Imaging device having improved blue response

Claim 2

In a silicon imaging device of the type adapted to convert a visible light image directed into a face thereof to electrical signal form and having a sensitivity characteristic that generally increases with wavelength over the visible spectral range, the improvement comprising: a dye-bearing layer superposed over said face, the dye thereof being of a type that fluoresces by absorbing short wavelength visible light and in response thereto emits longer wavelength visible light which is within the operative range of said imaging device, said layer being substantially transparent to green and red light whereby short visible wavelength response is effectively upgraded without degrading green or red response.

Claim 3

In a charge-transfer imaging device for conveying a visible light image directed onto a face thereof to an electrical signal form, which device includes a polysilicon electrode structure that influences the device sensitivity to be higher in a longer-than blue wavelength range than in the blue wavelength range, the improvement comprising: a layer superposed over said face, such layer including a material that a) absorbs light of the blue wavelength range and b) responsively emits light within such longer-than-blue wavelength range, whereby the blue response of the device is effectively upgraded.

Claim 4

In a charge-transfer imaging device for conveying a visible light image directed onto a face thereof to an electrical signal form, which device includes a polysilicon electrode structure that influences the device sensitivity to be higher in a longer-than blue wavelength range than in the blue wavelength range, the improvement comprising: a layer superposed over said face, such layer including a material that a) absorbs light of the blue wavelength range and b) responsively emits light within such longer-than-blue wavelength range, whereby the blue response of the device is effectively upgraded.

Claim 5

A color imaging device comprising: a semiconductor imaging device having respective light sensitive elements and being adapted to be illuminated by image light at a first face thereof, said semiconductor imaging device having a polysilicon electrode structure on said first face whereby short wavelength visible light response is sharply attenuated; a dye-bearing layer superposed over said first face of said imaging device, the dye in said layer being of a type which absorbs light at short wavelengths of the visible spectrum and responsively emits light at a longer-wavelength range to which said semiconductor imaging device is responsive, and said layer being substantially transparent to longer wavelength visible light; and a mosaic of filter elements superposed on said dye layer such elements being in one-to-one registration with the elements of said semiconductor imaging device to selectively limit the visible light components arriving at the respective device elements.

Claim 6

A color imaging device comprising: a semiconductor imaging device having respective light sensitive elements and being adapted to be illuminated by image light at a first face thereof, said semiconductor imaging device having a polysilicon electrode structure on said first face whereby short wavelength visible light response is sharply attenuated; a dye-bearing layer superposed over said first face of said imaging device, the dye in said layer being of a type which absorbs light at short wavelengths of the visible spectrum and responsively emits light at a longer-wavelength range to which said semiconductor imaging device is responsive, and said layer being substantially transparent to longer wavelength visible light; and a mosaic of filter elements superposed on said dye layer such elements being in one-to-one registration with the elements of said semiconductor imaging device to selectively limit the visible light components arriving at the respective device elements.

Claim 7

A color imaging device according to claim 3 wherein the face of said imaging device has a characteristic index of refraction and said dye-bearing layer has an index of refraction which is equal to or lower than that for said semiconductor imaging device.

Claim 8

A color imaging device according to claim 4 wherein said imaging device face is essentially a silicon material and said dye bearing layer is Acriflavine dye in a medium of poly(trifluoroethyl methacrylate).

Claim 9

A color imaging device according to claim 4 wherein a transparent layer is sandwiched between said filter element mosaic and said dye-bearing layer and has a significantly lower index of refraction than said dye-bearing layer.

Claim 10

A color imaging device according to claim 3 wherein (1) the face of said imaging device has a characteristic index of refraction, (2) the dye-bearing layer is a film layer having an index of refraction which is less than that for said semiconductor imaging device and (3) an adhesive layer fills the space between said dye layer and said semiconductor imaging device has an index of refraction which is equal to or greater than the index of refraction for said dye-bearing layer.

Claim 11

A color imaging device according to claim 3 wherein the thickness of said dye-bearing layer is within a range of one-tenth to one-quarter the minimum distance across an individual element of said semiconductor imaging device.

Claim 12

A panchromatic imaging device for visible light images comprising: a solid-state imaging device having respective light sensitive elements and being adapted to be illuminated by visible light at a first face thereof, said element having a sensitivity characteristic which generally increases with wavelength at least over the visible wavelength range, and a layer superposed over the image receiving face of said solid-state device that includes a material which absorbs short wavelength visible light and in response emits longer wavelength light within the operative range of said solid state imaging device whereby increased short wavelength response is achieved, said layer being substantially transparent to green and red light whereby the full visible spectrum influences the device output.

Claim 13

A panchromatic imaging device for visible light images comprising: a solid-state imaging device having respective light sensitive elements and being adapted to be illuminated by visible light at a first face thereof, said element having a sensitivity characteristic which generally increases with wavelength at least over the visible wavelength range, and a layer superposed over the image receiving face of said solid-state device that includes a material which absorbs short wavelength visible light and in response emits longer wavelength light within the operative range of said solid state imaging device whereby increased short wavelength response is achieved, said layer being substantially transparent to green and red light whereby the full visible spectrum influences the device output.

Claim 14

A panchromatic imaging device according to claim 9 wherein said material is a dye that absorbs blue light and the density of the dye is selectively adjusted to achieve a desired balance between blue response and the response over the rest of the visible spectrum.

Claim 15

A panchromatic imaging device according to claim 10 wherein said solid-state imaging device is a silicon charge-transfer-type imaging device having polysilicon electrodes on said first face.

Claim 16

A panchromatic imaging device according to claim 11 wherein said semiconductor imaging device is a charge-coupled device and the dye-bearing layer is comprised of the dye 3-(2-benzothiazoyl)-7-diethylaminocoumarin in a medium of cellulose acetate.

Claim 17

A panchromatic imaging device according to claim 12 wherein said layer has a thickness proportioned in relation to the smallest detail resolvable by said imaging device.