US3814997A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device suitable for impatt diodes or varactor diodes
Assignee: Hitachi Ltd
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Filing: 1973-06-06
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Granted: 1974-06-04
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Expires: 1993-06-06
Abstract
Abstract A semiconductor device suitable for IMPATT diodes or varactor diodes which are used in the microwave of millimeter wave band in which an n type GaAs body whose impurity concentration is about 8 X 1016 cm 3 having a small cross-sectional area surrounded by an intrinsic or n type GaAs layer is disposed on an n type GaAs substrate region. A p type region having a lateral extension far greater than that of the n type GaAs body is disposed over the n type GaAs body to form a small entirely flat area p-n junction therebetween. Ohmic electrodes are disposed on the p type region and the n type GaAs substrate. This structure provides a high breakdown voltage, a low junction resistance and a small junction capacitance, and facilitates the leading out of the electrode.
Inventors
- 👤 S Iida
- 👤 Y Kaneko
- 👤 M Migitaka
- 👤 S Takahashi
- 👤 H Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:11
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10D8/00; H10D8/40; Y; Y10; Y10S; Y10S148/00; Y10S148/035; Y10S148/04; Y10S148/049; Y10S148/051; Y10S148/125; Y10S148/145; Y10S148/167
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
31 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 1, wherein said semiconductor substrate has a projection, and said first semiconductor body is diSposed on said projection.
Claim 2
Dependent Claim
105 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 1, which further comprises a second semiconductor body having said second conductivity type, and a diameter, the same as that of said first semiconductor body having said first conductivity type, disposed between said semiconductor region and said first semiconductor body of said first conductivity type, thereby forming a p-n junction therebetween, and said semiconductor layer is disposed on the surfaces of said first and second semiconductor bodies so as to cover at least a portion of the surface of said first and second semiconductor bodies at which said p-n junction is exposed.
Claim 3
Dependent Claim
36 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 3, wherein said semiconductor substrate has a projection, and said first semiconductor body of said first conductivity type is disposed on said projection.
Claim 4
Dependent Claim
36 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 3, wherein said second semiconductor body has the same impurity concentration as that of said first semiconductor body of said first conductivity type.
Claim 5
Dependent Claim
38 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 3, wherein said second semiconductor body has a different impurity concentration with respect to that of said first semiconductor body of said first conductivity type.
Claim 6
Dependent Claim
36 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 3, wherein said second semiconductor body has an impurity concentration higher than that of said first semiconductor body of said first conductivity type.
Claim 7
Dependent Claim
36 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 4, wherein said second semiconductor body has the same impurity concentration as that of said first semiconductor body of said first conductivity type.
Claim 8
Dependent Claim
38 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 4, wherein said second semiconductor body has a different impurity concentration with respect to that of said first semiconductor body of said first conductivity type.
Claim 9
Dependent Claim
36 words
A semiconductor device suitable for IMPATT diodes or varactor diodes according to claim 4, wherein said second semiconductor body has an impurity concentration higher than that of said first semiconductor body of said first conductivity type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-03 | 1977-12-03 | 1978-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-03 | 1981-12-03 | 1982-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-03 | 1985-12-03 | 1986-06-04 | $7700.00 | Window Closed / Lapsed |