US4487162A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnetoplasmadynamic apparatus for the separation and deposition of materials
Assignee: Celestech Inc
•
Filing: 1983-02-24
•
Granted: 1984-12-11
•
Expires: 2003-02-24
Abstract
Abstract A plasma arc discharge method for deposition of metallic and semiconductor layers on a substrate for the purpose of producing semiconductor grade materials such as silicon at a reduced cost. Magnetic fields are used so that silicon ions and electrons can be directed toward a target area where they are deposited. The ions and electrons are preferably injected as a compound in gaseous of liquid form but may also be injected in liquid elemental form or vaporized from a thermionic cathode. The magnetic fields include an accelerating magnetic field and a focusing magnetic field. The accelerating magnetic field is adjusted to support a desired high ion flux rate and the focusing magnet can control the plasma beam direction and divergence. The silicon provided in a compound form or in the form of metallurigical silicon is purified during the deposition process by a carrier substance which may be a part of the compound or separately injected. Chemical purification is accomplished by separation of the silicon due to ionization potential differences between silicon and other elements. The magnetic acceleration technique allows the use of pressures under 10 -1 torr thereby facilitating plasma formation and allowing the materials to be deposited with a desired high purity.
Inventors
- 👤 Gordon L. Cann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:43
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32055; C; C01; C01B; C01B33/00; C01B33/02; C01B33/037; C22; C22B; C22B41/00; C22B9/00; C22B9/16; C22B9/22; C22B9/226; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/50; C23C16/513; Y; Y10; Y10S; Y10S118/00; Y10S118/90
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
204 words
An apparatus for refining semiconductor materials by using a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus; (b) a magnetoplasmadynamic Hall effect plasma generator, the plasma generator further comprising: a cathode an anode an accelerating magnet located adjacent that portion of the cathode closest to the anode; a focusing magnet at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the power enabling the plasma generator to create a plasma; (e) a target surface, the target surface being located beyond the focusing magnet with respect to the cathode and anode; (f) a means for injecting materials into the plasma in order to create a plasma stream; (g) an access door enabling access to the inside of the vacuum chamber from the outside, the access door having sealing means, whereby said injected materials are preferentially ionized by the plasma generator, thereby causing impurities in the materials to separate while they are in the plasma stream.
Claim 2
Independent Claim
204 words
An apparatus for refining semiconductor materials by using a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus; (b) a magnetoplasmadynamic Hall effect plasma generator, the plasma generator further comprising: a cathode an anode an accelerating magnet located adjacent that portion of the cathode closest to the anode; a focusing magnet at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the power enabling the plasma generator to create a plasma; (e) a target surface, the target surface being located beyond the focusing magnet with respect to the cathode and anode; (f) a means for injecting materials into the plasma in order to create a plasma stream; (g) an access door enabling access to the inside of the vacuum chamber from the outside, the access door having sealing means, whereby said injected materials are preferentially ionized by the plasma generator, thereby causing impurities in the materials to separate while they are in the plasma stream.
Claim 3
Dependent Claim
82 words
The apparatus of claim 1 wherein the means for injecting materials into the plasma is adapted to receive a carrier material, the carrier material being effective to combine with impurities in semiconductor materials in the plasma stream in order to separate the impurities from the semiconductor material before the semiconductor material is deposited at the target area, thus permitting the semiconductor material to be deposited in a state of purity which is greater than the purity of the semiconductor material before deposition.
Claim 4
Dependent Claim
44 words
The apparatus of claim 2 wherein the means for injecting materials into the plasma is further adapted to inject dopant material so that the dopant material may be applied to the semiconductor material as the semiconductor material is being applied to the target area.
Claim 5
Dependent Claim
14 words
The apparatus of claim 3 wherein the dopant is mixed with the carrier material.
Claim 6
Dependent Claim
24 words
The apparatus of claim 2 further comprising a robot means, the robot means being operable to move materials to and from the target area.
Claim 7
Dependent Claim
12 words
The apparatus of claim 5 wherein the cathode is a thermionic cathode.
Claim 8
Dependent Claim
23 words
The apparatus of claim 2 wherein elemental silicon is injected as a liquid into the plasma generator during the operation of the apparatus.
Claim 9
Independent Claim
20 words
The apparatus of claims 2 or 3 wherein the means for injecting materials injects the materials adjacent to the cathode.
Claim 10
Independent Claim
14 words
The apparatus of claims 1 or 3 wherein the cathode is a thermionic cathode.
Claim 11
Independent Claim
21 words
The apparatus of claims 1 or 2 wherein silicon is injected into the plasma generator during the operation of the apparatus.
Claim 12
Dependent Claim
14 words
The apparatus of claim 10 wherein the silicon is injected as a fluid compound.
Claim 13
Dependent Claim
13 words
The apparatus of claim 10 wherein the silicon is injected at the anode.
Claim 14
Dependent Claim
13 words
The apparatus of claim 10 wherein the silicon is injected at the cathode.
Claim 15
Dependent Claim
23 words
The apparatus according to claim 1 or 2 wherein the vacuum pumping apparatus comprises a cryogenic vacuum pump and an ion vacuum pump.
Claim 16
Dependent Claim
35 words
The apparatus of claim 1 wherein the injected materials comprise silicon and the preferential ionization and the separation of impurities from the semiconductor materials results in semiconductor grade silicon being deposited at the target surface.
Claim 17
Independent Claim
22 words
The apparatus of claims 1 or 15 wherein a coil assembly is provided for condensing materials which escape from the plasma stream.
Claim 18
Independent Claim
36 words
The apparatus of claims 1 or 15 wherein the plasma generator is surrounded by an accelerating magnet which accelerates the plasma thereby causing the materials in the plasma to be transported away from the plasma generator.
Claim 19
Independent Claim
281 words
An apparatus for refining semiconductor metals used to form semiconductor junction devices by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus: (b) a magnetoplasmadynamic Hall effect plasma generator, the plasma generator further comprising: a thermionic cathode; an anode; an accelerating magnet located adjacent the cathode; a focusing magnet, at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the electric power enabling the plasma generator to create a plasma stream with ions from the thermionic cathode; (e) a means to supply semiconductor materials to the plasma generator, the semiconductor materials having a degree of purity less than that required for semiconductors; (f) a target area, the target area being positioned within the vacuum chamber so that the plasma stream may be discharged by the plasma generator and materials in the plasma stream may then be deposited at the target area; (g) a means for injecting carrier materials into the plasma stream; (h) an access door for the vacuum chamber, the access door permitting access to within the vacuum chamber from outside the vacuum chamber and the access door having sealing means, whereby said carrier materials combine with impurities in the semiconductor materials when the carrier materials and semiconductor materials are in the plasma stream and the materials are preferentially ionized, thereby causing the impurities to separate from the semiconductor materials while the materials are in the plasma stream.
Claim 20
Independent Claim
281 words
An apparatus for refining semiconductor metals used to form semiconductor junction devices by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus: (b) a magnetoplasmadynamic Hall effect plasma generator, the plasma generator further comprising: a thermionic cathode; an anode; an accelerating magnet located adjacent the cathode; a focusing magnet, at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the electric power enabling the plasma generator to create a plasma stream with ions from the thermionic cathode; (e) a means to supply semiconductor materials to the plasma generator, the semiconductor materials having a degree of purity less than that required for semiconductors; (f) a target area, the target area being positioned within the vacuum chamber so that the plasma stream may be discharged by the plasma generator and materials in the plasma stream may then be deposited at the target area; (g) a means for injecting carrier materials into the plasma stream; (h) an access door for the vacuum chamber, the access door permitting access to within the vacuum chamber from outside the vacuum chamber and the access door having sealing means, whereby said carrier materials combine with impurities in the semiconductor materials when the carrier materials and semiconductor materials are in the plasma stream and the materials are preferentially ionized, thereby causing the impurities to separate from the semiconductor materials while the materials are in the plasma stream.
Claim 21
Dependent Claim
24 words
The apparatus of claim 18 further comprising a robot means, the robot means being operable to move materials to and from the target area.
Claim 22
Dependent Claim
19 words
The apparatus of claim 18 wherein the semiconductor metal is silicon and the silicon is injected at the anode.
Claim 23
Dependent Claim
20 words
The apparatus of claim 18 wherein the semiconductor metal is silicon and the silicon is injected adjacent to the cathode.
Claim 24
Dependent Claim
21 words
The apparatus according to claim 18 wherein the vacuum pumping apparatus comprises a cryogenic vacuum pump and an ion vacuum pump.
Claim 25
Dependent Claim
42 words
The apparatus of claim 18 wherein the semiconductor materials supplied to the plasma generator are metallurgical grade silicon, and the preferential ionization and the separation of impurities from the semiconductor materials results in semiconductor grade silicon being deposited at the target area.
Claim 26
Independent Claim
22 words
The apparatus of claims 18 or 23 wherein a coil assembly is provided for condensing materials which escape from the plasma stream.
Claim 27
Independent Claim
36 words
The apparatus of claims 18 or 23 wherein the plasma generator is surrounded by an accelerating magnet which accelerates the plasma thereby causing the materials in the plasma to be transported away from the plasma generator.
Claim 28
Independent Claim
233 words
An apparatus for refining semiconductor metals used to form semiconductor junction devices by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus; (b) a magnetoplasmadynamic plasma generator, the plasma generator further comprising: a cathode an anode an accelerating magnet located adjacent that portion of the cathode closest to the anode a focusing magnet, at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the power enabling the plasma generator to create a plasma; (e) a target surface, the target surface being located beyond the focusing magnet with respect to the cathode and anode; (f) a means for injecting materials into the plasma in order to create a plasma stream; (g) an access door enabling access to the inside of the access chamber from the outside, the access door having a sealing means; (h) a coil assembly located substantially concentrically within said focusing magnet which cools and thereby condenses gases escaping from said plasma; and (i) a baffle assembly located substantially concentrically within said coil assembly and surrounding said plasma so as to protect and separate said coil assembly from said plasma.
Claim 29
Independent Claim
233 words
An apparatus for refining semiconductor metals used to form semiconductor junction devices by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus; (b) a magnetoplasmadynamic plasma generator, the plasma generator further comprising: a cathode an anode an accelerating magnet located adjacent that portion of the cathode closest to the anode a focusing magnet, at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the power enabling the plasma generator to create a plasma; (e) a target surface, the target surface being located beyond the focusing magnet with respect to the cathode and anode; (f) a means for injecting materials into the plasma in order to create a plasma stream; (g) an access door enabling access to the inside of the access chamber from the outside, the access door having a sealing means; (h) a coil assembly located substantially concentrically within said focusing magnet which cools and thereby condenses gases escaping from said plasma; and (i) a baffle assembly located substantially concentrically within said coil assembly and surrounding said plasma so as to protect and separate said coil assembly from said plasma.
Claim 30
Independent Claim
256 words
An apparatus for refining semiconductor metals used to form semiconductor junction devices by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus; (b) a magnetoplasmadynamic plasma generator, the plasma generator further comprising: a thermionic cathode an anode an accelerating magnet located adjacent the cathode a focusing magnet, at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the electric power enabling the plasma generator to create a plasma stream with ions from the thermionic cathode; (e) a target area, the target area being positioned within the vacuum chamber so that the plasma stream may be discharged by the plasma generator and the materials in the plasma stream may then be deposited at the target area; (f) a means for injecting materials into the plasma stream; (g) an access door for the vacuum chamber, the access door permitting access to within the vacuum chamber from outside the vacuum chamber and the access door having sealing means; (h) a coil assembly located substantially concentrically within said focusing magnet which cools and thereby condenses gases escaping from said plasma; and (i) a baffle assembly located substantially concentrically within said soil assembly and surrounding said plasma so as to protect and separate said coil assembly from said plasma.
Claim 31
Independent Claim
256 words
An apparatus for refining semiconductor metals used to form semiconductor junction devices by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus; (b) a magnetoplasmadynamic plasma generator, the plasma generator further comprising: a thermionic cathode an anode an accelerating magnet located adjacent the cathode a focusing magnet, at least part of which is located beyond the anode with respect to the cathode; (c) a plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber; (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the electric power enabling the plasma generator to create a plasma stream with ions from the thermionic cathode; (e) a target area, the target area being positioned within the vacuum chamber so that the plasma stream may be discharged by the plasma generator and the materials in the plasma stream may then be deposited at the target area; (f) a means for injecting materials into the plasma stream; (g) an access door for the vacuum chamber, the access door permitting access to within the vacuum chamber from outside the vacuum chamber and the access door having sealing means; (h) a coil assembly located substantially concentrically within said focusing magnet which cools and thereby condenses gases escaping from said plasma; and (i) a baffle assembly located substantially concentrically within said soil assembly and surrounding said plasma so as to protect and separate said coil assembly from said plasma.
Claim 32
Independent Claim
138 words
An apparatus for refining metals by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber; (b) a magnetoplasmadynamic Hall effect plasma generator including: (i) a cathode, (ii) an anode, (iii) plasma accelerating means located adjacent the cathode, (iv) plasma focusing means at least partially located beyond the anode with respect to the cathode, (v) said plasma generator being supported within said vacuum chamber; (c) means supplying said plasma generator with electric power thereby enabling the plasma generator to create a plasma stream; (d) a target area positioned within said vacuum chamber for receipt of materials contained in the plasma stream; (e) means for injecting materials into the plasma stream; and (f) a coil assembly located in surrounding relation to said plasma stream which cools and thereby condenses gases escaping from said plasma.
Claim 33
Independent Claim
138 words
An apparatus for refining metals by means of a plasma spray magnetically accelerated in a vacuum comprising: (a) a vacuum chamber; (b) a magnetoplasmadynamic Hall effect plasma generator including: (i) a cathode, (ii) an anode, (iii) plasma accelerating means located adjacent the cathode, (iv) plasma focusing means at least partially located beyond the anode with respect to the cathode, (v) said plasma generator being supported within said vacuum chamber; (c) means supplying said plasma generator with electric power thereby enabling the plasma generator to create a plasma stream; (d) a target area positioned within said vacuum chamber for receipt of materials contained in the plasma stream; (e) means for injecting materials into the plasma stream; and (f) a coil assembly located in surrounding relation to said plasma stream which cools and thereby condenses gases escaping from said plasma.
Claim 34
Dependent Claim
13 words
The apparatus of claim 28, further wherein said cathode comprises a thermionic cathode.
Claim 35
Dependent Claim
14 words
The apparatus of claim 28, further wherein said plasma accelerating means comprises a magnet.
Claim 36
Dependent Claim
15 words
The apparatus of claim 28 or 30 wherein said plasma focusing means comprises a magnet.
Claim 37
Dependent Claim
14 words
The apparatus of claim 28 further wherein said electric power comprises primarily direct current.
Claim 38
Dependent Claim
35 words
The apparatus of claim 28 or 32 further including an access door for the vacuum chamber, the access door permitting access to within the vacuum chamber from outside the vacuum chamber and including sealing means.
Claim 39
Dependent Claim
35 words
The apparatus of claim 28 further including a baffle assembly located substantially concentrically within said coil assembly and surrounding said plasma stream so as to protect and separate said coil assembly from said plasma stream.
Claim 40
Independent Claim
19 words
The apparatus of claims 28 or 34 wherein said coil assembly is located substantially concentrically within said focusing means.
Claim 41
Dependent Claim
13 words
The apparatus of claim 35 further wherein said focusing means comprises a magnet.
Claim 42
Dependent Claim
13 words
The apparatus of claim 36 further wherein said accelerating means comprises a magnet.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-11 | 1988-06-11 | 1988-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-11 | 1992-06-11 | 1992-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-11 | 1996-06-11 | 1996-12-11 | $7700.00 | Window Closed / Lapsed |