US4381967A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1981-07-09
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Granted: 1983-05-03
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Expires: 2001-07-09
Abstract
Abstract A method of manufacturing a semiconductor device where a layer which is present on a substrate and which is locally covered with an organic lacquer layer is etched by bringing the layer into contact with constituents of a plasma which is formed in a gas mixture containing a halogen compound and an oxygen compound. The rate at which the organic lacquer layer is removed by the constituents of the plasma is substantially reduced by the addition of from 1 to 15% by vol. of CO to this gas mixture.
Inventors
- 👤 Franciscus H. M. Sanders
- 👤 Jozef A. M. Sanders
- 👤 Jan Dieleman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:03
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
61 words
In a method of manufacturing a semiconductor device comprising the steps of forming a layer on a substrate, locally covering said layer with an organic lacquer layer, and plasma etching said layer, the improvement comprising forming a plasma of a gas mixture having a composition of an oxygen compound, a halogen compound, and from 1 to 15% by volume of CO.
Claim 2
Dependent Claim
61 words
In a method of manufacturing a semiconductor device comprising the steps of forming a layer on a substrate, locally covering said layer with an organic lacquer layer, and plasma etching said layer, the improvement comprising forming a plasma of a gas mixture having a composition of an oxygen compound, a halogen compound, and from 1 to 15% by volume of CO.
Claim 3
Dependent Claim
34 words
A method according to claim 1, wherein said gas mixture contains CF 4 as said halogen compound, and a compound from the group O 2 , CO 2 and NO as said oxygen compound.
Claim 4
Dependent Claim
34 words
A method according to claim 1, wherein said gas mixture contains SF 6 as said halogen compound, and a compound from the group O 2 , CO 2 and NO as said oxygen compound.
Claim 5
Independent Claim
18 words
A method according to one of claims 1, 2 or 3, wherein said layer is a conductive material.
Claim 6
Dependent Claim
16 words
A method according to claim 4, wherein said conductive material is one of polysilicon or metal.
Claim 7
Dependent Claim
21 words
A method according to claim 1, wherein the rate of etching said organic lacquer layer is reduced by factor of ten.
Claim 8
Independent Claim
40 words
A method according to one of claims 1 or 6, wherein said layer is a conductive material, and wherein said organic lacquer layer is comparatively thin such that a comparatively fine pattern of conductive tracks of said layer is formed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-02 | 1986-11-01 | 1987-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-02 | 1990-11-01 | 1991-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-02 | 1994-11-01 | 1995-05-03 | $7700.00 | Window Closed / Lapsed |