Patent US4524508A successfully refreshed from Google Patents.
US4524508A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1983-07-29
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Granted: 1985-06-25
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Expires: 2003-07-29
Abstract
Abstract A method of manufacturing a semiconductor device comprises forming a mask of a predetermined pattern on a first conductive layer (3) deposited over a semiconductor substrate (1) and etching physically first conductive layer so that the side surfaces thereof are substantially perpendicular to a surface of the semiconductor substrate. After removing the mask on the pattern, a first insulating layer (7) is deposited over the whole upper surface of the semiconductor substrate including the first conductive layer. A physical etching is made over the first insulating layer until the surface of the semiconductor substrate is exposed, so that a portion (7a) of the first insulating layer (7) is left in a stepped portion of the side surfaces of the first conductive layer. Then, a second insulating layer (5) is formed over a whole upper surface of the semiconductor substrate including the portion (7a) of the insulating layer and the first conductive layer. Subsequently, a second conductive layer (6) is formed over the whole upper surface thereof.
Inventors
- 👤 Shinichi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:42
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10P; H10P50/00; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
198 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first conductive layer (3) over a semiconductor substrate (1), masking a predetermined pattern on said first conductive layer (3) and then physically etching said first conductive layer (3) to provide side surfaces of said predetermined pattern substantially perpendicular to the surface of the said semiconductor substrate (1), forming a first insulating layer (7) over the surface of said semiconductor substrate (1) and directly on said first conductive layer (3) after removal of the mask on said predetermined pattern, physically etching said first insulating layer (7) until said first conductive layer is exposed in said first insulating layer (7) formed over said semiconductor substrate (1), so that a portion of said first insulating layer (7a) is left in a stepped portion at the side surfaces of said first conductive layer (3), forming a second insulating layer (5) over the surface of said semiconductor substrate (1) and on said left portion of said first insulating layer (7a) and on said first conductive layer (3) etched to the predetermined pattern, and forming a second conductive layer (6) over a whole upper surface of said second insulating layer (5).
Claim 2
Independent Claim
198 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first conductive layer (3) over a semiconductor substrate (1), masking a predetermined pattern on said first conductive layer (3) and then physically etching said first conductive layer (3) to provide side surfaces of said predetermined pattern substantially perpendicular to the surface of the said semiconductor substrate (1), forming a first insulating layer (7) over the surface of said semiconductor substrate (1) and directly on said first conductive layer (3) after removal of the mask on said predetermined pattern, physically etching said first insulating layer (7) until said first conductive layer is exposed in said first insulating layer (7) formed over said semiconductor substrate (1), so that a portion of said first insulating layer (7a) is left in a stepped portion at the side surfaces of said first conductive layer (3), forming a second insulating layer (5) over the surface of said semiconductor substrate (1) and on said left portion of said first insulating layer (7a) and on said first conductive layer (3) etched to the predetermined pattern, and forming a second conductive layer (6) over a whole upper surface of said second insulating layer (5).
Claim 3
Dependent Claim
19 words
A method of manufacturing a semiconductor device in accordance with claim 1, wherein said first conductive layer comprises metal.
Claim 4
Dependent Claim
21 words
A method of manufacturing a semiconductor device in accordance with claim 1, wherein said first conductive layer comprises a polycrystal silicon.
Claim 5
Dependent Claim
44 words
A method of manufacturing a semiconductor device as recited in claim 1 wherein said step of forming said first insulating layer comprises the further step of forming said first insulating layer to a thickness approximately equal to the thickness of said first conductive layer.
Claim 6
Dependent Claim
31 words
A method of manufacturing a semiconductor device as recited in claim 4 wherein said first conductive layer and said first insulating layer are formed to be approximately 0.5 μm in thickness.
Claim 7
Independent Claim
178 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first conductive layer on a surface of a semiconductor substrate having an insulating film thereover, masking a predetermined pattern on said first conductive layer and then physically etching said first conductive layer to provide side surfaces of said predetermined pattern substantially perpendicular to the surface of the said semiconductor substrate, forming a first insulating layer over the insulating film surface and directly over said first conductive layer after removal of the mask on said predetermined pattern, physically etching said first insulating layer until said insulating film and said first conductive layer are exposed, so that a portion of said first insulating layer is left in a stepped portion at the side surfaces of said first conductive layer, forming a second insulating layer over the insulating film on said semiconductor substrate and over said left portion of said first insulating layer and said first conductive layer etched to the predetermined pattern, and forming a second conductive layer over the upper surface of said second insulating layer.
Claim 8
Independent Claim
178 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first conductive layer on a surface of a semiconductor substrate having an insulating film thereover, masking a predetermined pattern on said first conductive layer and then physically etching said first conductive layer to provide side surfaces of said predetermined pattern substantially perpendicular to the surface of the said semiconductor substrate, forming a first insulating layer over the insulating film surface and directly over said first conductive layer after removal of the mask on said predetermined pattern, physically etching said first insulating layer until said insulating film and said first conductive layer are exposed, so that a portion of said first insulating layer is left in a stepped portion at the side surfaces of said first conductive layer, forming a second insulating layer over the insulating film on said semiconductor substrate and over said left portion of said first insulating layer and said first conductive layer etched to the predetermined pattern, and forming a second conductive layer over the upper surface of said second insulating layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-24 | 1988-12-24 | 1989-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-24 | 1992-12-24 | 1993-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-24 | 1996-12-24 | 1997-06-25 | $7700.00 | Window Closed / Lapsed |