Glow discharge method and apparatus and photoreceptor devices made therewith

Claim 2

A photoreceptor comprising an electrically conductive substrate coated with a combination of a first layer of semiconductive material disposed on the surface of said substrate, and a layer of dielectric material disposed upon the surface of said first layer of semiconductive material whereby said combination is substantially blocking to charge carriers present in the dark and is conducting to charge carriers generated under electromagnetic radiation.

Claim 3

A photoreceptor of the type described in claim 1 wherein the thickness of said dielectric layer and said semiconductor layer are sufficiently great to increase the surface voltage on dark areas of the surface during corona charging and sufficiently small to reduce residual charge when illuminated by electromagnetic radiation.

Claim 4

A photoreceptor of the type described in claim 1 wherein said semiconductor material comprises a doped semiconductor.

Claim 5

A photoreceptor of the type described in claim 1 wherein said semiconductive material comprises a p-type semiconductor.

Claim 6

A photoreceptor of the type described in claim 4 wherein said p-type semiconductive material comprises hydrogenated amorphous silicon doped with boron.

Claim 7

A photoreceptor of the type described in claim 1 wherein a second layer of semiconductor material is positioned on a surface of said dielectric material.

Claim 8

A photoreceptor of the type described in claim 1 wherein said dielectric layer comprises a nitride of silicon.

Claim 9

A photoreceptor of the type described in claim 1 wherein a semi-transparent protective layer is deposited on the surface of said dielectric.

Claim 10

A photoreceptor of the type described in claim 1 wherein said semiconductive material comprises boron.

Claim 11

A photoreceptor of the type described in claim 1 wherein said semiconductive material comprises silicon and dopant.

Claim 12

A photoreceptor disposed upon the surface of an electrically conductive substrate comprising a layer of photoconductive semiconductor material disposed upon the surface of said substrate, a layer of dielectric material disposed upon the surface of said layer of photoconductive semiconductor material, said dielectric material being conductive under electromagnetic radiation, and the thickness of said dielectric layer being sufficiently great to increase the charge on dark areas of the surface of said dielectric layer and sufficiently small to reduce residual charge on illuminated areas of the surface of said dielectric layer.

Claim 13

A photoreceptor disposed upon the surface of an electrically conductive substrate comprising a layer of photoconductive semiconductor material disposed upon the surface of said substrate, a layer of dielectric material disposed upon the surface of said layer of photoconductive semiconductor material, said dielectric material being conductive under electromagnetic radiation, and the thickness of said dielectric layer being sufficiently great to increase the charge on dark areas of the surface of said dielectric layer and sufficiently small to reduce residual charge on illuminated areas of the surface of said dielectric layer.

Claim 14

A photoreceptor of the type described in claim 11 wherein said layer of photoconductive semiconductor material comprises hydrogenated amorphous silicon.

Claim 15

A photoreceptor of the type described in claim 12 wherein said layer of hydrogenated amorphous silicon is deposited upon the surface of said substrate by means of a glow discharge.

Claim 16

A photoreceptor of the type described in claim 11 wherein said layer of dielectric material comprises a nitride of silicon.

Claim 17

A photoreceptor of the type described in claim 10 further comprising a layer of n-type semiconductive material interposed between said surface of said substrate and said layer of photoconductive semiconductor material.

Claim 18

A photoreceptor of the type described in claim 15 wherein said layer of n-type material comprises hydrogenated amorphous silicon doped with phosphorous.

Claim 19

A photoreceptor disposed upon the surface of an electrically conductive substrate, comprising a layer of semiconductive material disposed upon the surface of said substrate, a dielectric layer disposed upon the surface of said layer of semiconductive material, wherein said dielectric layer is photoconductive under electromagnetic radiation.

Claim 20

A photoreceptor disposed upon the surface of an electrically conductive substrate, comprising a layer of semiconductive material disposed upon the surface of said substrate, a dielectric layer disposed upon the surface of said layer of semiconductive material, wherein said dielectric layer is photoconductive under electromagnetic radiation.

Claim 21

Electrophotographic apparatus comprising in combination photoreceptor means having a photoreceptive surface, means for electrically charging said photoreceptive surface, means for selectively exposing said charged photoreceptive surface to electromagnetic radiation so that irradiated areas of said photoreceptive surface are selectively discharged, and means for developing an image on said photoreceptive surface corresponding to the selective exposure by electromagnetic radiation, wherein said photoreceptor means comprises an electrically conductive substrate means, a photoreceptor disposed upon the surface of an electrically conductive substrate, comprising: a combination of a first layer of semiconductive material disposed upon the surface of said substrate, and a second layer comprising silicon and nitrogen disposed upon the surface of said first layer of semiconductive material, in which said combination is substantially blocking to charge carriers present in the dark and is conducting to charge carriers generated under electromagnetic radiation.

Claim 22

Electrophotographic apparatus comprising in combination photoreceptor means having a photoreceptive surface, means for electrically charging said photoreceptive surface, means for selectively exposing said charged photoreceptive surface to electromagnetic radiation so that irradiated areas of said photoreceptive surface are selectively discharged, and means for developing an image on said photoreceptive surface corresponding to the selective exposure by electromagnetic radiation, wherein said photoreceptor means comprises an electrically conductive substrate means, a photoreceptor disposed upon the surface of an electrically conductive substrate, comprising: a combination of a first layer of semiconductive material disposed upon the surface of said substrate, and a second layer comprising silicon and nitrogen disposed upon the surface of said first layer of semiconductive material, in which said combination is substantially blocking to charge carriers present in the dark and is conducting to charge carriers generated under electromagnetic radiation.

Claim 23

Electrophotographic apparatus of the type described in claim 18 wherein said developing means comprises means for applying an electrostatically charged opaque toner to said photoreceptive surface so that said toner selectively adheres to the charged areas of said photoreceptive surface, a copy surface, means for transferring said toner from said photoreceptive surface to said copy surface, and means for fixing said toner on said copy surface, and wherein said substrate means comprises an electrically conductive drum.

Claim 24

Electrophotographic apparatus of the type described in claim 18 wherein said developing means comprises means for applying an electrostatically charged opaque toner to said photoreceptive surface so that said toner selectively adheres to the charged areas of said photoreceptive surface, and means for fixing said toner on said photoreceptive surface.

Claim 25

Electrophotographic apparatus of the type described in claim 20 wherein said substrate means comprises a web of electrically conductive material.

Claim 26

Electrophotographic apparatus of the type described in claim 18 wherein said photoreceptor means further comprises a layer of thermoplastic material disposed on said photoreceptive surface, and wherein said developing means comprises means for heating said layer of thermoplastic material so as to selectively deform the charged areas of the surface of said layer of thermoplastic material.

Claim 27

Electrophotographic apparatus of the type described in claim 18 wherein said semiconductive material comprises boron.

Claim 28

Electrophotographic apparatus of the type described in claim 18 wherein said semiconductive material comprises silicon and dopant.