US4359512A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Layered photoconductive member having barrier of silicon and halogen
Assignee: Canon Inc
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Filing: 1981-03-05
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Granted: 1982-11-16
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Expires: 2001-03-05
Abstract
Abstract Disclosed is a panchromatic photoconductive element for electrophotography having a layered structure comprising a substrate, a barrier layer and a photoconductive layer. The barrier layer inhibits injection of carriers from the substrate. Amorphous silicon forms a matrix for either the photoconductive layer or the barrier layer.
Inventors
- 👤 Tadaji Fukuda
- 👤 Shigeru Shirai
- 👤 Junichiro Kanbe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:18
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235; G03G5/08221; Y; Y10; Y10S; Y10S430/00; Y10S430/001; Y10S430/10
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
222 words
A photoconductive member comprising a substrate for the photoconductive member, a photoconductive layer, and a barrier layer arranged between the substrate and the photoconductive layer, said barrier layer having a function which inhibits injection of carriers from the side of said substrate into said photoconductive layer, characterized in that at least one of said photoconductive layer and said barrier layer is made of an amorphous material in which silicon atom is a matrix and halogen atom is a constituent atom, a depletion layer region is created at the interfacial region between the photoconductive layer and the barrier layer, a part of said barrier layer is present between said depletion layer region and said substrate in a thickness capable of bringing substantially negligible probability which the carriers having the same polarity as that of the minor carriers in said barrier layer reaches said depletion layer region from the side of said substrate in order to inhibit injection of the carriers having the same polarity as that of the minor carriers in said barrier layer from the side of said substrate to said photoconductive layer, and the photocarriers having the same polarity as that of the major carriers in said barrier layer among photocarriers generating in said photoconductive layer by irradiation of an electromagnetic waves are moved in the direction of said barrier layer.
Claim 2
Dependent Claim
222 words
A photoconductive member comprising a substrate for the photoconductive member, a photoconductive layer, and a barrier layer arranged between the substrate and the photoconductive layer, said barrier layer having a function which inhibits injection of carriers from the side of said substrate into said photoconductive layer, characterized in that at least one of said photoconductive layer and said barrier layer is made of an amorphous material in which silicon atom is a matrix and halogen atom is a constituent atom, a depletion layer region is created at the interfacial region between the photoconductive layer and the barrier layer, a part of said barrier layer is present between said depletion layer region and said substrate in a thickness capable of bringing substantially negligible probability which the carriers having the same polarity as that of the minor carriers in said barrier layer reaches said depletion layer region from the side of said substrate in order to inhibit injection of the carriers having the same polarity as that of the minor carriers in said barrier layer from the side of said substrate to said photoconductive layer, and the photocarriers having the same polarity as that of the major carriers in said barrier layer among photocarriers generating in said photoconductive layer by irradiation of an electromagnetic waves are moved in the direction of said barrier layer.
Claim 3
Dependent Claim
19 words
A photoconductive member according to claim 1, in which a barrier layer has semiconductive characteristics of p + type.
Claim 4
Dependent Claim
26 words
A photoconductive member according to claim 2, in which a barrier layer contains an atom in III A group of the periodic table as an impurity.
Claim 5
Dependent Claim
24 words
A photoconductive member according to claim 3, in which an impurity atom contained in a barrier layer ranges from 50 ppm to 1000 ppm.
Claim 6
Dependent Claim
19 words
A photoconductive member according to claim 1, in which a barrier layer has semiconductive characteristics of n + type.
Claim 7
Dependent Claim
26 words
A photoconductive member according to claim 5, in which a barrier layer contains an atom in V A group of the periodic table as an impurity.
Claim 8
Dependent Claim
24 words
A photoconductive member according to claim 6, in which an impurity atom contained in a barrier layer ranges from 50 ppm to 1000 ppm.
Claim 9
Dependent Claim
18 words
A photoconductive member according to claim 1, in which a barrier layer has a thickness of 0.02-0.5 microns.
Claim 10
Dependent Claim
32 words
A photoconductive member according to claim 1, in which a barrier layer is constructed with an amorphous material in which silicon atom is a matrix and hydrogen atom is a constituent atom.
Claim 11
Dependent Claim
20 words
A photoconductive member according to claim 9, in which hydrogen atom is contained in an amount of 1-40 atomic percent.
Claim 12
Dependent Claim
32 words
A photoconductive member according to claim 1, in which a barrier layer is constructed with an amorphous material in which silicon atom is a matrix and halogen atom is a constituent atom.
Claim 13
Dependent Claim
20 words
A photoconductive member according to claim 11, in which halogen atom is contained in an amount of 1-40 atomic percent.
Claim 14
Dependent Claim
32 words
A photoconductive member according to claim 1, in which a barrier layer is constructed with an amorphous material in which silicon is a matrix, and halogen and hydrogen atoms are constituent atoms.
Claim 15
Dependent Claim
38 words
A photoconductive member according to claim 13, in which halogen and hydrogen atoms are contained in an amount of 1-40 atomic percent as the whole sum and a hydrogen content is not more than twice a halogen content.
Claim 16
Dependent Claim
33 words
A photoconductive member according to claim 1, in which a photoconductive layer has at least one semiconductive characteristic selected from the group consisting of n - type, i type and p - type.
Claim 17
Dependent Claim
33 words
A photoconductive member according to claim 15, in which a photoconductive layer contains an atom in III A group of the periodic table in an amount not reaching 50 ppm as an impurity.
Claim 18
Dependent Claim
18 words
A photoconductive member according to claim 1, in which a photoconductive layer has a thickness of 1-70 microns.
Claim 19
Dependent Claim
223 words
A photoconductive member comprising a substrate for the photoconductive member, a photoconductive layer, and a barrier layer being present between the substrate and the photoconductive layer, said barrier layer having a function which inhibits injection of a carrier from the side of said substrate into said photoconductive layer, characterized in that at least one of said photoconductive layer and said barrier layer is constructed by amorphous material in which silicon atom is a matrix and halogen atom is a constituent, a depletion layer region is created at the interfacial region between the photoconductive layer and the barrier layer, said barrier layer having a thickness of 0.02-0.5 microns and containing in an amount of 50-1000 ppm of an impurity which governs the conductive type of the barrier layer, said impurity being an atom in III A or V A group of the periodic table, said photoconductive layer having a thickness of 1-70 microns and containing no impurity which governs the conductive type of the photoconductive layer or in an amount not reaching 50 ppm of said impurity being an atom in III A group of the periodic table, and when N represents a quantity of said impurity contained in said barrier layer and M represents a quantity of said impurity contained in said photoconductive layer, a value of (N-M)/M ranges from 0.5 to 1.0.
Claim 20
Dependent Claim
223 words
A photoconductive member comprising a substrate for the photoconductive member, a photoconductive layer, and a barrier layer being present between the substrate and the photoconductive layer, said barrier layer having a function which inhibits injection of a carrier from the side of said substrate into said photoconductive layer, characterized in that at least one of said photoconductive layer and said barrier layer is constructed by amorphous material in which silicon atom is a matrix and halogen atom is a constituent, a depletion layer region is created at the interfacial region between the photoconductive layer and the barrier layer, said barrier layer having a thickness of 0.02-0.5 microns and containing in an amount of 50-1000 ppm of an impurity which governs the conductive type of the barrier layer, said impurity being an atom in III A or V A group of the periodic table, said photoconductive layer having a thickness of 1-70 microns and containing no impurity which governs the conductive type of the photoconductive layer or in an amount not reaching 50 ppm of said impurity being an atom in III A group of the periodic table, and when N represents a quantity of said impurity contained in said barrier layer and M represents a quantity of said impurity contained in said photoconductive layer, a value of (N-M)/M ranges from 0.5 to 1.0.
Claim 21
Dependent Claim
20 words
A photoconductive member according to claim 18, in which halogen atom is contained in an amount of 1-40 atomic percent.
Claim 22
Dependent Claim
203 words
A photoconductive member comprising a substrate for the photoconductive member, a photoconductive layer, and a barrier layer arranged between the substrate and the photoconductive layer, said barrier layer having a function which inhibits injection of carriers from the side of said substate into said photoconductive layer, characterized in that at least one of said photoconductive layer and said barrier layer is made of an amorphous material in which silicon atom is a matrix and halogen atom is a constituent atom, a depletion layer region is created at the interfacial region between the photoconductive layer and the barrier layer, said barrier layer containing an impurity which governs the conductive type of said barrier layer to inhibit injection of the carriers having the same polarity as that of the minor carriers in said barrier layer from the side of said substrate to said photoconductive layer, said photoconductive layer containing an impurity which governs the conductive type of said photoconductive layer or not containing such impurity, and theimpurity concentration to satisfy a relationship of (N-M)/N ranges from 0.5 to 1.0 wherein N is a quantity of the impurity contained in the barrier layer, and M is a quantity of the impurity contained in the pootoconductive layer.
Claim 23
Dependent Claim
203 words
A photoconductive member comprising a substrate for the photoconductive member, a photoconductive layer, and a barrier layer arranged between the substrate and the photoconductive layer, said barrier layer having a function which inhibits injection of carriers from the side of said substate into said photoconductive layer, characterized in that at least one of said photoconductive layer and said barrier layer is made of an amorphous material in which silicon atom is a matrix and halogen atom is a constituent atom, a depletion layer region is created at the interfacial region between the photoconductive layer and the barrier layer, said barrier layer containing an impurity which governs the conductive type of said barrier layer to inhibit injection of the carriers having the same polarity as that of the minor carriers in said barrier layer from the side of said substrate to said photoconductive layer, said photoconductive layer containing an impurity which governs the conductive type of said photoconductive layer or not containing such impurity, and theimpurity concentration to satisfy a relationship of (N-M)/N ranges from 0.5 to 1.0 wherein N is a quantity of the impurity contained in the barrier layer, and M is a quantity of the impurity contained in the pootoconductive layer.
Claim 24
Dependent Claim
18 words
A photoconductive member according to claim 20, in which a barrier layer has semiconductive characteristics of p+ type.
Claim 25
Dependent Claim
25 words
A photoconductive member according to claim 21, in which a barrier layer contains an atom in Group III of the Periodic Table as an impurity.
Claim 26
Dependent Claim
24 words
A photoconductive member according to claim 22, in which an impurity atom contained in a barrier layer ranges from 50 ppm to 1000 ppm.
Claim 27
Dependent Claim
18 words
A photoconductive member according to claim 20, in which a barrier layer has semiconductive characteristics of n+ type.
Claim 28
Dependent Claim
25 words
A photoconductive member according to claim 24, in which a barrier layer contains an atom in Group V of the Periodic Table as an impurity.
Claim 29
Dependent Claim
24 words
A photoconductive member according to claim 26, in which an impurity atom contained in a barrier layer ranges from 50 ppm to 1000 ppm.
Claim 30
Dependent Claim
18 words
A photoconductive member according to claim 20, in which a barrier layer has a thickness of 0.02-0.5 microns.
Claim 31
Dependent Claim
32 words
A photoconductive member according to claim 20, in which a barrier layer is constructed with an amorphous material in which silicon atom is a matrix and hydrogen atom is a constituent atom.
Claim 32
Dependent Claim
20 words
A photoconductive member according to claim 28, in which hydrogen atom is contained in an amount of 1-40 atomic percent.
Claim 33
Dependent Claim
32 words
A photoconductive member according to claim 20, in which a barrier layer is constructed with an amorphous material in which silicon atom is a matrix and halogen atom is a constituent atom.
Claim 34
Dependent Claim
21 words
A photoconductive member according to claim 30, in which the halogen atom is contained in an amount of 1-40 atomic percent.
Claim 35
Dependent Claim
32 words
A photoconductive member according to claim 20, in which a barrier layer is constructed with an amorphous material in which silicon is a matrix, and halogen and hydrogen atoms are constitutent atoms.
Claim 36
Dependent Claim
35 words
A photoconductive member according to claim 32, in which halogen and hydrogen atoms are contrained in a total amount of 1-40 atomic percent and the hydrogen content is not more than twice the halogen content.
Claim 37
Dependent Claim
28 words
A photoconductive member according to claim 20, in which a photoconductive layer has at least one semiconductive characteristic selected from the group consisting of n-type, i-type and p-type.
Claim 38
Dependent Claim
32 words
A photoconductive member according to claim 34, in which a photoconductive layer contains an atom in Group III of the Periodic Table in an amount not reaching 50 ppm as an impurity.
Claim 39
Dependent Claim
18 words
A photoconductive member according to claim 20, in which a photoconductive layer has a thickness of 1-70 microns.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-15 | 1986-05-17 | 1986-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-15 | 1990-05-17 | 1990-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-15 | 1994-05-17 | 1994-11-16 | $7700.00 | Window Closed / Lapsed |