Patent US4425426B1 successfully refreshed from Google Patents.
US4454222A
Expired / Lapsed
US
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Process for forming resist patterns using mixed ketone developers
Assignee: Toshiba Corp
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Filing: 1982-04-13
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Granted: 1984-06-12
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Expires: 2002-04-13
Abstract
Abstract Disclosed is a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of a monomer represented by the formula: ##STR1## and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer, which is characterized in that said developer is composed of one or more of ketones selected from the group consisting of 2-butanone, 2-methyl-3-butanone, 2-pentanone, 3-pentanone and 4-methyl-2-pentanone; or mixture thereof with other ketone and/or alcohol, except for a single use of 2-butanone and a combination of 4-methyl-2-pentanone and alcohol.
Inventors
- 👤 Tsukasa Tada
- 👤 Akira Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:23
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; G03F7/26; G03F7/30; G03F7/32; G03F7/325
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
96 words
In a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of a monomer represented by the formula: ##STR3## and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer not containing alcohol; the improvement wherein said alcohol-less developer is composed of one or more of ketones selected from the group consisting of 2-butanone, 2-methyl-3-butanone, 2-pentanone, 3-pentanone and 4-methyl-2-pentanone; or a mixture thereof with another ketone, except for a single use of 2-butanone.
Claim 2
Dependent Claim
96 words
In a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of a monomer represented by the formula: ##STR3## and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer not containing alcohol; the improvement wherein said alcohol-less developer is composed of one or more of ketones selected from the group consisting of 2-butanone, 2-methyl-3-butanone, 2-pentanone, 3-pentanone and 4-methyl-2-pentanone; or a mixture thereof with another ketone, except for a single use of 2-butanone.
Claim 3
Dependent Claim
28 words
The process according to claim 1, wherein said other ketone is selected from the group consisting of 2-heptanone, 3-heptanone, 2-hexanone, 3-hexanone, 2-methyl-5-hexanone, 3-methyl-5-hexanone, 4-methyl-5-hexanone, 3-methyl-2-butanone, 2-methyl-3-pentanone and 3-methyl-2-pentanone.
Claim 4
Dependent Claim
28 words
The process according to claim 1, wherein the content of 2-butanone, 2-methyl-3-butanone, 2-pentanone, 3-pentanone or 4-methyl-2-pentanone in the developer ranges from 20 to less than 100% by weight.
Claim 5
Dependent Claim
24 words
The process according to claim 3, wherein said 2-butanone is contained in the developer in an amount of from 5 to 40% by weight.
Claim 6
Dependent Claim
24 words
The process according to claim 3, wherein said 2-methyl-3-butanone is contained in the developer in an amount of from 20 to 70% by weight.
Claim 7
Dependent Claim
28 words
The process according to claim 3, wherein said 2-pentanone or 3-pentanone is contained in the developer in an amount of from 20 to less than 100% by weight.
Claim 8
Dependent Claim
26 words
The process according to claim 3, wherein said 4-methyl-2-pentanone is contained in the developer in an amount of from 40 to less than 100% by weight.
Claim 9
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 2-butanone/2-methyl-3-butanone mixture.
Claim 10
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 3-pentanone/2-methyl-5-hexanone mixture.
Claim 11
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 4-methyl-2-pentanone/2-butanone mixture.
Claim 12
Dependent Claim
13 words
The process according to claim 1, wherein said developer consists essentially of 4-methyl-2-pentanone.
Claim 13
Dependent Claim
15 words
The process according to claim 1 wherein said developer consists essentially of a 2-pentanone/2-heptanone mixture.
Claim 14
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 2-pentanone/2-methyl-5-hexanone mixture.
Claim 15
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 2-pentanone/3-methyl-5-hexanone mixture.
Claim 16
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 2-pentanone/4-methyl-5-hexanone mixture.
Claim 17
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 3-pentanone/3-heptanone mixture.
Claim 18
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 3-pentanone/3-methyl-5-hexanone mixture.
Claim 19
Dependent Claim
15 words
The process according to claim 1, wherein said developer consists essentially of a 3-pentanone/4-methyl-5-hexanone mixture.
Claim 20
Dependent Claim
75 words
In a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of monomer represented by the formula: ##STR4## and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer, the improvement wherein said developer is composed of a 2-butanone/2-methyl-3-butanone/2-propanol mixture containing 2-propanol in an amount of from 1 to 4% by weight.
Claim 21
Dependent Claim
75 words
In a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of monomer represented by the formula: ##STR4## and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer, the improvement wherein said developer is composed of a 2-butanone/2-methyl-3-butanone/2-propanol mixture containing 2-propanol in an amount of from 1 to 4% by weight.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-12 | 1987-12-12 | 1988-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-12 | 1991-12-12 | 1992-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-12 | 1995-12-12 | 1996-06-12 | $7700.00 | Window Closed / Lapsed |