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US4530152A
Expired / Lapsed
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Method for encapsulating semiconductor components using temporary substrates
Assignee: Alcatel CIT SA
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Filing: 1983-04-01
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Granted: 1985-07-23
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Expires: 2003-04-01
Abstract
Abstract In the manufacture of a semiconductor component, connection areas adapted to connect the component externally are formed by a metal array (3, 4) deposited on a conductive layer (6) of low melting point alloy, itself deposited on a metal temporary substrate (7). Each component chip (1) is placed in position and connected and then immobilized by means of a hardenable resin (5). The temporary substrate (7) is then removed by melting the alloy layer (6) to expose the surfaces of the connection areas (3, 4) for making external electrical and/or thermal connections to the encapsulated component.
Inventors
- 👤 Georges Roche
- 👤 Jacques Lantaires
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:03
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/019; H10W74/014; H10W74/10; H10W74/111; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/7424; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/073; H10W72/50; H10W72/541; H10W72/5449; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754; Y; Y10; Y10S; Y10S148/00; Y10S148/135; Y10T; Y10T156/00; Y10T156/10; Y10T156/1089; Y10T156/1092; Y10T156/1093; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169; Y10T29/49171; Y10T29/49172
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
131 words
A method of forming encapsulated semiconductor components comprising the steps of: depositing a conductive layer of low melting point alloy on a metal temporary substrate, depositing a metal array on said conductive layer of low melting point alloy to form connection areas to permit said components to be connected externally, placing each component chip in position on said metal array, electrically connecting each component chip to said connection area, immobilizing the components by molding or pouring a hardenable resin over each component consisting of a chip, its electrical connections and its connection areas, and hardening said resin, and melting the alloy layer to permit removal of the temporary substrate and expose the surface of the connection areas for permitting external electrical and/or thermal connections to be made to said encapsulated components.
Claim 2
Independent Claim
131 words
A method of forming encapsulated semiconductor components comprising the steps of: depositing a conductive layer of low melting point alloy on a metal temporary substrate, depositing a metal array on said conductive layer of low melting point alloy to form connection areas to permit said components to be connected externally, placing each component chip in position on said metal array, electrically connecting each component chip to said connection area, immobilizing the components by molding or pouring a hardenable resin over each component consisting of a chip, its electrical connections and its connection areas, and hardening said resin, and melting the alloy layer to permit removal of the temporary substrate and expose the surface of the connection areas for permitting external electrical and/or thermal connections to be made to said encapsulated components.
Claim 3
Dependent Claim
47 words
A method according to claim 1, wherein said step of depositing said metal array on said conductive layer of low melting point alloy comprises cutting out said metal array from a metal film and soldering said metal array to the alloy layer by heating said alloy layer.
Claim 4
Dependent Claim
31 words
A method according to claim 1, wherein said step of depositing a metal array on said conductive layer of low melting point alloy comprises selectively depositing metal on said alloy layer.
Claim 5
Dependent Claim
42 words
A method according to claim 1, wherein said step of depositing said metal alloy metal array on a conductive layer of low melting point alloy comprises uniformly depositing metal on the alloy layer and then selectively removing parts of the metal deposit.
Claim 6
Dependent Claim
39 words
A method according to claim 1, wherein the connection areas are tinned prior to soldering the external connections by the melting of the alloy layer between the temporary substrate and the metal layer in order to remove said substrate.
Claim 7
Independent Claim
122 words
A method of encapsulating semiconductor components including component chips, said method comprising the steps of: depositing a low melting point alloy layer on a metal temporary substrate, depositing metal on the alloy layer to form a connection array, fitting said chips to said deposited metal and wiring them to the connection areas of said connection array, molding or pouring a hardenable resin over each component consisting of a chip, its connecting wires and its connection areas, hardening the resin, and melting the alloy to separate the temporary substrate and the metal connection array to expose the surfaces of the connection areas for permitting external electrical and/or thermal connections to be made to the component whose surfaces are tinned by the molten alloy.
Claim 8
Independent Claim
122 words
A method of encapsulating semiconductor components including component chips, said method comprising the steps of: depositing a low melting point alloy layer on a metal temporary substrate, depositing metal on the alloy layer to form a connection array, fitting said chips to said deposited metal and wiring them to the connection areas of said connection array, molding or pouring a hardenable resin over each component consisting of a chip, its connecting wires and its connection areas, hardening the resin, and melting the alloy to separate the temporary substrate and the metal connection array to expose the surfaces of the connection areas for permitting external electrical and/or thermal connections to be made to the component whose surfaces are tinned by the molten alloy.
Claim 9
Dependent Claim
78 words
A method according to claim 6, wherein said step of depositing said metal layer comprises depositing a regular pattern providing a center area for thermal diffusion having dimensions corresponding to those of the chips to be applied thereto, and satellite connection areas surrounding the center area, and wherein the various areas of the pattern define a mechanical unity which can be separated by cutting after fitting the chip, connecting up the connecting wires and hardening the encapsulating resin.
Claim 10
Dependent Claim
97 words
A method according to claim 6, wherein the step of depositing said metal layer comprises depositing said metal layer in accordance with a regular pattern comprising a plurality of identical lands in a matrix arrangement to create a thermal diffusion area under each chip by means of number of lands on which the chip is located and wherein the connection of connecting wires is from the chip to lands surrounding the chip such that the resulting unit can be mechanically separated by cutting after fitting the chip, connecting up the connecting wires and hardening the encapsulating resin.
References Cited (Backward Citations)
US3689336A
Cited
US3739462A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-22 | 1989-01-21 | 1989-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-22 | 1993-01-21 | 1993-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-22 | 1997-01-21 | 1997-07-23 | $7700.00 | Window Closed / Lapsed |