RAM Utilizing offset contact regions for increased storage capacitance

Claim 2

A memory cell comprising: a transfer device having a control electrode and an offset contact region, the control electrode being electrically connected to a word line, the contact region being electrically connected to a first bit line; a storage capacitance operatively connectable to said first bit line by selective actuation of the control electrode of said transfer device; and a second bit line spaced apart from said first bit line and capacitively coupled to said storage capacitance, wherein said second bit line substantially overlies said storage capacitance and said control electrode, and said first bit line substantially overlies said contact region.

Claim 3

A memory cell as in claim 1 wherein said transfer device is a field effect transistor having a drain region, a source region, and a gate electrode underlying said second bit line, the contact region being electrically integral with an extension of the drain region, the control electrode being the gate electrode of the field effect transistor.

Claim 4

A memory cell as in claim 2 wherein said storage capacitance comprises: a conductive plate region connected to a fixed potential, wherein said conductive plate region is arranged substantially orthogonal to said first and second bit lines and is separated from said first and second bit lines and from said semiconductor surface by a dielectric; and a doped region formed in said semiconductor surface bordering the region therein underlying the crossover area of said second bit line and said conductive plate region, wherein said doped region is electrically integral with said storage capacitance and is capacitively coupled to said second bit line.

Claim 5

A memory cell as in claim 3 wherein said doped region is the source region of said field effect transistor.

Claim 6

An integrated circuit electronic memory array having a plurality of memory cells arranged in an orthogonal array of rows and columns, each memory cell of said array having a storage region and a transfer device, each transfer device having an offset contact region and a gate region, said array comprising: a plurality of word lines arranged in rows, each of said word lines being electrically integral with the gate region of each transfer device along a row of memory cells; a plurality of bit line pairs arranged in columns substantially orthogonal to said word lines, each of said bit line pairs being arranged along each column of memory cells, wherein each bit line in a bit line pair overlies and electrically contacts the offset contact regions of alternate ones of said memory cells in a column, and wherein the opposite bit line in said bit line pair overlies the corresponding storage region and transfer device region of each one of said alternate ones of said memory cells; and capacitive means coupling each bit line in each of said bit line pairs to said alternate ones of said memory cells thereunder, wherein each memory cell is in electrical contact with one bit line of said bit line pair and is capacitively coupled to and substantially underlies the other bit line of said bit line pair.

Claim 7

An integrated circuit electronic memory array having a plurality of memory cells arranged in an orthogonal array of rows and columns, each memory cell of said array having a storage region and a transfer device, each transfer device having an offset contact region and a gate region, said array comprising: a plurality of word lines arranged in rows, each of said word lines being electrically integral with the gate region of each transfer device along a row of memory cells; a plurality of bit line pairs arranged in columns substantially orthogonal to said word lines, each of said bit line pairs being arranged along each column of memory cells, wherein each bit line in a bit line pair overlies and electrically contacts the offset contact regions of alternate ones of said memory cells in a column, and wherein the opposite bit line in said bit line pair overlies the corresponding storage region and transfer device region of each one of said alternate ones of said memory cells; and capacitive means coupling each bit line in each of said bit line pairs to said alternate ones of said memory cells thereunder, wherein each memory cell is in electrical contact with one bit line of said bit line pair and is capacitively coupled to and substantially underlies the other bit line of said bit line pair.

Claim 8

An integrated circuit memory cell structure comprising: a semiconductor substrate doped with impurities of a first conductivity type; a gate oxide formed on portions of said semiconductor substrate; polysilicon conductors formed on portions of said gate oxide, a first one of said polysilicon conductors forming one plate of a storage capacitance, at least another one of said polysilicon conductors forming a gate electrode of a transfer device; first and second spaced apart doped regions formed by impurities of opposite conductivity type formed in said substrate in portions thereof substantially not masked by said polysilicon conductors; an insulator covering said polysilicon conductors and said first and second doped regions; a first metal bit line on said insulator overlying said first and second doped regions and said polysilicon conductors and forming a capacitance with at least one of said first and second doped regions, thereby capacitively coupling said first metal bit line to said memory cell, said first metal bit line being otherwise electrically isolated from the memory cell with which it is capacitively coupled; and a third doped region formed by impurities of said opposite conductivity type in said substrate, said third doped region contacting said second doped region and extending laterally from under said first metal bit line to under a second metal bit line, said third doped region being electrically isolated from said first bit line and electrically connected to said second bit line.

Claim 9

An integrated circuit memory cell structure comprising: a semiconductor substrate doped with impurities of a first conductivity type; a gate oxide formed on portions of said semiconductor substrate; polysilicon conductors formed on portions of said gate oxide, a first one of said polysilicon conductors forming one plate of a storage capacitance, at least another one of said polysilicon conductors forming a gate electrode of a transfer device; first and second spaced apart doped regions formed by impurities of opposite conductivity type formed in said substrate in portions thereof substantially not masked by said polysilicon conductors; an insulator covering said polysilicon conductors and said first and second doped regions; a first metal bit line on said insulator overlying said first and second doped regions and said polysilicon conductors and forming a capacitance with at least one of said first and second doped regions, thereby capacitively coupling said first metal bit line to said memory cell, said first metal bit line being otherwise electrically isolated from the memory cell with which it is capacitively coupled; and a third doped region formed by impurities of said opposite conductivity type in said substrate, said third doped region contacting said second doped region and extending laterally from under said first metal bit line to under a second metal bit line, said third doped region being electrically isolated from said first bit line and electrically connected to said second bit line.