Method of manufacturing a single crystal of a III-V compound

Claim 1

A method of manufacturing a semiconductor monocrystal of a III-V compound, which compound consists of a first, relatively volatile element, and a second, relatively non-volatile, element, said method comprising: (a) placing a quantity of a polycrystalline form of said III-V compound together with a significant amount of said second, relatively non-volatile element in a first portion of a closed space in a first heating zone of a furnace, (b) placing in a second portion of said closed space, and in a second heating zone of said furnace, a quantity of said first, relatively volatile element sufficiently in excess of the stoichiometric quantity thereof required to react with said amount of said second, relatively non-volatile element to provide a vapor pressure of said relatively volatile element, in said closed space, sufficiently large to counteract the dissociation of said III-V compound at a temperature approximately that of the melting point of said III-V compound, (c) raising the temperature of said first heating zone sufficiently to dissolve said polycrystalline semiconductor III-V compound in said second, relatively non-volatile element, but below the melting point of said III-V compound, heating while raising the temperature of said second heating zone to a point sufficiently high to cause the formation and maintenance of a vapor pressure of said first, relatively volatile element in said closed space but insufficient to cause saturation of the resultant solution of said dissolved polycrystalline III-V compound by the compound formed by the reaction of the vapors of the relatively volatile first element with said relatively non-volatile second element present in said solution, (d) maintaining the resultant temperature differential between said first and second heating zones until most of said second, relatively non-volatile, element in which said molten polycrystalline III-V compound is dissolved is reacted with said relatively volatile, first element, (e) slowly increasing the temperature of second heating zone to bring the temperature of said relatively volatile first element to the melting point of said first element for a time sufficient to cause said first, relatively volatile, element to combine with the remainder of said second, relatively non-volatile element in which said III-V polycrystalline compound is dissolved, (f) increasing the temperature of said first heating zone to the melting point of said III-V compound, and (g) crystallizing said resultant liquid phase by decreasing the temperature profile of said liquid phase.

Claim 2

A method of manufacturing a semiconductor monocrystal of a III-V compound, which compound consists of a first, relatively volatile element, and a second, relatively non-volatile, element, said method comprising: (a) placing a quantity of a polycrystalline form of said III-V compound together with a significant amount of said second, relatively non-volatile element in a first portion of a closed space in a first heating zone of a furnace, (b) placing in a second portion of said closed space, and in a second heating zone of said furnace, a quantity of said first, relatively volatile element sufficiently in excess of the stoichiometric quantity thereof required to react with said amount of said second, relatively non-volatile element to provide a vapor pressure of said relatively volatile element, in said closed space, sufficiently large to counteract the dissociation of said III-V compound at a temperature approximately that of the melting point of said III-V compound, (c) raising the temperature of said first heating zone sufficiently to dissolve said polycrystalline semiconductor III-V compound in said second, relatively non-volatile element, but below the melting point of said III-V compound, heating while raising the temperature of said second heating zone to a point sufficiently high to cause the formation and maintenance of a vapor pressure of said first, relatively volatile element in said closed space but insufficient to cause saturation of the resultant solution of said dissolved polycrystalline III-V compound by the compound formed by the reaction of the vapors of the relatively volatile first element with said relatively non-volatile second element present in said solution, (d) maintaining the resultant temperature differential between said first and second heating zones until most of said second, relatively non-volatile, element in which said molten polycrystalline III-V compound is dissolved is reacted with said relatively volatile, first element, (e) slowly increasing the temperature of second heating zone to bring the temperature of said relatively volatile first element to the melting point of said first element for a time sufficient to cause said first, relatively volatile, element to combine with the remainder of said second, relatively non-volatile element in which said III-V polycrystalline compound is dissolved, (f) increasing the temperature of said first heating zone to the melting point of said III-V compound, and (g) crystallizing said resultant liquid phase by decreasing the temperature profile of said liquid phase.