Patent US4535528A successfully refreshed from Google Patents.
US4535528A
Expired / Lapsed
US
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Method for improving reflow of phosphosilicate glass by arsenic implantation
Assignee: HP Inc
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Filing: 1983-12-02
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Granted: 1985-08-20
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Expires: 2003-12-02
Abstract
Abstract A method of making improved step metal coverage of semiconductor device using enhanced reflow of phosphosilicate glass by ion implantation of arsenic at low temperature is provided. In one embodiment, the fabrication processing includes implanting arsenic into the phosphosilicate glass and reflowing the ion implanted phosphosilicate glass by heating the phosphosilicate glass to smooth the phosphosiliate glass for allowing a metal interconnection.
Inventors
- 👤 Devereaux C. Chen
- 👤 Horng-Sen Fu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:29
CPC Classifications
H; H10; H10P; H10P95/00; H10P30/00; H10P30/40; Y; Y10; Y10S; Y10S148/00; Y10S148/133; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
41 words
A method of smoothing a layer comprising a phosphosilicate glass layer having a step profile in a semiconductor device comprising the steps of: implanting arsenic into said layer; and reflowing said layer by heating said layer sufficiently to smooth said layer.
Claim 2
Independent Claim
41 words
A method of smoothing a layer comprising a phosphosilicate glass layer having a step profile in a semiconductor device comprising the steps of: implanting arsenic into said layer; and reflowing said layer by heating said layer sufficiently to smooth said layer.
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein said layer includes a layer of silicon dioxide as a barrier layer.
Claim 4
Dependent Claim
26 words
A method according to claim 1, wherein said step of heating said layer includes heating said layer to a temperature not exceeding approximately 1000 degrees C.
Claim 5
Dependent Claim
26 words
A method according to claim 1, wherein said step of implanting arsenic into said layer includes implanting arsenic above an incident energy of approximately 90 KeV.
Claim 6
Dependent Claim
29 words
A method according to claim 1, wherein said step of implanting arsenic into said layer includes implanting arsenic above a range of approximately 10 16 per cm 2 .
Claim 7
Dependent Claim
28 words
A method according to claim 1, wherein said step of reflowing sa:d layer includes reflowing said layer in a reflow ambient of nitrogen with approximately above 3% oxygen.
Claim 8
Dependent Claim
80 words
A method according to claim 1, wherein said step of implanting arsenic into said layer includes implanting arsenic above an incident energy of approximately 90 KeV and above a dosage range of approximately 10 16 per cm 2 , said step of heating said layer includes heating said layer to a temperature not exceeding approximately 1000 degrees C., and said step of reflowing said layer includes reflowing said layer in a reflow ambient of nitrogen with approximately above 3% oxygen.
Claim 9
Dependent Claim
17 words
A method according to claim 1, wherein said semiconductor device is an n-channel metal oxide semiconductor device.
Claim 10
Dependent Claim
17 words
A method according to claim 1, wherein said semiconductor device is a p-channel metal oxide semiconductor device.
Claim 11
Dependent Claim
17 words
A method according to claim 1, wherein said semiconductor device is a complementary metal oxide semiconductor device.
Claim 12
Dependent Claim
15 words
A method according to claim 1, wherein said semiconductor device is a bipolar semiconductor device.
Claim 13
Independent Claim
80 words
A method of making a semiconductor device comprising the steps of: forming a region of another conductivity type in a substrate of one conductivity type; forming an insulator layer comprising a phosphosilicate glass layer on said substrate; implanting arsenic into said insulator layer; forming a contact window through said insulator layer for allowing a metal coverage contact to said region of another conductivity type; and reflowing said insulator layer by heating said insulator layer sufficiently to smooth said insulator layer.
Claim 14
Independent Claim
80 words
A method of making a semiconductor device comprising the steps of: forming a region of another conductivity type in a substrate of one conductivity type; forming an insulator layer comprising a phosphosilicate glass layer on said substrate; implanting arsenic into said insulator layer; forming a contact window through said insulator layer for allowing a metal coverage contact to said region of another conductivity type; and reflowing said insulator layer by heating said insulator layer sufficiently to smooth said insulator layer.
Claim 15
Dependent Claim
36 words
A method according to claim 12, wherein the step of forming an insulator layer includes the step of forming a layer of silicon dioxide as a barrier layer and then forming the layer of phosphosilicate glass.
Claim 16
Dependent Claim
28 words
A method according to claim 12, wherein said step of heating said insulator layer includes heating said insulator layer to a temperature not exceeding approximately 1000 degrees C.
Claim 17
Dependent Claim
27 words
A method according to claim 12, wherein said step of implanting arsenic into said insulator layer includes implanting arsenic above an incident energy of approximately 90 KeV.
Claim 18
Dependent Claim
31 words
A method according to claim 12, wherein said step of implanting arsenic into said insulator layer includes implanting arsenic above a dosage range of approximately 10 16 per cm 2 .
Claim 19
Dependent Claim
30 words
A method according to claim 12, wherein said step of reflowing said insulator layer includes reflowing said insulator layer in a reflow ambient of nitrogen with approximately above 3% oxygen.
Claim 20
Dependent Claim
85 words
A method according to claim 12, wherein said step of implanting arsenic into said insulator layer includes implanting arsenic above an incident energy of approximately 90 KeV and above a dosage range of approximately 10 16 per cm 2 , said step of heating said insulator layer includes heating said insulator layer to a temperature not exceeding approximately 1000 degrees C., and said step of reflowing said insulator layer includes reflowing said insulator layer in a reflow ambient of nitrogen with approximately above 3% oxygen.
Claim 21
Dependent Claim
17 words
A method according to claim 12, wherein said semiconductor device is an n-channel metal oxide semiconductor device.
Claim 22
Dependent Claim
17 words
A method according to claim 12, wherein said semiconductor device is a p-channel metal oxide semiconductor device.
Claim 23
Dependent Claim
17 words
A method according to claim 12, wherein said semiconductor device is a complementary metal oxide semiconductor device.
Claim 24
Dependent Claim
15 words
A method according to claim 12, wherein said semiconductor device is a bipolar semiconductor device.
Claim 25
Independent Claim
99 words
A method of making a semiconductor device comprising the steps of: forming a plurality of regions of another conductivity type in a substrate of one conductivity type; forming an insulator layer comprising a phosphosilicate glass layer on said substrate; forming at least one layer of gates and gate interconnections on said insulating layer; forming a multilevel interconnect system insulating layer on said layer of gates and gate interconnections; implanting arsenic into said multilevel interconnect system insulator layer; and reflowing said multilevel interconnect system insulator layer by heating said multilevel interconnect system insulator layer sufficiently to smooth said insulator layer.
Claim 26
Independent Claim
99 words
A method of making a semiconductor device comprising the steps of: forming a plurality of regions of another conductivity type in a substrate of one conductivity type; forming an insulator layer comprising a phosphosilicate glass layer on said substrate; forming at least one layer of gates and gate interconnections on said insulating layer; forming a multilevel interconnect system insulating layer on said layer of gates and gate interconnections; implanting arsenic into said multilevel interconnect system insulator layer; and reflowing said multilevel interconnect system insulator layer by heating said multilevel interconnect system insulator layer sufficiently to smooth said insulator layer.
Claim 27
Dependent Claim
36 words
A method according to claim 23, wherein the step of forming an insulator layer includes the step of forming a layer of silicon dioxide as a barrier layer and then forming the layer of phosphosilicate glass.
Claim 28
Dependent Claim
28 words
A method according to claim 23, wherein said step of heating said insulator layer includes heating said insulator layer to a temperature not exceeding approximately 1000 degrees C.
Claim 29
Dependent Claim
27 words
A method according to claim 23, wherein said step of implanting arsenic into said insulator layer includes implanting arsenic above an incident energy of approximately 90 KeV.
Claim 30
Dependent Claim
31 words
A method according to claim 23, wherein said step of implanting arsenic into said insulator layer includes implanting arsenic above a dosage range of approximately 10 16 per cm 2 .
Claim 31
Dependent Claim
30 words
A method according to claim 23, wherein said step of reflowing said insulator layer includes reflowing said insulator layer in a reflow ambient of nitrogen with approximately above 3% oxygen.
Claim 32
Dependent Claim
85 words
A method according to claim 23, wherein said step of implanting arsenic into said insulator layer includes implanting arsenic above an incident energy of approximately 90 KeV and above a dosage range of approximately 10 16 per cm 2 , said step of heating said insulator layer includes heating said insulator layer to a temperature not exceeding approximately 1000 degrees C., and said step of reflowing said insulator layer includes reflowing said insulator layer in a reflow ambient of nitrogen with approximately above 3% oxygen.
Claim 33
Dependent Claim
17 words
A method according to claim 23, wherein said semiconductor device is an n-channel metal oxide semiconductor device.
Claim 34
Dependent Claim
17 words
A method according to claim 23, wherein said semiconductor device is a p-channel metal oxide semiconductor device.
Claim 35
Dependent Claim
17 words
A method according to claim 23, wherein said semiconductor device is a complementary metal oxide semiconductor device.
References Cited (Backward Citations)
US4319260A
Cited
US4404733A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1988-08-19 | 1989-02-18 | 1989-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-19 | 1993-02-18 | 1993-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-19 | 1997-02-18 | 1997-08-20 | $7700.00 | Window Closed / Lapsed |