Patent US4472210A successfully refreshed from Google Patents.
US4472210A
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Method of making a semiconductor device to improve conductivity of amorphous silicon films
Assignee: Intersil Corp
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Filing: 1983-01-07
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Granted: 1984-09-18
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Expires: 2003-01-07
Abstract
Abstract In making a semiconductor device wherein a film of a non-single crystalline silicon, such as polycrystalline or amorphous silicon, is deposited on a substrate and then doped, particularly by ion implantation, to make the film conductive, the conductivity of the film is increased by pre-annealing the film at a temperature of 1000 DEG C. to 1200 DEG C. in an inert ambient before doping the film.
Inventors
- 👤 Chung P. Wu
- 👤 George L. Schnable
- 👤 Roger E. Stricker
- 👤 Bansang W. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/416; H10P32/00; H10P32/30; H10P32/302
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
51 words
A method of forming a conductive film of polycrystalline silicon comprising the steps of depositing a film of amorphous silicon, annealing said amorphous silicon film at a temperature of at least 1000° C. in an inert ambient, and doping said annealed film with a conductivity modifier to make the film conductive.
Claim 2
Independent Claim
51 words
A method of forming a conductive film of polycrystalline silicon comprising the steps of depositing a film of amorphous silicon, annealing said amorphous silicon film at a temperature of at least 1000° C. in an inert ambient, and doping said annealed film with a conductivity modifier to make the film conductive.
Claim 3
Dependent Claim
26 words
A method in accordance with claim 1 wherein the film is annealed at a temperature of between 1000° C. and 1200° C. before doping the film.
Claim 4
Dependent Claim
20 words
A method in accordance with claim 1 wherein after the film is annealed, the film is doped by ion implantion.
Claim 5
Dependent Claim
25 words
A method in accordance with claim 3 wherein the ions implanted in the film are selected from the group consisting of boron, arsenic and phosphorus.
Claim 6
Dependent Claim
32 words
A method in accordance with claim 3 in which after the ions are implanted in the film the doped film is annealed at a temperature of between 600° C. and 1100° C.
Claim 7
Dependent Claim
24 words
A method in accordance with claim 5 in which the undoped film is annealed at a temperature of between 1000° C. and 1200° C.
Claim 8
Independent Claim
50 words
A method of making a semiconductor device which includes the steps of depositing a film of a amorphous silicon on a substrate, annealing said film at a temperature of at least 1000° C. in an inert ambient, and doping said film with a conductivity modifier to make the film conductive.
Claim 9
Independent Claim
50 words
A method of making a semiconductor device which includes the steps of depositing a film of a amorphous silicon on a substrate, annealing said film at a temperature of at least 1000° C. in an inert ambient, and doping said film with a conductivity modifier to make the film conductive.
Claim 10
Dependent Claim
23 words
A method in accordance with claim 7 in which said film is doped by implanting ions of the conductivity modifier into the film.
Claim 11
Dependent Claim
24 words
A method in accordance with claim 7 in which the undoped film is annealed at a temperature of between 1000° C. and 1200° C.
Claim 12
Dependent Claim
24 words
A method in accordance with claim 8 in which the doped film is annealed at a temperature of between 600° C. and 1100° C.
References Cited (Backward Citations)
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US4214918A
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US4198246A
Cited
US4229502A
Cited
US4411708A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-18 | 1988-03-19 | 1988-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-18 | 1992-03-19 | 1992-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-18 | 1996-03-19 | 1996-09-18 | $7700.00 | Window Closed / Lapsed |