Patent US4536950A successfully refreshed from Google Patents.
US4536950A
Expired / Lapsed
US
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Method for making semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1984-02-08
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Granted: 1985-08-27
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Expires: 2004-02-08
Abstract
Abstract In making a vertical bipolar transistors, after forming by diffusion process a region to become inactive base region an oxide film is selectively formed on the region, thereafter an ion implantation is carried out to produce regions which become the active base region and emitter region by using the oxide film; thereby such a configuration is formed so that defect part (108) induced at the time of the ion implantation is confined in the emitter region, thereby minimizing the leakage current at the PN junction, and hence assuring production of high performance and high reliability semiconductor devices; further, a high integration is attained by adopting self-alignment in forming emitter contact.
Inventors
- 👤 Hideaki Sadamatsu
- 👤 Michihiro Inoue
- 👤 Akihiro Kanda
- 👤 Akira Matsuzawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:30
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D10/00; H10D10/01; H10D10/051; H10P30/21; H10P30/212; H10P76/00; H10P76/40; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
196 words
A method of making semiconductor device comprising the successive steps of: (1) forming an insulation film on a surface of semiconductor substrate of a first conductivity type; (2) boring an opening in a selected portion of said insulation film thereby exposing said surface of said substrate; (3) forming an antioxidation film directly on a selected region of said exposed surface of said substrate; (4) forming first regions of a second conductivity by diffusion of an impurity through said opening into the portion of said substrate not covered by said antioxidation film; (5) selectively forming an oxide film over the exposed surface of said substrate and the exposed surface of said first regions by thermal oxidation utilizing said antioxidation film as a mask; (6) forming a second region of said second conductivity type communicating with said first regions by ion implantation through said antioxidation film on said semiconductor substrate using said insulation film and said oxide film as an integral mask; and (7) forming a third region of said first conductivity type by ion implantation through said antioxidation film in said first and second regions using said insulation film and said oxide film as an integral mask.
Claim 2
Independent Claim
196 words
A method of making semiconductor device comprising the successive steps of: (1) forming an insulation film on a surface of semiconductor substrate of a first conductivity type; (2) boring an opening in a selected portion of said insulation film thereby exposing said surface of said substrate; (3) forming an antioxidation film directly on a selected region of said exposed surface of said substrate; (4) forming first regions of a second conductivity by diffusion of an impurity through said opening into the portion of said substrate not covered by said antioxidation film; (5) selectively forming an oxide film over the exposed surface of said substrate and the exposed surface of said first regions by thermal oxidation utilizing said antioxidation film as a mask; (6) forming a second region of said second conductivity type communicating with said first regions by ion implantation through said antioxidation film on said semiconductor substrate using said insulation film and said oxide film as an integral mask; and (7) forming a third region of said first conductivity type by ion implantation through said antioxidation film in said first and second regions using said insulation film and said oxide film as an integral mask.
Claim 3
Dependent Claim
30 words
The method for making semiconductor device in accordance with claim 1 in which the semiconductor substrate is an epitaxial layer formed on a silicon substrate of a second conductivity type.
Claim 4
Independent Claim
285 words
A method for making semiconductor device comprising the successive steps of: (1) forming at least one insulation film on a surface of a semiconductor substrate of a first conductivity type; (2) boring an opening in a selected portion of said insulation film thereby exposing said surface of said substrate; (3) forming an antioxidation film directly on a selected region of said exposed surface of said substrate; (4) forming a first oxide film containing a high concentration of impurity of said first conductivity type on said antioxidation film; (5) forming first regions of a second conductivity type in said semiconductor substrate by diffusing an impurity using said antioxidation film as a mask; (6) forming an overriding polycrystalline silicon film over the entire surface of said substrate; (7) diffusing an impurity of said first conductivity type from said first oxide film into said overriding polycrystalline silicon film; (8) selectively removing predetermined portions of polycrystalline silicon film which are on said first oxide film; (9) removing said first oxide film; (10) oxidizing said polycrystalline silicon film using said antioxidation film as a mask to produce a second oxide mask on said semiconductor substrate; (11) forming a second region of said second conductivity type connected to said first region by ion implantation through said antioxidation film on said semiconductor substrate using said insulation film and said oxide film as an integral mask; (12) forming a third region of said first conductivity type by ion implantation through said antioxidation film in said first and second region using said insulation film and said second oxide film as an integral mask; (13) removing said antioxidation film; and (14) forming an electrode on the region from which said anitoxidation film has been removed.
Claim 5
Independent Claim
285 words
A method for making semiconductor device comprising the successive steps of: (1) forming at least one insulation film on a surface of a semiconductor substrate of a first conductivity type; (2) boring an opening in a selected portion of said insulation film thereby exposing said surface of said substrate; (3) forming an antioxidation film directly on a selected region of said exposed surface of said substrate; (4) forming a first oxide film containing a high concentration of impurity of said first conductivity type on said antioxidation film; (5) forming first regions of a second conductivity type in said semiconductor substrate by diffusing an impurity using said antioxidation film as a mask; (6) forming an overriding polycrystalline silicon film over the entire surface of said substrate; (7) diffusing an impurity of said first conductivity type from said first oxide film into said overriding polycrystalline silicon film; (8) selectively removing predetermined portions of polycrystalline silicon film which are on said first oxide film; (9) removing said first oxide film; (10) oxidizing said polycrystalline silicon film using said antioxidation film as a mask to produce a second oxide mask on said semiconductor substrate; (11) forming a second region of said second conductivity type connected to said first region by ion implantation through said antioxidation film on said semiconductor substrate using said insulation film and said oxide film as an integral mask; (12) forming a third region of said first conductivity type by ion implantation through said antioxidation film in said first and second region using said insulation film and said second oxide film as an integral mask; (13) removing said antioxidation film; and (14) forming an electrode on the region from which said anitoxidation film has been removed.
Claim 6
Dependent Claim
30 words
The method for making semiconductor device in accordance with claim 3 in which the semiconductor substrate is an epitaxial layer formed on a silicon substrate of a second conductivity type.
Claim 7
Dependent Claim
34 words
The method for making semiconductor device in accordance with claim 3 in which step 4 further comprises etching to form side end portions and forming a second antioxidation film covering said side end portions.
Claim 8
Dependent Claim
23 words
The method for making semiconductor device in accordance with claim 3 in which said antioxidation film is an Si 3 N 4 film.
Claim 9
Dependent Claim
30 words
The method for making semiconductor device in accordance with claim 3 in which a second antioxidation film is formed on said first oxide film after forming said first oxide film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-26 | 1989-02-25 | 1989-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-26 | 1993-02-25 | 1993-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-26 | 1997-02-25 | 1997-08-27 | $7700.00 | Window Closed / Lapsed |