Patent US4532003A successfully refreshed from Google Patents.
US4532003A
Expired / Lapsed
US
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Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance
Assignee: Intersil Corp
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Filing: 1982-08-09
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Granted: 1985-07-30
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Expires: 2002-08-09
Abstract
Abstract A bipolar transistor having a first and second selective collector region extending from a buried high impurity region to the surface of the substrate. The first selective region defines the plane breakdown voltage to be equivalent to the planar breakdown voltage of the base-collector junction and the selective regions and the buried layer form a low series resistance collector.
Inventors
- 👤 James D. Beasom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
192 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming in a substrate of a first conductivity type a first and second selective region of said first conductivity type extending from the bottom toward the top surface of said substrate and having an impurity concentration greater than said substrate; forming in the bottom of said substrate a buried region of said first conductivity type and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity in said substrate over said first selective region, said base region having a greater lateral area than said first selective region to form a buried junction therewith, the impurity concentration of said first selective region at said buried junction being sufficiently greater than said first impurity concentration of said substrate to produce a plane breakdown voltage equivalent to the planar breakdown voltage; forming an emitter region in said base region of said first conductivity type; and forming a collector contact region in the surface of said second selective region of said first conductivity type and having an impurity concentration greater than said second selective region.
Claim 2
Independent Claim
192 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming in a substrate of a first conductivity type a first and second selective region of said first conductivity type extending from the bottom toward the top surface of said substrate and having an impurity concentration greater than said substrate; forming in the bottom of said substrate a buried region of said first conductivity type and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity in said substrate over said first selective region, said base region having a greater lateral area than said first selective region to form a buried junction therewith, the impurity concentration of said first selective region at said buried junction being sufficiently greater than said first impurity concentration of said substrate to produce a plane breakdown voltage equivalent to the planar breakdown voltage; forming an emitter region in said base region of said first conductivity type; and forming a collector contact region in the surface of said second selective region of said first conductivity type and having an impurity concentration greater than said second selective region.
Claim 3
Dependent Claim
38 words
The method according to claim 1, wherein said first and second selective regions are formed by diffusing impurities in from the back of the substrate toward said surface to form graded selective regions decreasing toward the top surface.
Claim 4
Dependent Claim
46 words
The method according to claim 1, wherein said first and second selective regions are formed by etching said substrate to form first and second openings and epitaxially filling said openings while varying the impurity concentration to form a graded selective region decreasing from the buried region.
Claim 5
Dependent Claim
32 words
The method according to claim 1, wherein the impurity concentration of said first selective region adjacent the base is formed to be up to four times the impurity concentration of the substrate.
Claim 6
Dependent Claim
28 words
The method according to claim 1, wherein said emitter region is formed above said first selective region and has a smaller lateral area than said first selective region.
Claim 7
Dependent Claim
18 words
The method according to claim 1, wherein said emitter region and said collector contact region are formed simultaneously.
Claim 8
Independent Claim
160 words
A method of fabricating a vertical bipolar transistor comprising: forming in a substrate of a first conductivity type a first and second selective region of a second conductivity type opposite said first conductivity type extending up from the bottom of said substrate buried region toward the surface of said substrate; forming in the bottom of said substrate a buried region of said second conductivity type; forming a base region of said first conductivity in said substrate over said first selective region, said base region having a greater lateral area than said first selective region to form a buried junction therewith, the impurity concentration of said base region being greater than said first impurity concentration of said substrate; forming an emitter region in said base region of said second conductivity type; and forming a collector contact region in the surface of said second selective region of said second conductivity type and having an impurity concentration greater than said second selective region.
Claim 9
Independent Claim
160 words
A method of fabricating a vertical bipolar transistor comprising: forming in a substrate of a first conductivity type a first and second selective region of a second conductivity type opposite said first conductivity type extending up from the bottom of said substrate buried region toward the surface of said substrate; forming in the bottom of said substrate a buried region of said second conductivity type; forming a base region of said first conductivity in said substrate over said first selective region, said base region having a greater lateral area than said first selective region to form a buried junction therewith, the impurity concentration of said base region being greater than said first impurity concentration of said substrate; forming an emitter region in said base region of said second conductivity type; and forming a collector contact region in the surface of said second selective region of said second conductivity type and having an impurity concentration greater than said second selective region.
Claim 10
Dependent Claim
38 words
The method according to claim 7, wherein said first and second selective regions are formed by diffusing impurities in from the back of the substrate toward said surface to form a graded region decreasing toward the top surface.
Claim 11
Dependent Claim
45 words
The method according to claim 7, wherein said first and second selective regions are formed by etching said substrate to form first and second openings and epitaxially filling said openings while varying the impurity concentration to form graded selective regions decreasing from said buried region.
Claim 12
Dependent Claim
24 words
The method according to claim 7, wherein the impurity concentration of said first selective region decreases from the buried region to said base region.
Claim 13
Dependent Claim
28 words
The method according to claim 7, wherein said emitter region is formed above said first selective region and has a smaller lateral area than said first selective region.
Claim 14
Dependent Claim
18 words
The method according to claim 7, wherein said emitter region and said collector contact region are formed simultaneously.
Claim 15
Dependent Claim
23 words
The method according to claim 7, wherein said second selective region is formed as a ring spaced from and encompassing said base region.
Claim 16
Dependent Claim
22 words
The method according to claim 13, wherein said buried region is formed with its lateral edges terminating within said second selective region.
Claim 17
Dependent Claim
29 words
The method according to claim 13, wherein said collector contact region has a smaller lateral area than said second selective region and is encompassed by said second selective region.
Claim 18
Independent Claim
203 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming in a substrate of a first conductivity type a first and second selective region of said first conductivity type extending from the bottom of said substrate substantially to the surface of said substrate and having an impurity concentration greater than said substrate; forming in the bottom of said substrate intersecting said first and second selective regions a buried region of said first conductivity type and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region and terminating short of said first selective region, said base region having a greater lateral area than said first selective region; forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region; forming a collector contact region of said first conductivity type in the surface of said substrate above said second selective region and terminating short of said second selective region and having an impurity concentration greater than said second selective region.
Claim 19
Independent Claim
203 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming in a substrate of a first conductivity type a first and second selective region of said first conductivity type extending from the bottom of said substrate substantially to the surface of said substrate and having an impurity concentration greater than said substrate; forming in the bottom of said substrate intersecting said first and second selective regions a buried region of said first conductivity type and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region and terminating short of said first selective region, said base region having a greater lateral area than said first selective region; forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region; forming a collector contact region of said first conductivity type in the surface of said substrate above said second selective region and terminating short of said second selective region and having an impurity concentration greater than said second selective region.
Claim 20
Dependent Claim
56 words
The method according to claim 16, wherein said buried region and said first and second regions are formed by simultaneously diffusing into the bottom of said substrate a first impurity to form said buried layer and a second impurity having a greater diffusion constant than said first impurity to form said first and second selective regions.
Claim 21
Independent Claim
177 words
A method of fabricating a vertical bipolar transistor comprising: forming in the bottom of a substrate of a first conductivity type a buried region of said first conductivity type and having a greater impurity concentration than said substrate; simultaneously forming in the surface of said substrate a first and second selective region of said first conductivity type and having an impurity concentration higher than said substrate and extending substantially to and terminating short of said buried region; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region, said base region having a greater lateral area than said first selective region; forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region; forming a collector contact region in the surface of said second selective region of said first conductivity type and having an impurity concentration greater than said second selective region.
Claim 22
Independent Claim
177 words
A method of fabricating a vertical bipolar transistor comprising: forming in the bottom of a substrate of a first conductivity type a buried region of said first conductivity type and having a greater impurity concentration than said substrate; simultaneously forming in the surface of said substrate a first and second selective region of said first conductivity type and having an impurity concentration higher than said substrate and extending substantially to and terminating short of said buried region; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region, said base region having a greater lateral area than said first selective region; forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region; forming a collector contact region in the surface of said second selective region of said first conductivity type and having an impurity concentration greater than said second selective region.
Claim 23
Independent Claim
141 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming, in a substrate of a first conductivity type, a first and second selective region of said first conductivity type extending from the bottom toward to the top surface of said substrate and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity type in said substrate over said first selective region, said base region having a greater lateral area than said first selective region to form a buried junction therewith, the impurity concentration of said first selective region at said buried junction being sufficiently greater than said first impurity concentration of said substrate to produce a plane breakdown voltage equivalent to the planar breakdown voltage; and forming an emitter region in said base region of said first conductivity type.
Claim 24
Independent Claim
141 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming, in a substrate of a first conductivity type, a first and second selective region of said first conductivity type extending from the bottom toward to the top surface of said substrate and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity type in said substrate over said first selective region, said base region having a greater lateral area than said first selective region to form a buried junction therewith, the impurity concentration of said first selective region at said buried junction being sufficiently greater than said first impurity concentration of said substrate to produce a plane breakdown voltage equivalent to the planar breakdown voltage; and forming an emitter region in said base region of said first conductivity type.
Claim 25
Dependent Claim
40 words
A method according to claim 19 including forming in the bottom of said substrate a buried region of said first conductivity type extending laterally between said first and second selective regions and having an impurity concentration greater than said substrate.
Claim 26
Dependent Claim
36 words
A method according to claim 19 including forming a collector contact region in the surface of said second selective region of said first conductivity type and having an impurity concentration greater than said second selective region.
Claim 27
Independent Claim
147 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming, in a substrate of a first conductivity type, a first and second selective region of said first conductivity type extending from a bottom region of said substrate, having a first conductivity type and impurity concentration greater than said substrate, substantially to the top surface of said substrate and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region and terminating short of said first selective region, said base region having a greater lateral area than said first selective region; and forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region.
Claim 28
Independent Claim
147 words
A method of fabricating a vertical bipolar transistor comprising: simultaneously forming, in a substrate of a first conductivity type, a first and second selective region of said first conductivity type extending from a bottom region of said substrate, having a first conductivity type and impurity concentration greater than said substrate, substantially to the top surface of said substrate and having an impurity concentration greater than said substrate; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region and terminating short of said first selective region, said base region having a greater lateral area than said first selective region; and forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region.
Claim 29
Dependent Claim
47 words
A method according to claim 22 including forming a collector contact region of said first conductivity type in the surface of said substrate above said second selective region and terminating short of said second selective region and having an impurity concentration greater than said second selective region.
Claim 30
Independent Claim
150 words
A method of fabricating a vertical bipolar transistor comprising: forming in the bottom of a substrate of a first conductivity type a buried region of said first conductivity type and having a greater impurity concentration than said substrate; simultaneously forming in the top surface of said substrate a first and second selective region of said first conductivity type and having an impurity concentration higher than said substrate and extending substantially to and terminating short of said buried region; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region, said base region having a greater lateral area than said first selective region; and forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region.
Claim 31
Independent Claim
150 words
A method of fabricating a vertical bipolar transistor comprising: forming in the bottom of a substrate of a first conductivity type a buried region of said first conductivity type and having a greater impurity concentration than said substrate; simultaneously forming in the top surface of said substrate a first and second selective region of said first conductivity type and having an impurity concentration higher than said substrate and extending substantially to and terminating short of said buried region; forming a base region of a second conductivity type opposite said first conductivity type in the surface of said substrate over said first selective region, said base region having a greater lateral area than said first selective region; and forming an emitter region of said first conductivity type in said base region above said first selective region and having a lateral area less than the lateral area of said first selective region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-29 | 1989-01-28 | 1989-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-29 | 1993-01-28 | 1993-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-29 | 1997-01-28 | 1997-07-30 | $7700.00 | Window Closed / Lapsed |