US3877883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing single crystals of compounds
Assignee: RCA Corp
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Filing: 1973-07-13
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Granted: 1975-04-15
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Expires: 1993-07-13
Abstract
Abstract In growing a single crystal of a compound or an alloy composed of a plurality of compounds, having a volatile element, from a melt of the compound in a sealed ampoule, a quantity of the volatile element is provided to maintain an atmosphere of the volatile element over the melt and the temperature of the reservoir is slowly cycled around a given temperature, thereby cycling the vapor pressure of the volatile element of single crystal in the product.
Inventors
- 👤 Samuel Berkman
- 👤 Philip Michael Britt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:16
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B11/00; C30B11/003
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
176 words
IN A METHOD OF GROWING A SINGLE CRYSTAL OF A III-V COMPOUND, ONE ELEMENT OF WHICH IS RELATIVELY VOLATILE WITH RESPECT TO ANOTHER ELEMENT OF THE COMPOUND, BY MAINTAINING A SEED CRYSTAL OF THE COMPOUND IN CONTACT WITH A MELT OF THE COMPOUND WITHIN A SEALED CHAMBER DISPOSED WITHIN A FURNACE AND PROGRESSIVELY MOVING A HOT ZONE RELATIVE TO SAID SEED AND SAID MELT, AWAY FROM SAID SEED. AND IN WHICH A QUANTITY OF SAID RELATIVELY VOLATILE ELEMENT IS MAINTAINED WITHIN SAID SEALED CHAMBER ADJACENT SAID MELT BUT AT A LOWER MEAN TEMPERATURE THAN THAT OF SAID MELT SUCH THAT A PART OF SAID RELATIVELY VOLATILE ELEMENT BECOMES VAPORIZED AND SUCH THAT AN ATMOSPHERE OF SAID RELATIVELY VOLATILE ELEMENT IS MAINTAINED OVER SAID MELT, THE STEP OF CONTINUOUSLY CYCLING THE TEMPERATURE OF SAID QUANTITY OF SAID VOLATILE ELEMENT AFTER IT HAS BECOME VAPORIZED, AROUND SAID MEAND TEMPERATURE WITHIN A RANGE BETWEEN -1* TO +1*C AND -5* TO +5*C, THEREBY CYCLING THE PRESSURE OF SAID ATMOSPHERE, THE PERIOD OF SAID CYCLING BEING ABOUT 10 TO 30 MINUTES.
Claim 2
Dependent Claim
176 words
IN A METHOD OF GROWING A SINGLE CRYSTAL OF A III-V COMPOUND, ONE ELEMENT OF WHICH IS RELATIVELY VOLATILE WITH RESPECT TO ANOTHER ELEMENT OF THE COMPOUND, BY MAINTAINING A SEED CRYSTAL OF THE COMPOUND IN CONTACT WITH A MELT OF THE COMPOUND WITHIN A SEALED CHAMBER DISPOSED WITHIN A FURNACE AND PROGRESSIVELY MOVING A HOT ZONE RELATIVE TO SAID SEED AND SAID MELT, AWAY FROM SAID SEED. AND IN WHICH A QUANTITY OF SAID RELATIVELY VOLATILE ELEMENT IS MAINTAINED WITHIN SAID SEALED CHAMBER ADJACENT SAID MELT BUT AT A LOWER MEAN TEMPERATURE THAN THAT OF SAID MELT SUCH THAT A PART OF SAID RELATIVELY VOLATILE ELEMENT BECOMES VAPORIZED AND SUCH THAT AN ATMOSPHERE OF SAID RELATIVELY VOLATILE ELEMENT IS MAINTAINED OVER SAID MELT, THE STEP OF CONTINUOUSLY CYCLING THE TEMPERATURE OF SAID QUANTITY OF SAID VOLATILE ELEMENT AFTER IT HAS BECOME VAPORIZED, AROUND SAID MEAND TEMPERATURE WITHIN A RANGE BETWEEN -1* TO +1*C AND -5* TO +5*C, THEREBY CYCLING THE PRESSURE OF SAID ATMOSPHERE, THE PERIOD OF SAID CYCLING BEING ABOUT 10 TO 30 MINUTES.
Claim 3
Dependent Claim
13 words
A method according to claim 1 in which said compound is gallium arsenide.
Claim 4
Dependent Claim
19 words
A method according to claim 1 in which the single crystal is grown in a horizontal Bridgman type furnace.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-14 | 1978-10-14 | 1979-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-14 | 1982-10-14 | 1983-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-14 | 1986-10-14 | 1987-04-15 | $7700.00 | Window Closed / Lapsed |