US3996891A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Liquid phase epitaxial growth apparatus wherein contacted wafer floats
Assignee: Sony Corp
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Filing: 1975-02-27
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Granted: 1976-12-14
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Expires: 1995-02-27
Abstract
Abstract Apparatus for and methods of forming a liquid phase epitaxial growth layer on a semiconductor wafer by floating the wafer on a solution which forms the source of the epitaxial growth layer.
Inventors
- 👤 Nobuyuki Isawa
- 👤 Kazuya Tanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:20
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/068; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/3446
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
141 words
A liquid phase epitaxial growth apparatus comprising: a vessel for containing a solution as a source of material for liquid phase epitaxial growth; holding means for holding at least one semiconductor wafer on which semiconductor wafer an epitaxial growth layer is to be formed; air-tight container within which said vessel and said holding means are disposed; means for rotating said vessel in a horizontal plane; said holding means including a hollow carrier proportioned to receive a semiconductor wafer in loosely fitting relation; and means for effecting movement of said holding menas in a vertical direction with respect to the surface of said solution so that said holding means dips into said solution, said semiconductor wafer floats on the surface of said solution while still confined within said hollow carrier, and said epitaxial growth layer is formed on said floating semiconductor wafer.
Claim 2
Dependent Claim
141 words
A liquid phase epitaxial growth apparatus comprising: a vessel for containing a solution as a source of material for liquid phase epitaxial growth; holding means for holding at least one semiconductor wafer on which semiconductor wafer an epitaxial growth layer is to be formed; air-tight container within which said vessel and said holding means are disposed; means for rotating said vessel in a horizontal plane; said holding means including a hollow carrier proportioned to receive a semiconductor wafer in loosely fitting relation; and means for effecting movement of said holding menas in a vertical direction with respect to the surface of said solution so that said holding means dips into said solution, said semiconductor wafer floats on the surface of said solution while still confined within said hollow carrier, and said epitaxial growth layer is formed on said floating semiconductor wafer.
Claim 3
Dependent Claim
35 words
A liquid phase epitaxial growth apparatus according to claim 1 further comprising a stirring means attached to said holding means, said stirring means stirring said solution when said holding means is dipped into said solution.
Claim 4
Dependent Claim
30 words
A liquid phase epitaxial growth apparatus according to claim 1 further comprising a pipe for supplying required impurities into said air-tight container, said pipe being fixed to said holding means.
Claim 5
Dependent Claim
36 words
A liquid phase epitaxial growth apparatus according to claim 1 further comprising means to maintain an inert gas atmosphere in said air tight container, and a heating means disposed in said bell jar under said vessel.
Claim 6
Dependent Claim
34 words
A liquid phase epitaxial growth apparatus according to claim 1 wherein said means for rotating said vessel comprises a cylindrical shaft, said shaft having a passage for supplying required impurities into said air-tight container.
Claim 7
Dependent Claim
41 words
A liquid phase epitaxial growth apparatus according to claim 1 further comprising a screening means fixed at said opening, said screening means breaking any surface film on the surface of said solution when said holding means is dipped into said solution.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-12-14 | 1980-06-14 | 1980-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-12-14 | 1984-06-14 | 1984-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-12-14 | 1988-06-14 | 1988-12-14 | $7700.00 | Window Closed / Lapsed |