US3160522A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producting monocrystalline semiconductor layers
Assignee: Siemens and Halske AG
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Filing: 1961-11-29
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Granted: 1964-12-08
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Expires: 1981-11-29
Abstract
No abstract record available.
Inventors
- 👤 Heywang Walter
- 👤 Ziegler Gunther
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:57
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/12; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/071; Y10S148/107; Y10S148/15
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
140 words
A METHOD FOR PRODUCING MONOCRYSTALLINE, PARTICULARLY THIN, SEMICONDUCTING LAYERS BY THERMAL DECOMPOSITION OF A GASEOUS COMPOUND OF THE SEMICONDUCTOR SUBSTANCE AND PRECIPITATION OF THE SEMICONDUCTOR SUBSTANCE ONTO A PLATE-SHAPED CARRIER HAVING A MELTING POINT ABOVE THAT OF THE SEMICONDUCTOR SUBSTANCE, WHICH COMPRISES USING A CARRIER OF A MATERIAL HAVING A CONSTITUTION DIFFERENT FROM THE LATTICE STRUCTURE OF THE SEMICONDUCTOR SUBSTANCE BEING PRECIPITATED, HEATING A NARROW ZONE OF SAID CARRIER TO A TEMPERATURE ABOVE THE MELTING POINT OF SAID SEMICONDUCTOR TO BE PRECIPITATED DISSOCIATING A GASEOUS SEMICONDUCTOR COMPOUND OF SAID SEMICONDUCTOR SUBSTANCE IN SAID NARROW ZONE OF SAID CARRIER THEREBY PRECIPITATING A LIQUID SEMICONDUCTOR LAYER ON SAID CARRIER IN SAID NARROW ZONE, MAINTAINING A TEMPERATURE GRADIENT DURING COOLING OF SAID LIQUID SEMICONDUCTOR LAYER WHEREBY THE HORIZONTAL SEMICONDUCTOR SURFACE FARTHEST FROM SAID CARRIER SOLIDIFIES, FIRST, AND PASSING SAID ZONE ALONG SAID CARRIER.
Claim 2
Independent Claim
140 words
A METHOD FOR PRODUCING MONOCRYSTALLINE, PARTICULARLY THIN, SEMICONDUCTING LAYERS BY THERMAL DECOMPOSITION OF A GASEOUS COMPOUND OF THE SEMICONDUCTOR SUBSTANCE AND PRECIPITATION OF THE SEMICONDUCTOR SUBSTANCE ONTO A PLATE-SHAPED CARRIER HAVING A MELTING POINT ABOVE THAT OF THE SEMICONDUCTOR SUBSTANCE, WHICH COMPRISES USING A CARRIER OF A MATERIAL HAVING A CONSTITUTION DIFFERENT FROM THE LATTICE STRUCTURE OF THE SEMICONDUCTOR SUBSTANCE BEING PRECIPITATED, HEATING A NARROW ZONE OF SAID CARRIER TO A TEMPERATURE ABOVE THE MELTING POINT OF SAID SEMICONDUCTOR TO BE PRECIPITATED DISSOCIATING A GASEOUS SEMICONDUCTOR COMPOUND OF SAID SEMICONDUCTOR SUBSTANCE IN SAID NARROW ZONE OF SAID CARRIER THEREBY PRECIPITATING A LIQUID SEMICONDUCTOR LAYER ON SAID CARRIER IN SAID NARROW ZONE, MAINTAINING A TEMPERATURE GRADIENT DURING COOLING OF SAID LIQUID SEMICONDUCTOR LAYER WHEREBY THE HORIZONTAL SEMICONDUCTOR SURFACE FARTHEST FROM SAID CARRIER SOLIDIFIES, FIRST, AND PASSING SAID ZONE ALONG SAID CARRIER.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-12-08 | 1968-06-08 | 1968-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-12-08 | 1972-06-08 | 1972-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-12-08 | 1976-06-08 | 1976-12-08 | $7700.00 | Window Closed / Lapsed |