Patent US4526665A successfully refreshed from Google Patents.
US4526665A
Expired / Lapsed
US
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Method of depositing fully reacted titanium disilicide thin films
Assignee: AMI Semiconductor Inc
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Filing: 1984-08-20
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Granted: 1985-07-02
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Expires: 2004-08-20
Abstract
Abstract The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E s . A material is then sputtered on the substrate with a sputtering energy E k whereby the sum of E k and E s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.
Inventors
- 👤 Minas Tanielian
- 👤 Scott Blackstone
- 👤 Robert Lajos
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:25
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/541; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
85 words
A method of depositing a refractory metal on a surface of a silicon substrate to form a refractory metal silicide comprising the steps of: heating said surface of said substrate to increase the mobility on the surface of the substrate to an energy level E s ; and sputtering said substrate with a refractory metal having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for a refractory metal silicide to be formed.
Claim 2
Independent Claim
85 words
A method of depositing a refractory metal on a surface of a silicon substrate to form a refractory metal silicide comprising the steps of: heating said surface of said substrate to increase the mobility on the surface of the substrate to an energy level E s ; and sputtering said substrate with a refractory metal having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for a refractory metal silicide to be formed.
Claim 3
Dependent Claim
29 words
A method of depositing a refractory metal as recited in claim 1 wherein said substrate is heated to a temperature in the range of 450° C. to 650° C.
Claim 4
Dependent Claim
18 words
A method of depositing a refractory metal as recited in claim 2 wherein said refractory metal is titanium.
Claim 5
Dependent Claim
18 words
A method of depositing a refractory metal as recited in claim 1 wherein said refractory metal is titanium.
Claim 6
Dependent Claim
18 words
A method of depositing a refractory metal as recited in claim 1 wherein said refractory metal is tantalum.
Claim 7
Dependent Claim
18 words
A method of depositing a refractory metal as recited in claim 2 wherein said refractory metal is tantalum.
Claim 8
Dependent Claim
18 words
A method of depositing a refractory metal as recited in claim 1 wherein said refractory metal is molybdenum.
Claim 9
Dependent Claim
18 words
A method of depositing a refractory metal as recited in claim 2 wherein said refractory metal is molybdenum.
Claim 10
Dependent Claim
63 words
A method of depositing a refractory metal as recited in claim 1 wherein said heating of said surface of said substrate further comprises: forming a resistor on one side of said substrate; and passing a current through said resistor to cause said substrate to be heated so that said surface of said substrate can be subjected to said sputtering of said refractory metal.
Claim 11
Dependent Claim
17 words
A method of depositing a refractory metal as recited in claim 9 wherein said metal is titanium.
Claim 12
Dependent Claim
44 words
A method of depositing a refractory metal as recited in claim 10 wherein said resistor is a thin-film resistor and said current to said resistor is sufficient to heat said surface of said substrate to a temperature range of 450° C. to 650° C.
Claim 13
Dependent Claim
33 words
A method of depositing a refractory metal as recited in claim 1 wherein said heating step further comprises: directing a high-intensity light source onto said substrate to cause said substrate to be heated.
Claim 14
Dependent Claim
36 words
A method of depositing a refractory metal as recited in claim 12 wherein said refractory metal is titanium and said surface of said substrate is heated to a temperature range of 450° C. to 650° C.
Claim 15
Dependent Claim
43 words
A method of depositing a refractory metal as recited in claim 1 wherein said heating step further comprises: flowing a high-temperature inert gas on a surface of said substrate opposite said surface to which said refractory metal is sputtered to heat said substrate.
Claim 16
Independent Claim
77 words
A method of depositing a combination of a refractory metal and silicon on a substrate comprising the steps of: heating said substrate to increase the mobility of said substrate surface to an energy level E s ; sputtering said substrate with said refractory metal and said silicon having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for a refractory metal silicide to be formed.
Claim 17
Independent Claim
77 words
A method of depositing a combination of a refractory metal and silicon on a substrate comprising the steps of: heating said substrate to increase the mobility of said substrate surface to an energy level E s ; sputtering said substrate with said refractory metal and said silicon having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for a refractory metal silicide to be formed.
Claim 18
Dependent Claim
41 words
A method of depositing a combination of a refractory metal and silicon as recited in claim 15 wherein said sputtering step further comprises: co-sputtering said substrate with separate targets, one target being said silicon and another target being said refractory metal.
Claim 19
Dependent Claim
23 words
A method of depositing a combination of a refractory metal and silicon as recited in claim 16 wherein said refractory metal is titanium.
Claim 20
Dependent Claim
39 words
A method of depositing a combination of a refractory metal and silicon as recited in claim 15 wherein said sputtering step further comprises: sputtering said substrate with a composite target of a mixture of silicon and a refractory metal.
Claim 21
Dependent Claim
23 words
A method of depositing a combination of a refractory metal and silicon as recited in claim 18 wherein said refractory metal is titanium.
Claim 22
Independent Claim
88 words
A method of depositing a material on a surface of a substrate comprising the steps of: heating said substrate to increase the mobility of said substrate surface to an energy level E s ; and sputtering in the presence of a reactive gas said substrate with said material, said material having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for a chemical reaction to occur on said surface of said substrate and said sputtered material.
Claim 23
Independent Claim
88 words
A method of depositing a material on a surface of a substrate comprising the steps of: heating said substrate to increase the mobility of said substrate surface to an energy level E s ; and sputtering in the presence of a reactive gas said substrate with said material, said material having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for a chemical reaction to occur on said surface of said substrate and said sputtered material.
Claim 24
Dependent Claim
31 words
A method of depositing a material as recited in claim 20 wherein said material is silicon, said reactive gas is oxygen, and said substrate is silicon to form SiO 2 .
Claim 25
Dependent Claim
31 words
A method of depositing a material as recited in claim 20 wherein said material is a metal and said reactive gas is oxygen to form a metal oxide on said substrate.
Claim 26
Dependent Claim
30 words
A method of depositing a material as recited in claim 20 wherein said material is silicon, said reactive gas is nitrogen, and said substrate is silicon to form silicon nitride.
Claim 27
Dependent Claim
31 words
A method of depositing a material as recited in claim 20 wherein said material is a metal and said reactive gas is nitrogen to form a metal nitride on said substrate.
Claim 28
Independent Claim
80 words
A method of depositing a silicon layer on a surface of a silicon substrate to form an epitaxial layer of silicon comprising the steps of: heating said substrate to increase the mobility of the substrate surface to an energy level E s ; and sputtering said substrate with silicon having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for an epitaxial layer of silicon to be formed.
Claim 29
Independent Claim
80 words
A method of depositing a silicon layer on a surface of a silicon substrate to form an epitaxial layer of silicon comprising the steps of: heating said substrate to increase the mobility of the substrate surface to an energy level E s ; and sputtering said substrate with silicon having a kinetic energy E k whereby the sum of E k and E s is greater than the activation energy required for an epitaxial layer of silicon to be formed.
Claim 30
Independent Claim
115 words
A method of depositing a refractory metal on a source gate and drain region of a field effect transistor fabricated on a silicon substrate to form a self-aligned MOS transistor comprising the steps of: sputtering said source gate and drain regions with said refractory metal having a kinetic energy E k ; and heating said substrate to increase the mobility of said sputtered material on the outer surface of said source, gate and drain regions to an energy level E s whereby the sum of E k and E s is greater than the activation energy required for a refractory metal silicide to be formed on the surface of said source, gate and drain regions.
Claim 31
Independent Claim
115 words
A method of depositing a refractory metal on a source gate and drain region of a field effect transistor fabricated on a silicon substrate to form a self-aligned MOS transistor comprising the steps of: sputtering said source gate and drain regions with said refractory metal having a kinetic energy E k ; and heating said substrate to increase the mobility of said sputtered material on the outer surface of said source, gate and drain regions to an energy level E s whereby the sum of E k and E s is greater than the activation energy required for a refractory metal silicide to be formed on the surface of said source, gate and drain regions.
References Cited (Backward Citations)
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US4468308A
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US4466875A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-01 | 1988-12-31 | 1989-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-01 | 1992-12-31 | 1993-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-01 | 1996-12-31 | 1997-07-02 | $7700.00 | Window Closed / Lapsed |