Patent US4546376A successfully refreshed from Google Patents.
US4546376A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for semiconductor integrated circuits
Assignee: Citizen Watch Co Ltd
•
Filing: 1983-09-30
•
Granted: 1985-10-08
•
Expires: 2003-09-30
Abstract
Abstract A device for semiconductor integrated circuits having a silicon single crystal film formed on a sapphire substrate by hetero epitaxy and isolated islands having side planes. One of the side planes makes an angle of 65° or more with the surface of the sapphire substrate at a part at least more than half thickness from the surface of the silicon single crystal film and makes an angle of 55° or less at a residual thickness.
Inventors
- 👤 Toshikazu Nakata
- 👤 Takashi Toida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:56
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/117; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10D30/6759; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
76 words
A device for semiconductor integrated circuits having a silicon single crystal film formed on a sapphire substrate by hetero epitaxy and isolated islands having side planes, wherein one of said side planes makes an angle of 65° or more with the surface of said sapphire substrate at a part at least more than half thickness from the surface of said silicon single crystal film and makes an angle of 55° or less at a residual thickness.
Claim 2
Independent Claim
76 words
A device for semiconductor integrated circuits having a silicon single crystal film formed on a sapphire substrate by hetero epitaxy and isolated islands having side planes, wherein one of said side planes makes an angle of 65° or more with the surface of said sapphire substrate at a part at least more than half thickness from the surface of said silicon single crystal film and makes an angle of 55° or less at a residual thickness.
Claim 3
Dependent Claim
16 words
The device according to claim 1 wherein said silicon single crystal film constitutes a MOS transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-07 | 1989-04-08 | 1989-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-07 | 1993-04-08 | 1993-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-07 | 1997-04-08 | 1997-10-08 | $7700.00 | Window Closed / Lapsed |