a composition that provides a planarizing factor P that is at least 1.0, wherein P is calculated from the equation P=(1-t.sub.s /t)·[t/(t.sub.s +t.sub.pe -t)] using a test coating of said composition on a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height t of about 1.24μ and a uniform width w no greater than about 8μ, said lines being spaced apart on said surface by about 16μ measured from the center of said lines, said coating being applied to said test substrate under conditions such that, if applied to a smooth, planar surface, it would have a thickness t pe substantially equal to 1.5μ, wherein t s is the extent to which said planarizing layer protrudes, in microns, above the plane which the exterior surface of said planarizing layer occupies between protruded portions of said exterior surface, and, t and t pe are as defined above.

Claim 11

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being micro-registered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) comprises a composition that provides a planarizing factor P that is at least 1.0, wherein P is calculated from the equation P=(1-t.sub.s /t)·[t/(t.sub.s +t.sub.pe -t)] using a test coating of said composition on a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height t of about 1.24μ and a uniform width w no greater than about 8μ, said lines being spaced apart on said surface by about 16μ measured from the center of said lines, said coating being applied to said test substrate under conditions such that, if applied to a smooth, planar surface, it would have a thickness t pe substantially equal to 1.5μ, wherein t s is the extent to which said planarizing layer protrudes, in microns, above the plane which the exterior surface of said planarizing layer occupies between protruded portions of said exterior surface, and, t and t pe are as defined above.

Claim 12

A device as defined in claim 6 or 7, wherein said planarizing layer is obtained from a liquid monomer coated onto said substrate, and thereafter polymerized into a crosslinked polymer.

Claim 13

A device as defined in claim 8, wherein said planarizing layer comprises a crosslinked polymer formed from a photopolymerizable liquid monomer coated onto said substrate in the presence of a photoinitiator, and thereafter polymerized into said polymer by exposure to activating radiation.

Claim 14

A device as defined in claim 9, wherein said monomer is a di-, tri-, or tetraacrylate.

Claim 15

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being microregistered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) when coated onto a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height of about 1.24μ, a uniform width no greater than about 8μ, and a spacing on center of about 16μ, so as to produce a thickness of about 1.5μ when measured by coating said planarizing composition under identical conditions onto a smooth planar surface, protrudes, due to the underlying topography, a distance less than 0.5μ above the plane which the exterior surface of the planarizing layer occupies between said protruded portions of said exterior surface.

Claim 16

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being microregistered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) when coated onto a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height of about 1.24μ, a uniform width no greater than about 8μ, and a spacing on center of about 16μ, so as to produce a thickness of about 1.5μ when measured by coating said planarizing composition under identical conditions onto a smooth planar surface, protrudes, due to the underlying topography, a distance less than 0.5μ above the plane which the exterior surface of the planarizing layer occupies between said protruded portions of said exterior surface.

Claim 17

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being microregistered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) comprises a polymer formed from a liquid monomer coated onto said semiconductor substrate and thereafter polymerized into a crosslinked polymer, said planarizing layer, when coated onto a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height of about 1.24μ, a uniform width no greater than about 8μ, and a spacing on center of about 16μ, so as to produce a thickness of about 1.5μ when measured by coating said planarizing composition under identical conditions onto a smooth planar surface, protrudes, due to the underlying topography, a distance less than 0.5μ above the plane which the exterior surface of the planarizing layer occupies between said protruded portions of said exterior surface.

Claim 18

In a device comprising a substrate of an array of charge-handling semiconductor photosensors, a plurality of radiation-intercepting filter elements sufficient to provide color image detection to said photosensors, said array being microregistered with the sensing areas of said photosensors, and disposed between said filter elements and said photosensors, a planarizing layer having at least 90% transmittance to light of wavelengths greater than 450 nm; the improvement wherein said planarizing layer (a) has a maximum thickness that is no greater than about 3.0μ, and (b) comprises a polymer formed from a liquid monomer coated onto said semiconductor substrate and thereafter polymerized into a crosslinked polymer, said planarizing layer, when coated onto a test substrate comprising a planar surface from which project a plurality of raised, generally parallel lines of rectangular cross-section of a uniform height of about 1.24μ, a uniform width no greater than about 8μ, and a spacing on center of about 16μ, so as to produce a thickness of about 1.5μ when measured by coating said planarizing composition under identical conditions onto a smooth planar surface, protrudes, due to the underlying topography, a distance less than 0.5μ above the plane which the exterior surface of the planarizing layer occupies between said protruded portions of said exterior surface.

Claim 19

A device as defined in claim 12, wherein said monomer is a di-, tri-, or tetraacrylate.