US4507157A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Simultaneously doped light-emitting diode formed by liquid phase epitaxy
Assignee: General Electric Co
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Filing: 1984-02-09
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Granted: 1985-03-26
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Expires: 2004-02-09
Abstract
Abstract A light emitting diode and a method for the manufacture thereof is described. The diode may be formed by liquid phase epitaxial growth from a single melt including p and n conductivity type dopants. The p conductivity type layer grows first followed by the n conductivity layer.
Inventors
- 👤 James D. Oliver, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P14/26; H10P14/263; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919; Y10S438/925
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
150 words
A method for making a gallium arsenide semiconductor light emitting diode, comprising (a) providing a p-conductivity type substrate; (b) providing a gallium arsenide melt including germanium for establishing p-conductivity and having a distribution co-efficient which increases with increasing temperature and tellurium for establishing n-conductivity and having a distribution co-efficient which decreases with increasing temperature; (c) adjusting the concentration of germanium and tellurium in said melt; (d) heating said substrate and said melt to a temperature in excess of 860° C.; (e) contacting said substrate and said melt; and (f) decreasing said temperature at a controlled rate to below 400° C., to epitaxially grow an initial p-conductivity type layer of a desired thickness on said substrate in accordance with the concentration of germanium in said melt and a subsequent n-conductivity type layer of a desired thickness on said p-conductivity type layer in accordance with the concentration of tellurium in said melt.
Claim 2
Independent Claim
150 words
A method for making a gallium arsenide semiconductor light emitting diode, comprising (a) providing a p-conductivity type substrate; (b) providing a gallium arsenide melt including germanium for establishing p-conductivity and having a distribution co-efficient which increases with increasing temperature and tellurium for establishing n-conductivity and having a distribution co-efficient which decreases with increasing temperature; (c) adjusting the concentration of germanium and tellurium in said melt; (d) heating said substrate and said melt to a temperature in excess of 860° C.; (e) contacting said substrate and said melt; and (f) decreasing said temperature at a controlled rate to below 400° C., to epitaxially grow an initial p-conductivity type layer of a desired thickness on said substrate in accordance with the concentration of germanium in said melt and a subsequent n-conductivity type layer of a desired thickness on said p-conductivity type layer in accordance with the concentration of tellurium in said melt.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-25 | 1988-09-24 | 1989-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-25 | 1992-09-24 | 1993-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-25 | 1996-09-24 | 1997-03-26 | $7700.00 | Window Closed / Lapsed |