US4172756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the accelerated growth from the gaseous phase of crystals, and products obtained in this manner
Assignee: US Philips Corp
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Filing: 1977-01-27
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Granted: 1979-10-30
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Expires: 1997-01-27
Abstract
Abstract A method of growing gallium arsenide crystals obtained by reaction of a first gaseous phase containing hydrogen and arsenic trichloride and a liquid gallium phase, in which the reaction forms a second gaseous phase from which gallium arsenide is deposited in such circumstances that the molar fraction of arsenic trichloride is larger than 2×10 -2 and is preferably between 2×10 -2 and 10 -1 .
Inventors
- 👤 Laszlo Hollan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/24; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
59 words
A method of growing gallium arsenide crystals, comprising the steps of reacting a first gaseous phase containing hydrogen and arsenic trichloride with a liquid phase of gallium, said reaction forming a second gaseous phase from which the gallium arsenide is deposited, wherein the molar fraction of arsenic trichloride in said first gaseous phase is higher than 2×10 -2 .
Claim 2
Independent Claim
59 words
A method of growing gallium arsenide crystals, comprising the steps of reacting a first gaseous phase containing hydrogen and arsenic trichloride with a liquid phase of gallium, said reaction forming a second gaseous phase from which the gallium arsenide is deposited, wherein the molar fraction of arsenic trichloride in said first gaseous phase is higher than 2×10 -2 .
Claim 3
Dependent Claim
25 words
A method as claimed in claim 1, wherein the molar fraction of arsenic trichloride in said first gaseous phase is lower than 10 -1 .
Claim 4
Dependent Claim
27 words
A method as in claim 2, wherein the molar fraction of arsenic trichloride in said first gaseous phase is chosen to be equal to 3×10 -2 .
Claim 5
Dependent Claim
12 words
A crystalline body obtained by using the method recited in claim 1.
Claim 6
Independent Claim
101 words
A method of manufacturing a semiconductor device comprising a monocrystalline substrate and monocrystalline layer of gallium arsenide, said layers being deposited by reacting a first gaseous phase containing hydrogen and arsenic trichloride with a liquid phase of gallium, said reaction forming a second gaseous phase from which the gallium arsenide is deposited, wherein the molar fraction of arsenic trichloride in said first gaseous phase is higher than 2×10 -2 and wherein the growth face of said monocrystalline substrate on which said layers are deposited is a face that makes an angle of 6° to 12° with the (1, 0, 0) face.
Claim 7
Independent Claim
101 words
A method of manufacturing a semiconductor device comprising a monocrystalline substrate and monocrystalline layer of gallium arsenide, said layers being deposited by reacting a first gaseous phase containing hydrogen and arsenic trichloride with a liquid phase of gallium, said reaction forming a second gaseous phase from which the gallium arsenide is deposited, wherein the molar fraction of arsenic trichloride in said first gaseous phase is higher than 2×10 -2 and wherein the growth face of said monocrystalline substrate on which said layers are deposited is a face that makes an angle of 6° to 12° with the (1, 0, 0) face.
Claim 8
Dependent Claim
12 words
A semiconductor device obtained by using the method recited in claim 5.
Claim 9
Dependent Claim
25 words
A method as claimed in claim 5, wherein the molar fraction of arsenic trichloride in said first gaseous phase is lower than 10 -1 .
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-29 | 1983-04-30 | 1983-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-29 | 1987-04-30 | 1987-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-29 | 1991-04-30 | 1991-10-30 | $7700.00 | Window Closed / Lapsed |