Patent US4496403A successfully refreshed from Google Patents.
US4496403A
Expired / Lapsed
US
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Method of making a compound semiconductor laser
Assignee: ITT Inc
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Filing: 1982-11-30
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Granted: 1985-01-29
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Expires: 2002-11-30
Abstract
Abstract In the manufacture of an InP/(In,Ga) (As,P) buried rib laser, the sides of the laser are profiled to have surfaces extending in {111} A planes down to the junction between the active and lower confining layers, and to have surfaces extending in other planes beneath this junction. In the subsequent epitaxial regrowth nucleation above this junction between the surfaces is discriminated against in favor of growth beneath this junction so that the regrowth up the sides of the rib is automatically temporarily arrested in the vicinity of this junction.
Inventors
- 👤 Stephen E. H. Turley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
149 words
A method of making a compound semiconductor buried rib heterostructure laser constructed in the InP/(In,Ga)(As,P) semiconductive system including the steps of growing by liquid phase epitaxy upon a semiconductive substrate three layers comprising an active layer sandwiched between upper and lower pasive layers of higher band gap and lower refractive index material than that of the active layer, of selectively etching through said active and passive layers to leave a protruding rib whose sides are profiled having regard to the crystal orientation such that in a subsequent step of epitaxial regrowth the nucleation on the sides of the rib at and above the active layer is discriminated against by said profile in favour of nucleation beneath said active layer whereby in said regrowth the regrowth up the sides of the rib is temporarily arrested in the vicinity of the junction between the active layer and the lower passive layer.
Claim 2
Independent Claim
149 words
A method of making a compound semiconductor buried rib heterostructure laser constructed in the InP/(In,Ga)(As,P) semiconductive system including the steps of growing by liquid phase epitaxy upon a semiconductive substrate three layers comprising an active layer sandwiched between upper and lower pasive layers of higher band gap and lower refractive index material than that of the active layer, of selectively etching through said active and passive layers to leave a protruding rib whose sides are profiled having regard to the crystal orientation such that in a subsequent step of epitaxial regrowth the nucleation on the sides of the rib at and above the active layer is discriminated against by said profile in favour of nucleation beneath said active layer whereby in said regrowth the regrowth up the sides of the rib is temporarily arrested in the vicinity of the junction between the active layer and the lower passive layer.
Claim 3
Dependent Claim
49 words
A method as claimed in claim 1, wherein the growth uses an indium rich melt and the profiling of the rib is such as to provide A-plane surfaces which constitute the portions of the sides of the rib on which the nucleation of the epitaxial regrowth is discriminated against.
Claim 4
Dependent Claim
14 words
A method as claimed in claim 2, wherein said A-planes surfaces are {111}A planes.
Claim 5
Dependent Claim
42 words
A method as claimed in claim 3, wherein said A-plane surfaces are (111)A and (111)A planes extending part of the way down the sides of a rib extending in the [011] direction and protruding from a surface extending in the (100) plane.
Claim 6
Dependent Claim
49 words
A method as claimed in claim 4 wherein the profiling of the rib is such as to provide surfaces extending in the (011) and (011) planes which constitute the portions of the sides of the rib on which the nucleation of the epitaxial regrowth is discriminated in favour of.
Claim 7
Dependent Claim
25 words
A method as in claim 1 wherein said rib is profiled to be straight sided from the substrate to the active region and tapered above.
References Cited (Backward Citations)
US4326176A
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US4287485A
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US4366569A
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US4355396A
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US4276098A
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US4354898A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-29 | 1988-07-30 | 1989-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-29 | 1992-07-30 | 1993-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-29 | 1996-07-30 | 1997-01-29 | $7700.00 | Window Closed / Lapsed |