Light emitting device for optical switching

Claim 2

A semiconductor light emitting device comprising: a first region comprising a mixed crystal III-V semiconductor having a first conductivity type and a graded bandgap; and a second region comprising a mixed crystal III-V semiconductor having an opposite conductivity type adjacent to said first region thereby forming a heterojunction between the two regions with the bandgap of the first region continuously decreasing in a direction away from the junction and the second region having a significantly wider bandgap and a lower dopant impurity concentration at the junction than the first region.

Claim 3

The device according to claim 1 wherein the mixed-crystal III-V semiconductor comprises GaAlAs.

Claim 4

The device according to claim 2 wherein the aluminum concentration of the first region lies within the range 0.08-0.12 at the junction, and the aluminum concentration of the second region lies within the range 0.25-0.35 at the junction and is at least 0.15 greater than that of the first region.

Claim 5

The device according to claim 3 wherein the dopant impurity concentration of the first region is within the range 5×10 18 -1×10 19 cm -3 at the junction, and the dopant impurity concentration of the second region is within the range 1×10 16 -1×10 17 cm -3 at the junction.

Claim 6

The device according to claim 1 wherein the external quantum efficiency is at least 2 percent and the rise and fall times are each less than 40 nanoseconds at 10 milliamps of forward current applied to the device.

Claim 7

The device according to claim 1 wherein the external quantum efficiency decreases as the forward current applied to the device increases from zero to at least 10 milliamps.

Claim 8

In an opto-isolator, a light emitting device having an external quantum efficiency of at least 2.0 percent and rise and fall times each of less than 40 nanoseconds at 10 milliamps of forward current applied to the device with no pre-bias, the device consisting essentially of: a first layer comprising Ga 1-y Al y As of p-conductivity type having a graded bandgap and having a dopant impurity concentration within the range 5×10 18 -1×10 19 cm -3 at the junction formed with a second layer; a second layer comprising Ga 1-x Al x As of n-conductivity type adjacent to said first layer thereby forming a single heterojunction between the two layers with a dopant impurity concentration in the second layer at the junction in the range 1×10 16 -1×10 17 cm -3 and the bandgap of the first layer continuously decreasing in a direction away from the junction, where 0.08≦y≦0.12 and 0.25≦x≦0.35 at said junction; and ohmic contacts formed at the surfaces of the two layers opposite from the heterojunction.

Claim 9

In an opto-isolator, a light emitting device having an external quantum efficiency of at least 2.0 percent and rise and fall times each of less than 40 nanoseconds at 10 milliamps of forward current applied to the device with no pre-bias, the device consisting essentially of: a first layer comprising Ga 1-y Al y As of p-conductivity type having a graded bandgap and having a dopant impurity concentration within the range 5×10 18 -1×10 19 cm -3 at the junction formed with a second layer; a second layer comprising Ga 1-x Al x As of n-conductivity type adjacent to said first layer thereby forming a single heterojunction between the two layers with a dopant impurity concentration in the second layer at the junction in the range 1×10 16 -1×10 17 cm -3 and the bandgap of the first layer continuously decreasing in a direction away from the junction, where 0.08≦y≦0.12 and 0.25≦x≦0.35 at said junction; and ohmic contacts formed at the surfaces of the two layers opposite from the heterojunction.