US4500367A
Expired / Lapsed
US
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LPE Growth on group III-V compound semiconductor substrates containing phosphorus
Assignee: Nokia Bell Labs
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Filing: 1983-10-31
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Granted: 1985-02-19
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Expires: 2003-10-31
Abstract
Abstract Liquid phase epitaxy (LPE) growth of a Group III-V semiconductor compound layer upon a Group III-V semiconductor compound substrate containing phosphorus is accomplished in a graphite meltholder by heating the substrate in an atmosphere of nitrogen or helium and contacting the substrate with a liquid melt, capable of growing the layer, in an atmosphere of hydrogen.
Inventors
- 👤 Vassilis G. Keramidas
- 👤 Jose A. Lourenco
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:22
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B19/00; C30B19/02; C30B19/04; C30B19/12; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; Y; Y10; Y10S; Y10S117/00; Y10S117/906
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
105 words
A method for liquid phase epitaxially growing, upon a first Group III-V semiconductor compound substrate containing phosphorus, a layer of a second Group III-V semiconductor compound comprising the steps of: (a) heating in a first gas atmosphere comprising nitrogen or helium to a first predetermined temperature both the substrate and a molten solution from which the second compound can be grown; (b) contacting the substrate with the molten solution in a second gas atmosphere comprising hydrogen; and (c) cooling the substrate and the molten solution in the second atmosphere at a predetermined rate, whereby the layer of the second compound epitaxially grows upon the substrate.
Claim 2
Independent Claim
105 words
A method for liquid phase epitaxially growing, upon a first Group III-V semiconductor compound substrate containing phosphorus, a layer of a second Group III-V semiconductor compound comprising the steps of: (a) heating in a first gas atmosphere comprising nitrogen or helium to a first predetermined temperature both the substrate and a molten solution from which the second compound can be grown; (b) contacting the substrate with the molten solution in a second gas atmosphere comprising hydrogen; and (c) cooling the substrate and the molten solution in the second atmosphere at a predetermined rate, whereby the layer of the second compound epitaxially grows upon the substrate.
Claim 3
Dependent Claim
35 words
The method of claim 1 in which the molten solution is located in a well and the substrate in a sliding member, whereby the second atmosphere prevents adhesion of the well to the sliding member.
Claim 4
Dependent Claim
14 words
The method of claim 2 in which the surface of the well comprises graphite.
Claim 5
Dependent Claim
25 words
The method of claim 1 in which the first atmosphere is essentially nitrogen and the substrate is covered with an InP cover during step (a).
Claim 6
Dependent Claim
27 words
The method of claim 1 in which the first atmosphere is essentially helium and in which the substrate is covered with an InP cover during step (a).
Claim 7
Independent Claim
125 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon an InP crystal substrate comprising the steps of: (a) heating both the substrate and the material, in an atmosphere of essentially nitrogen, in a furnace at a predetermined temperature for a predetermined amount of time, the substrate being covered with an InP cover and being situated in a recess of a graphite sliding member, the material being contained in a graphite well; (b) changing the atmosphere essentially to hydrogen; and (c) bringing the substrate, situated in the sliding member, into contact with a melt of composition suitable for the epitaxial growth of the layer; and (d) cooling the furnace at a predetermined rate, whereby the epitaxial growth of the layer results.
Claim 8
Independent Claim
125 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon an InP crystal substrate comprising the steps of: (a) heating both the substrate and the material, in an atmosphere of essentially nitrogen, in a furnace at a predetermined temperature for a predetermined amount of time, the substrate being covered with an InP cover and being situated in a recess of a graphite sliding member, the material being contained in a graphite well; (b) changing the atmosphere essentially to hydrogen; and (c) bringing the substrate, situated in the sliding member, into contact with a melt of composition suitable for the epitaxial growth of the layer; and (d) cooling the furnace at a predetermined rate, whereby the epitaxial growth of the layer results.
Claim 9
Independent Claim
108 words
A method of liquid phase epitaxial growth of an epitaxial layer upon an InP crystal substrate comprising the steps of: (a) heating the substrate, while covered with an InP cover, in an atmosphere of essentially nitrogen, at a predetermined temperature for a predetermined amount of time, the substrate being situated in a recess of a graphite sliding member; (b) changing the atmosphere essentially to hydrogen; (c) pushing the substrate, while situated in the sliding member, into contact with a melt having a composition suitable for the epitaxial growth of the layer; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
Claim 10
Independent Claim
108 words
A method of liquid phase epitaxial growth of an epitaxial layer upon an InP crystal substrate comprising the steps of: (a) heating the substrate, while covered with an InP cover, in an atmosphere of essentially nitrogen, at a predetermined temperature for a predetermined amount of time, the substrate being situated in a recess of a graphite sliding member; (b) changing the atmosphere essentially to hydrogen; (c) pushing the substrate, while situated in the sliding member, into contact with a melt having a composition suitable for the epitaxial growth of the layer; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
Claim 11
Independent Claim
112 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of nitrogen; (b) pushing the sliding member so that the substrate comes into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere to hydrogen substantially immediately before pushing the substrate into contact with the melt; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
Claim 12
Independent Claim
112 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of nitrogen; (b) pushing the sliding member so that the substrate comes into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere to hydrogen substantially immediately before pushing the substrate into contact with the melt; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
Claim 13
Independent Claim
85 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of nitrogen; (b) pushing the sliding member so that the substrate comes into contact with a melt; and (c) changing the atmosphere to hydrogen substantially immediately after pushing the substrate into contact with the melt.
Claim 14
Independent Claim
85 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of nitrogen; (b) pushing the sliding member so that the substrate comes into contact with a melt; and (c) changing the atmosphere to hydrogen substantially immediately after pushing the substrate into contact with the melt.
Claim 15
Independent Claim
109 words
A method of liquid phase epitaxial growth of an epitaxial layer upon an InP crystal substrate comprising the steps of: (a) heating the substrate, while covered with an InP cover, in an atmosphere of essentially helium, at a predetermined temperature for a predetermined amount of time, the substrate being situated in a recess of a graphite sliding member; (b) changing the atmosphere essentially to hydrogen; and (c) pushing the substrate, while situated in the sliding member, into contact with a melt having a composition suitable for the epitaxial growth of the layer; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
Claim 16
Independent Claim
109 words
A method of liquid phase epitaxial growth of an epitaxial layer upon an InP crystal substrate comprising the steps of: (a) heating the substrate, while covered with an InP cover, in an atmosphere of essentially helium, at a predetermined temperature for a predetermined amount of time, the substrate being situated in a recess of a graphite sliding member; (b) changing the atmosphere essentially to hydrogen; and (c) pushing the substrate, while situated in the sliding member, into contact with a melt having a composition suitable for the epitaxial growth of the layer; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
Claim 17
Independent Claim
112 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of helium; (b) pushing the sliding member so that the substrate comes into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere to hydrogen substantially immediately before pushing the substrate into contact with the melt; and (d) cooling the substrate at a predetermined rate whereby the epitaxial growth of the layer results.
Claim 18
Independent Claim
112 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of helium; (b) pushing the sliding member so that the substrate comes into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere to hydrogen substantially immediately before pushing the substrate into contact with the melt; and (d) cooling the substrate at a predetermined rate whereby the epitaxial growth of the layer results.
Claim 19
Independent Claim
115 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of helium; (b) pushing the sliding member so that the substrate comes into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere to hydrogen substantially immediately after pushing the substrate into contact with the melt; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth of the layer occurs.
Claim 20
Independent Claim
115 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon a substrate containing phosphorus comprising the steps of: (a) heating the substrate in a recess in a graphite sliding member and the material in a graphite well to a predetermined temperature in an atmosphere consisting essentially of helium; (b) pushing the sliding member so that the substrate comes into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere to hydrogen substantially immediately after pushing the substrate into contact with the melt; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth of the layer occurs.
Claim 21
Independent Claim
124 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon an InP crystal substrate comprising the steps of: (a) heating both the substrate and the material, in an atmosphere of essentially nitrogen, in a furnace at a predetermined temperature for a predetermined amount of time, the substrate being covered with an InP cover and being situated in a recess of a graphite sliding member, the material being contained in a graphite well; (b) bringing the substrate, situated in the sliding member, into contact with a melt of composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere essentially to hydrogen; and (d) cooling the furnace at a predetermined rate, whereby the epitaxial growth of the layer results.
Claim 22
Independent Claim
124 words
A method of liquid phase epitaxial growth of an epitaxial layer of material upon an InP crystal substrate comprising the steps of: (a) heating both the substrate and the material, in an atmosphere of essentially nitrogen, in a furnace at a predetermined temperature for a predetermined amount of time, the substrate being covered with an InP cover and being situated in a recess of a graphite sliding member, the material being contained in a graphite well; (b) bringing the substrate, situated in the sliding member, into contact with a melt of composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere essentially to hydrogen; and (d) cooling the furnace at a predetermined rate, whereby the epitaxial growth of the layer results.
Claim 23
Independent Claim
108 words
A method of liquid phase epitaxial growth of an epitaxial layer upon an InP crystal substrate comprising the steps of: (a) heating the substrate, while covered with an InP cover, in an atmosphere of essentially helium, at a predetermined temperature for a predetermined amount of time, the substrate being situated in a recess of a graphite sliding member; (b) pushing the substrate, while situated in the sliding member, into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere essentially to hydrogen; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
Claim 24
Independent Claim
108 words
A method of liquid phase epitaxial growth of an epitaxial layer upon an InP crystal substrate comprising the steps of: (a) heating the substrate, while covered with an InP cover, in an atmosphere of essentially helium, at a predetermined temperature for a predetermined amount of time, the substrate being situated in a recess of a graphite sliding member; (b) pushing the substrate, while situated in the sliding member, into contact with a melt having a composition suitable for the epitaxial growth of the layer; (c) changing the atmosphere essentially to hydrogen; and (d) cooling the substrate and the melt at a predetermined rate whereby the epitaxial growth occurs.
References Cited (Backward Citations)
US3665888A
Cited
US3975218A
Cited
US3996891A
Cited
US3960618A
Cited
US4154630A
Cited
US4072544A
Cited
US4372791A
Cited
US4357897A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-19 | 1988-08-20 | 1989-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-19 | 1992-08-20 | 1993-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-19 | 1996-08-20 | 1997-02-19 | $7700.00 | Window Closed / Lapsed |