US4468799A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation lithography mask and method of manufacturing same
Assignee: US Philips Corp
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Filing: 1982-04-29
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Granted: 1984-08-28
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Expires: 2002-04-29
Abstract
Abstract The manufacture of semiconductor systems by means of radiation lithography requires low-stress masks when it is important to achieve very fine structures. In accordance with the invention, such a mask comprises a carrier of boron-doped silicon, a radiation absorbing pattern consisting of a double layer of different metals, such as molybdenum and tungsten, or a double layer of layers of the same metal, such as molybdenum, which are deposited in a different manner.
Inventors
- 👤 Margret Harms
- 👤 Holger Luthje
- 👤 Bernd Matthiessen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:45
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
90 words
A radiation lithography mask comprising: a silicon carrier structure having an opening therethrough, a boron-silicon layer overlying said silicon carrier and covering said opening at a major surface of said carrier, and a radiation absorbing layer provided at said major surface over said boron-silicon layer, wherein said radiation absorbing layer is an internally stress-compensated double layer of two different metals, and wherein a further stress-compensating layer of titanium or titanium oxide is provided on at least one side of said boron-silicon layer, said further layer being substantially transparent to radiation.
Claim 2
Dependent Claim
90 words
A radiation lithography mask comprising: a silicon carrier structure having an opening therethrough, a boron-silicon layer overlying said silicon carrier and covering said opening at a major surface of said carrier, and a radiation absorbing layer provided at said major surface over said boron-silicon layer, wherein said radiation absorbing layer is an internally stress-compensated double layer of two different metals, and wherein a further stress-compensating layer of titanium or titanium oxide is provided on at least one side of said boron-silicon layer, said further layer being substantially transparent to radiation.
Claim 3
Dependent Claim
17 words
A radiation lithography mask according to claim 1, wherein said two different metals are tungsten and molybdenum.
Claim 4
Dependent Claim
98 words
A radiation lithography mask comprising: a silicon carrier structure having an opening therethrough, a boron-silicon layer overlying said silicon carrier and covering said opening at a major surface of said carrier, and a radiation absorbing layer provided at said major surface over said boron-silicon layer, wherein said radiation absorbing layer is an internally stress-compensated double layer of molybdenum, each of said molybdenum layers applied in a different manner, and wherein a further stress-compensating layer of titanium or titanium oxide is provided on at least one side of said boron-silicon layer, said further layer being substantially transparent to radiation.
Claim 5
Dependent Claim
98 words
A radiation lithography mask comprising: a silicon carrier structure having an opening therethrough, a boron-silicon layer overlying said silicon carrier and covering said opening at a major surface of said carrier, and a radiation absorbing layer provided at said major surface over said boron-silicon layer, wherein said radiation absorbing layer is an internally stress-compensated double layer of molybdenum, each of said molybdenum layers applied in a different manner, and wherein a further stress-compensating layer of titanium or titanium oxide is provided on at least one side of said boron-silicon layer, said further layer being substantially transparent to radiation.
Claim 6
Dependent Claim
33 words
A radiation lithography mask according to claim 3, wherein each of said molybdenum layers is applied by cathode sputtering with a variation of cathode voltage and carrier voltage for each different molybdenum layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-28 | 1988-02-27 | 1988-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-28 | 1992-02-27 | 1992-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-28 | 1996-02-27 | 1996-08-28 | $7700.00 | Window Closed / Lapsed |