Abstract Disclosure is made of a method for producing a semiconductor array of light-emitting elements, whereby a mask is first applied onto an n-layer of an epitaxial structure consisting of a substrate GaAs of the p + -type of conductivity with layers Ga 1-x AlxAs of the p-type and Ga 1-y AlyAs of the n-type applied successively onto it, which layers form a light-emitting p-n junction. The mask is produced by applying a photoresist layer onto the n-layer with subsequent exposure and etching. This is followed by introducing into the n-type layer, through said mask, an acceptor addition by means of ion implantation. After this the photoresist layer is removed, and a layer of SiO 2 is applied onto the uncovered n-layer. After this diffusion heat treatment is carried out for a time and at a temperature sufficient to produce in the n-layer regions of the p-type of conductivity whose depth is at least equal to the thickness of the n-layer.
A method for producing a semiconductor array of light-emitting elements using an epitaxial structure consisting of a substrate GaAs of the p +-type of conductivity with layers of Ga 1-x Al x As of the p-type and Ga 1-y Al y As of the n-type of conductivity applied successively onto it, said layers forming a light-emitting p-n junction, comprising the steps of producing at first a photoresist mask on said n-type layer of said epitaxial structure, said mask protecting portions of said n-type layer which correspond to a required configuration and size of said light-emitting elements; introducing next an acceptor addition through said mask and said n-type layer by means of ion implantation, removing said photoresist mask; applying onto the uncovered n-type layer a layer of SiO 2 ; diffusion heating next for a time and at a temperature sufficient to produce in the n-type layer, under portions that were not protected by said mask, p-type areas whose depth is equal to at least the thickness of said n-type layer.
Claim 2
Independent Claim
170 words
A method for producing a semiconductor array of light-emitting elements using an epitaxial structure consisting of a substrate GaAs of the p +-type of conductivity with layers of Ga 1-x Al x As of the p-type and Ga 1-y Al y As of the n-type of conductivity applied successively onto it, said layers forming a light-emitting p-n junction, comprising the steps of producing at first a photoresist mask on said n-type layer of said epitaxial structure, said mask protecting portions of said n-type layer which correspond to a required configuration and size of said light-emitting elements; introducing next an acceptor addition through said mask and said n-type layer by means of ion implantation, removing said photoresist mask; applying onto the uncovered n-type layer a layer of SiO 2 ; diffusion heating next for a time and at a temperature sufficient to produce in the n-type layer, under portions that were not protected by said mask, p-type areas whose depth is equal to at least the thickness of said n-type layer.