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Patent US4551394A successfully refreshed from Google Patents.
US4551394A
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Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs
Assignee: Honeywell Inc
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Filing: 1984-11-26
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Granted: 1985-11-05
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Expires: 2004-11-26
Abstract
Abstract Localized epitaxial growth of GaAs from a silicon monocrystalline substrate to provide a three-dimensional Si-GaAs structure and method. The silicon has an insulating layer deposited thereover and a window is opened through the layer to expose a small area of the underlying silicon from which silicon is epitaxially grown until the window is nearly full whereupon a thin buffer layer such as germanium is epitaxially grown over the epi-silicon to fill the window. Al x Ga 1-x As (where x≧0) is then locally epitaxially grown from the buffer layer and it grows laterally as well as vertically to cover the surrounding insulating layer surface and provide a site for high frequency electronics.
Inventors
- 👤 Regis J. Betsch
- 👤 Michael S. Liu
- 👤 Obert N. Tufte
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:28
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D84/05; H10D88/00; H10D88/01; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/059; Y10S148/072; Y10S148/084; Y10S438/00; Y10S438/933; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12674; Y10T428/12681
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
124 words
A Si-GaAs integrated electronic structure by localized epitaxial growth comprising: a monocrystalline silicon substrate having a planar surface coated with an insulating layer; said insulating layer having a window down through the layer to the silicon surface thereby exposing a portion of the silicon surface; an epitaxially-grown monocrystalline silicon island grown from said surface portion and filling said window substantially to the upper surface of the insulating layer; an epitaxially-grown monocrystalline thin-film buffer layer grown from and over the surface of said silicon island; an epitaxially-grown monocrystalline layer of Al x Ga 1-x As (where x≧0) grown from said buffer layer which layer of Al x Ga 1-x As extends horizontally from the island over the surface of the insulating layer adjacent said window.
Claim 2
Dependent Claim
124 words
A Si-GaAs integrated electronic structure by localized epitaxial growth comprising: a monocrystalline silicon substrate having a planar surface coated with an insulating layer; said insulating layer having a window down through the layer to the silicon surface thereby exposing a portion of the silicon surface; an epitaxially-grown monocrystalline silicon island grown from said surface portion and filling said window substantially to the upper surface of the insulating layer; an epitaxially-grown monocrystalline thin-film buffer layer grown from and over the surface of said silicon island; an epitaxially-grown monocrystalline layer of Al x Ga 1-x As (where x≧0) grown from said buffer layer which layer of Al x Ga 1-x As extends horizontally from the island over the surface of the insulating layer adjacent said window.
Claim 3
Dependent Claim
18 words
The structure according to claim 1 wherein said insulating layer is on the order of one micron thick.
Claim 4
Dependent Claim
23 words
The structure according to claim 1 wherein the window through the insulating layer has dimensions in the range of 1 to 2 microns.
Claim 5
Dependent Claim
18 words
The structure according to claim 1 wherein the buffer layer is on the order of 2000 Å thick.
Claim 6
Dependent Claim
18 words
The structure according to claim 1 in which said epitaxially grown monocrystalline thin film buffer layer is germanium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-04 | 1989-05-06 | 1989-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-04 | 1993-05-06 | 1993-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-04 | 1997-05-06 | 1997-11-05 | $7700.00 | Window Closed / Lapsed |