US4122486A
Expired / Lapsed
US
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Semiconductor light-emitting element
Assignee: Hitachi Ltd
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Filing: 1977-02-24
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Granted: 1978-10-24
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Expires: 1997-02-24
Abstract
Abstract A light emitting element made of a group III - V compound semiconductor has a p-n junction and a hetero-junction which are identical; the mixing ratio (band gap) of a p-type layer on the light emitting side is sufficiently smaller than that of an n-type layer on the opposite side. The semiconductor light-emitting element is especially useful as a light source, for optical communications, photoexcitation, etc.
Inventors
- 👤 Yuichi Ono
- 👤 Makoto Morioka
- 👤 Kazuhiro Ito
- 👤 Mitsuhiro Mori
- 👤 Masahiko Kawata
- 👤 Kazuhiro Kurata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:32
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
119 words
In a semiconductor light emitting device having a heterojunction and a p-n junction, wherein light is emitted from one side of said p-n junction, said p-n junction exhibiting characteristics of a hetero-junction, the improvement comprising a first semiconductor layer of p-type conductivity and a second semiconductor layer of n-type conductivity defining a p-n junction from which said light is emitted, said first semiconductor layer having a band gap smaller than that of said second semiconductor layer, wherein said first semiconductor layer has a band gap Ep, said second semiconductor layer has a band gap En, and wherein (En-Ep) - (twice the energy step of the conduction band) ≧ 3kT, where k is Boltzmann's constant and T is absolute temperature.
Claim 2
Dependent Claim
119 words
In a semiconductor light emitting device having a heterojunction and a p-n junction, wherein light is emitted from one side of said p-n junction, said p-n junction exhibiting characteristics of a hetero-junction, the improvement comprising a first semiconductor layer of p-type conductivity and a second semiconductor layer of n-type conductivity defining a p-n junction from which said light is emitted, said first semiconductor layer having a band gap smaller than that of said second semiconductor layer, wherein said first semiconductor layer has a band gap Ep, said second semiconductor layer has a band gap En, and wherein (En-Ep) - (twice the energy step of the conduction band) ≧ 3kT, where k is Boltzmann's constant and T is absolute temperature.
Claim 3
Dependent Claim
23 words
The improvement according to claim 1, wherein each of said first and second semiconductor layers is made from a group III-V semiconductor compound.
Claim 4
Dependent Claim
24 words
The improvement according to claim 2, wherein one of said first semiconductor layer is p-type GaAs and said second semiconductor layer is n-type gallium-aluminum-arsenide.
Claim 5
Dependent Claim
30 words
The improvement according to claim 2, wherein said second semiconductor layer is n-type Ga 1-x Al x As, where x < 0.35 and said first semiconductor layer is p-type gallium-aluminum-arsenide.
Claim 6
Dependent Claim
30 words
The improvement according to claim 1, wherein said device has a light emitting surface provided so that said hetero-junction lies between said light emitting surface and said first semiconductor layer.
Claim 7
Dependent Claim
130 words
A light-emitting semiconductor device having a light emitting surface comprising: a first semiconductor layer of a first p + -conductivity type having a first surface of which forms said light emitting surface: a second semiconductor layer of said p-conductivity type forming a hetero-junction with said first semiconductor layer; a third semiconductor layer of a n-conductivity type forming a p-n junction with said second semiconductor layer, said p-n junction having characteristics of a hetero-junction; and first and second electrodes ohmically coupled to said first and third semiconductor layers, respectively, wherein said second semiconductor layer has an energy gap Ep and said third semiconductor layer has an energy gap En, and wherein (En-Ep)-(twice the energy step of the conduction band) ≧ 3kT, where k is Boltzmann's constant and T is absolute temperature.
Claim 8
Dependent Claim
130 words
A light-emitting semiconductor device having a light emitting surface comprising: a first semiconductor layer of a first p + -conductivity type having a first surface of which forms said light emitting surface: a second semiconductor layer of said p-conductivity type forming a hetero-junction with said first semiconductor layer; a third semiconductor layer of a n-conductivity type forming a p-n junction with said second semiconductor layer, said p-n junction having characteristics of a hetero-junction; and first and second electrodes ohmically coupled to said first and third semiconductor layers, respectively, wherein said second semiconductor layer has an energy gap Ep and said third semiconductor layer has an energy gap En, and wherein (En-Ep)-(twice the energy step of the conduction band) ≧ 3kT, where k is Boltzmann's constant and T is absolute temperature.
Claim 9
Dependent Claim
32 words
The improvement according to claim 6, further comprising a fourth semiconductor layer of n + conductivity type disposed between and providing ohmic coupling between said third semiconductor layer and said second electrode.
Claim 10
Dependent Claim
55 words
The improvement according to claim 7, further comprising a layer of insulating material extending through respective apertures provided through said third and fourth semiconductor layers and into a groove partially extending into said second semiconductor layer, the cross-section of said apertures and groove for limiting the extent of the light generating region of said device.
Claim 11
Dependent Claim
12 words
The improvement according to claim 8, wherein said device is hemispherically shaped.
Claim 12
Dependent Claim
32 words
The improvement according to claim 6, wherein said second semiconductor layer is a p-type ternary compound group III-V semiconductor and said third semiconductor layer is an n-type ternary compound group III-V semiconductor.
References Cited (Backward Citations)
US4017881A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1981-10-23 | 1982-04-24 | 1982-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-23 | 1986-04-24 | 1986-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-23 | 1990-04-24 | 1990-10-24 | $7700.00 | Window Closed / Lapsed |