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US4473437A Expired / Lapsed US ⏱️ 0.0 years remaining

Dry etching method for organic material layers

Assignee: Toshiba Corp
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Filing: 1983-11-16
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Granted: 1984-09-25
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Expires: 2003-11-16
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Abstract

Abstract A dry etching method for organic material layers is disclosed which utilizes a parallel plate electrode type plasma etching apparatus. An etching gas containing nitrogen as its primary constituent is introduced into the apparatus, and then the organic material layers are anisotropically etched by applying a high frequency electric power to the electrodes to produce a plasma.

Inventors

  • 👤 Iwao Higashikawa
  • 👤 Tsunetoshi Arikado

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 19:51
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 113 words
In a parallel plate electrode type dry etching apparatus for etching a workpiece, said apparatus including an etching chamber containing an anode and a cathode facing said anode, a dry etching method for etching an organic material layer of said workpiece comprising the steps of: mounting said workpiece on said cathode facing said anode in said etching chamber, said workpiece having an etching mask layer formed on an organic material layer; introducing a gas containing nitrogen as its primary constituent into said etching chamber; and applying a high frequency electric power between said anode and said cathode while introducing said gas to produce a plasma to thereby selectively etch the organic material layer.
Claim 2
Dependent Claim 113 words
In a parallel plate electrode type dry etching apparatus for etching a workpiece, said apparatus including an etching chamber containing an anode and a cathode facing said anode, a dry etching method for etching an organic material layer of said workpiece comprising the steps of: mounting said workpiece on said cathode facing said anode in said etching chamber, said workpiece having an etching mask layer formed on an organic material layer; introducing a gas containing nitrogen as its primary constituent into said etching chamber; and applying a high frequency electric power between said anode and said cathode while introducing said gas to produce a plasma to thereby selectively etch the organic material layer.
Claim 3
Dependent Claim 47 words
A dry etching method for etching an organic material layer according to claim 1 wherein the high frequency electric power and the gas pressure in said etching chamber are set to keep the cathode drop voltage between said anode and said cathode at or below 1000 volts.
Claim 4
Dependent Claim 33 words
A dry etching method for etching an organic material layer according to claim 1 wherein the gas containing nitrogen contains nitrogen and an additive at or below 30 mol % of the total.
Claim 5
Dependent Claim 37 words
A dry etching method for etching an organic material layer according to claim 1 wherein said gas contains at least one selected from the group of N 2 , N 2 O, NO and NO 2 .
Claim 6
Dependent Claim 39 words
A dry etching method for etching an organic material layer according to claim 1 wherein said gas further contains at least one additive selected from the group of H 2 , SO 2 , CO and CO 2 .
Claim 7
Dependent Claim 42 words
A dry etching method for etching an organic material layer according to claim 1 wherein said gas consists of a mixture of N 2 and O 2 , the amount of O 2 being equal to or less than 30 mol %.

References Cited (Backward Citations)

US4374699A Cited
US4381967A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-09-25 1988-03-26 1988-09-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-09-25 1992-03-26 1992-09-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-09-25 1996-03-26 1996-09-25 $7700.00 Window Closed / Lapsed

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