Patent US4515876A successfully refreshed from Google Patents.
US4515876A
Expired / Lapsed
US
⏱️ 0.0 years remaining
X-Ray lithography mask and method for fabricating the same
Assignee: NTT Inc
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Filing: 1983-07-15
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Granted: 1985-05-07
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Expires: 2003-07-15
Abstract
Abstract An X-ray absorber layer in the form of single layer of high melting point metal such as Ta, W is formed with granular crystal grains on a mask substrate, so that an internal stress of the layer is reduced. A fine pattern is formed from the absorber layer by reactive sputter etching using CBrF 3 gas as an etchant, so that an X-ray absorber pattern is formed on the mask substrate. The X-ray lithography mask thus fabricated has a fine pattern such as submicron pattern with a high degree of pattern contrast and a high dimensional accuracy.
Inventors
- 👤 Hideo Yoshihara
- 👤 Akira Ozawa
- 👤 Misao Sekimoto
- 👤 Toshiro Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:22
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22; Y; Y10; Y10S; Y10S430/00; Y10S430/167
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
78 words
An X-ray lithography mask comprising: a mask substrate; and an X-ray absorber layer in the form of a single layer consisting entirely of granular crystal grains of a high melting point metal, said X-ray absorber layer being deposited directly on said mask substrate, said granular crystal grains being arranged in the direction of the thickness of said layer and causing said layer to have a substantially zero internal stress, and said X-ray absorber layer having a desired pattern.
Claim 2
Dependent Claim
78 words
An X-ray lithography mask comprising: a mask substrate; and an X-ray absorber layer in the form of a single layer consisting entirely of granular crystal grains of a high melting point metal, said X-ray absorber layer being deposited directly on said mask substrate, said granular crystal grains being arranged in the direction of the thickness of said layer and causing said layer to have a substantially zero internal stress, and said X-ray absorber layer having a desired pattern.
Claim 3
Dependent Claim
36 words
An X-ray lithography mask as claimed in claim 1, wherein (211) and (110) planes of said high melting point metal coexist in said single layer and are in parallel with the surface of said mask substrate.
Claim 4
Dependent Claim
21 words
An X-ray lithography mask as claimed in claim 2, wherein an electron absorber layer is disposed on said X-ray absorber layer.
Claim 5
Dependent Claim
19 words
An X-ray lithography mask as claimed in claim 2, wherein said high melting point metal is tantalum or tungsten.
Claim 6
Dependent Claim
23 words
An X-ray lithography mask as claimed in claim 3, wherein said electron absorber layer consists of silicon oxide, silicon nitride or a polymer.
Claim 7
Dependent Claim
37 words
An X-ray lithography mask as claimed in claim 2, wherein said mask substrate consists of a substance selected from the group consisting of SiN, Si 3 N 4 , SiC, BN, polyimide, Mylar and a combination thereof.
Claim 8
Independent Claim
222 words
A method for fabricating an X-ray lithography mask, comprising a first step which includes placing a specimen having an X-ray mask substrate on a specimen table in a sputtering apparatus having means for supplying a rare gas and means for controlling the pressure of the rare gas so that the specimen is electrically insulated from ground potential so that said specimen is electrically floating with respect to ground potential; a second step which includes forming a layer of a metal having a high melting point directly on said X-ray mask substrate in said apparatus while subjecting said specimen to an RF power field and exposing said specimen to the rare gas and maintaining the flow rate and pressure of the rare gas at values selected to cause the layer of high melting point metal to contain granular crystal grains in the direction of the thickness of that layer, the granular crystal grains causing the layer to have a substantially zero internal stress, said step of forming including controlling the RF power field and the pressure of the rare gas for maintaining the surface of said specimen at a floating potential in the range of -10 to -20 V; and a third step of forming an X-ray absorber layer with a predetermined pattern from said high melting point metal by reactive sputter etching.
Claim 9
Independent Claim
222 words
A method for fabricating an X-ray lithography mask, comprising a first step which includes placing a specimen having an X-ray mask substrate on a specimen table in a sputtering apparatus having means for supplying a rare gas and means for controlling the pressure of the rare gas so that the specimen is electrically insulated from ground potential so that said specimen is electrically floating with respect to ground potential; a second step which includes forming a layer of a metal having a high melting point directly on said X-ray mask substrate in said apparatus while subjecting said specimen to an RF power field and exposing said specimen to the rare gas and maintaining the flow rate and pressure of the rare gas at values selected to cause the layer of high melting point metal to contain granular crystal grains in the direction of the thickness of that layer, the granular crystal grains causing the layer to have a substantially zero internal stress, said step of forming including controlling the RF power field and the pressure of the rare gas for maintaining the surface of said specimen at a floating potential in the range of -10 to -20 V; and a third step of forming an X-ray absorber layer with a predetermined pattern from said high melting point metal by reactive sputter etching.
Claim 10
Dependent Claim
23 words
A method for fabricating an X-ray lithography mask as claimed in claim 7, wherein said high melting point metal is tantalum or tungsten.
Claim 11
Dependent Claim
71 words
A method for fabricating an X-ray lithography mask as claimed in claim 8, wherein said third step includes: a first sub-step of forming a resist pattern on said high melting point layer of tantalum or tungsten; and a second sub-step of forming said X-ray absorber layer with said desired pattern by the reactive sputter etching using CBrF 3 gas as an etchant, with said resist pattern being used as a mask.
Claim 12
Dependent Claim
136 words
A method for fabricating an X-ray lithography mask as claimed in claim 8, wherein said third step includes: a first sub-step of forming a silicon oxide or silicon nitride layer on the surface of said high melting point layer of tantalum or tungsten; a second sub-step of forming a resist pattern on the surface of said silicon oxide or silicon nitride layer; a third sub-step of forming a silicon oxide or silicon nitride pattern layer from said silicon oxide or silicon nitride layer by reactive sputter etching, with said resist pattern being used as a mask; and a fourth sub-step of forming said X-ray absorber layer with said desired pattern by the reactive sputter etching using CBrF 3 gas as an etchant, with said silicon oxide or silicon nitride pattern layer being used as a mask.
Claim 13
Dependent Claim
156 words
A method for fabricating an X-ray lithography mask as claimed in claim 8, wherein said third step includes: a first sub-step of applying a layer of a polymer having a high degree of resistance against dry etching on the surface of said high melting point layer of tantalum or tungsten; a second sub-step of forming a resist pattern on the surface of said layer of the polymer; a third sub-step of depositing a titanium or chrominum layer on said resist pattern; a fourth sub-step of forming a titanium or chrominum pattern by lift-off process; a fifth sub-step of forming a polymer pattern by reactive sputter etching in the atmosphere of oxygen, with said titanium or chrominum pattern being used as a mask; and a sixth sub-step of forming said X-ray absorber layer with said desired pattern by the reactive sputter etching using CBrF3 gas as an etchant, with said polymer pattern being used as a mask.
Claim 14
Dependent Claim
28 words
A method for fabricating an X-ray lithography mask as claimed in claim 7, wherein said rare gas is selected from the group consisting of xenon, argon and krypton.
Claim 15
Independent Claim
185 words
A method for fabricating an X-ray lithography mask, comprising a first step which includes placing a specimen having an X-ray mask substrate on a specimen table in a sputtering apparatus having means for supplying a rare gas and means for controlling the pressure of the rare gas so that the specimen is electrically insulated from ground potential, and applying a DC bias voltage within a range of -10 to -20 V to said specimen; a second step which includes forming a layer of a metal having a high melting point directly on said X-ray mask substrate in said apparatus by RF sputtering while exposing said specimen to the rare gas and maintaining the flow rate and pressure of the rare gas at values selected to cause the layer of high melting point metal to contain granular crystal grains in the direction of the thickness of that layer, the granular crystal grains causing the layer to have a substantially zero internal stress; and a third step of forming an X-ray absorber layer with a predetermined pattern from said high melting point metal by reactive sputter etching.
Claim 16
Independent Claim
185 words
A method for fabricating an X-ray lithography mask, comprising a first step which includes placing a specimen having an X-ray mask substrate on a specimen table in a sputtering apparatus having means for supplying a rare gas and means for controlling the pressure of the rare gas so that the specimen is electrically insulated from ground potential, and applying a DC bias voltage within a range of -10 to -20 V to said specimen; a second step which includes forming a layer of a metal having a high melting point directly on said X-ray mask substrate in said apparatus by RF sputtering while exposing said specimen to the rare gas and maintaining the flow rate and pressure of the rare gas at values selected to cause the layer of high melting point metal to contain granular crystal grains in the direction of the thickness of that layer, the granular crystal grains causing the layer to have a substantially zero internal stress; and a third step of forming an X-ray absorber layer with a predetermined pattern from said high melting point metal by reactive sputter etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-06 | 1988-11-05 | 1989-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-06 | 1992-11-05 | 1993-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-06 | 1996-11-05 | 1997-05-07 | $7700.00 | Window Closed / Lapsed |