Patent UST938009I4 successfully refreshed from Google Patents.
US3755013A
Expired / Lapsed
US
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Liquid solution method of epitaxially depositing a semiconductor compound
Assignee: US Philips Corp
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Filing: 1971-04-01
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Granted: 1973-08-28
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Expires: 1991-04-01
Abstract
Abstract The invention relates to a method of epitaxially depositing a semiconductor compound from a saturated solution on a substrate. The temperature at the interface substrate-saturated solution is equal to the temperature at which the saturated solution is prepared in a part of the reactor situated above the substrate by leading vapour of a component of the compound over another component of the compound which serves as a solvent.
Inventors
- 👤 L Hollan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:05
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/12; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
33 words
A method as claimed in claim 1, wherein said interrupting step includes the inclining of said substrate to drain off all the remaining part of said solution from the surface of said substrate.
Claim 2
Dependent Claim
26 words
A method as claimed in claim 1, wherein said temperature gradient of said second zone is chosen to be between 10* and 20* C per cm.
Claim 3
Dependent Claim
32 words
A method as claimed in claim 1, wherein the temperature in said first zone is 800*C and gallium-arsenide is deposited onto a substrate of gallium-arsenide and said solution is gallium-arsenide in gallium.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 4, wherein said solution is prepared by leading a flow of arsenic trichloride in hydrogen.
Claim 5
Dependent Claim
24 words
A method as claimed in claim 1 wherein said substrate is etched by a flow of a reactive vapor immediately preceding the flooding step.
Claim 6
Dependent Claim
48 words
A method as claimed in claim 1, wherein the volume of said solution used is chosen in accordance with a minimum thickness of the liquid phase on the surface on which the deposition is carried out, said thickness nevertheless being large enough to obtain a flat liquid surface.
Claim 7
Dependent Claim
25 words
A method as claimed in claim 1, wherein said temperature gradient of said second zone is chosen to be between 5* and 50*C per cm.
Claim 8
Dependent Claim
22 words
A method as claimed in claim 2, wherein after the inclining of said substrate, said substrate is transferred to a vertical position.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-27 | 1977-02-26 | 1977-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-27 | 1981-02-26 | 1981-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-27 | 1985-02-26 | 1985-08-28 | $7700.00 | Window Closed / Lapsed |