US4374699A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1981-07-09
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Granted: 1983-02-22
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Expires: 2001-07-09
Abstract
Abstract A method of manufacturing a semiconductor device in which an organic lacquer layer which is locally present on a substrate is etched by bringing the layer into contact with constituents of plasma which is formed in a gas mixture which contains a halogen compound and an oxygen compound. If the mixture contains more than 25% by volume of an oxygen compound from the group CO 2 and NO, the organic lacquer layer can be etched away from 500 to 1000 times faster than poly Si.
Inventors
- 👤 Jozef A. M. Sanders
- 👤 Franciscus H. M. Sanders
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:22
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
60 words
In a method of manufacturing a semiconductor device having an organic lacquer layer locally present on a substrate comprising plasma etching said layer with a gas mixture containing a halogen compound and an oxygen compound representing more than 25% by volume of said gas mixture, the improvement comprising forming said oxygen compound from the group NO and CO 2 .
Claim 2
Dependent Claim
60 words
In a method of manufacturing a semiconductor device having an organic lacquer layer locally present on a substrate comprising plasma etching said layer with a gas mixture containing a halogen compound and an oxygen compound representing more than 25% by volume of said gas mixture, the improvement comprising forming said oxygen compound from the group NO and CO 2 .
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said halogen compound contains CF 4 .
Claim 4
Dependent Claim
21 words
A method according to claim 2, wherein said oxygen compound contains from 65 to 85% by volume of CO 2 .
Claim 5
Dependent Claim
19 words
A method according to claim 2, wherein said oxygen compound contains from 55 to 75% by volume of NO.
References Cited (Backward Citations)
US3867216A
Cited
US4260649A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-21 | 1986-08-23 | 1987-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-21 | 1990-08-23 | 1991-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-21 | 1994-08-23 | 1995-02-22 | $7700.00 | Window Closed / Lapsed |